Semiconductor chip for optoelectronics

• US 20020017652A1
• Filed: 12/27/2000
• Published: 02/14/2002
• Est. Priority Date: 08/08/2000
• Status: Abandoned Application

• Current Assignee: OSRAM GmbH (Ams-Osram AG)
• Original Assignee: OSRAM GmbH (Ams-Osram AG)
• Inventors: Wirth, Ralph, Streubel, Klaus, Ploessl, Andreas, Wegleiter, Walter, Illek, Stefan
• Application Number:
  US09/750,004
• Publication Number:
  US 20020017652A1
• Time in Patent Office: Days
• US Class Current: 257/95
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

Claims

1. An optoelectronic semiconductor chip comprising:

an active layer containing a photon-emitting zone, said active layer having a bonding side;

a carrier member to which said active layer is attached at said bonding side; and

said active layer having a recess having a cross-sectional area which decreases with increasing depth of said recess into said active layer proceeding from said bonding side.

2. An optoelectronic semiconductor chip as claimed in claim 1 wherein said recess is disposed in said active layer so that said recess interrupts said photonemitting zone.

3. An optoelectronic semiconductor chip as claimed in claim 1 wherein said active layer has a plurality of recesses each corresponding to said recess, and wherein said active layer has a connecting layer disposed at said bonding side, said connecting layer having a plurality of elevations formed by said plurality of recesses.

4. An optoelectronic semiconductor chip as claimed in claim 3 wherein said photon-emitting zone and said elevations are disposed relative to each other so that at least one trajectory of photons emitted by said photon-emitting zone proceeds from one of said elevations to a neighboring one of said elevations.

5. An optoelectronic semiconductor chip as claimed in claim 3 wherein said elevations are tapered toward said carrier member.

6. An optoelectronic semiconductor chip as claimed in claim 5 wherein said elevations each have concave lateral faces.

7. An optoelectronic semiconductor chip as claimed in claim 3 wherein said elevations each have a truncated pyramidal shape.

8. An optoelectronic semiconductor chip as claimed in claim 3 wherein said photon-emitting zone is disposed in a portion of said elevations neighboring said connecting layer.

9. An optoelectronic semiconductor chip as claimed in claim 3 wherein said connecting layer is transparent for photons emitted by said photon-emitting zone.

10. An optoelectronic semiconductor chip as claimed in claim 3 wherein said connecting layer is highly doped.

11. An optoelectronic semiconductor chip as claimed in claim 3 further comprising a reflective layer covering said elevations.

12. An optoelectronic semiconductor chip as claimed in claim 11 wherein said reflective layer comprises a metallization layer adjacent an insulating layer.

13. An optoelectronic semiconductor chip as claimed in claim 1 wherein said active layer has a thickness which is less than 50 μ

m.

14. An optoelectronic semiconductor chip as claimed in claim 1 wherein said active layer has a thickness of less than 30 μ

m.