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Semiconductor device with schottky electrode having high schottky barrier

  • US 20020017696A1
  • Filed: 06/28/2001
  • Published: 02/14/2002
  • Est. Priority Date: 06/29/2000
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first electron barrier layer;

    a second electron barrier layer that is formed on said first electron barrier layer either directly or on an interposed spacer layer and in which a negative piezoelectric charge is induced on said first electron barrier layer side and a positive piezoelectric charge is induced on the opposite side; and

    a Schottky electrode that is formed on the side of said second electron barrier layer in which said positive piezoelectric charge is induced.

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