Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment

• US 20020017710A1
• Filed: 07/11/2001
• Published: 02/14/2002
• Est. Priority Date: 08/04/2000
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Umetsu, Kazushige, Ito, Haruki, Kurashima, Yohei
• Granted Patent: US 6,608,371 B2
• Time in Patent Office: Days
• US Class Current: 257/686
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05576 being mutually engaged together, e.g. through inserts
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/0579 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/058 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13009 Bump connector integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/1308 being stacked
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/1329 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/133 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16145 : the bodies being stacked
• CPC Class Codes: H01L 2224/16146 : the bump connector connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16235 : the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/81136 : involving guiding structures, e.g. spacers or supporting members
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83851 : being an anisotropic conductive adhesive
• CPC Class Codes: H01L 2224/90 : Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 2225/06586 : Housing with external bump or bump-like connectors
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/90 : Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A method of manufacturing a semiconductor device includes: a first step of forming a first through hole that penetrates the location of the electrode in a semiconductor element having an electrode; a second step of providing an insulating material in a region including an inside of the first through hole 18, in such a manner that a second through hole is provided penetrating through the insulating material; and a third step of providing a conductive member within the second through hole that penetrates through at least the insulating material in the inside of the first through hole.

Claims

1. A method of manufacturing a semiconductor device, the method comprising:

a first step of forming a first through hole that penetrates the location of the electrode in a semiconductor element having an electrode;

a second step of providing an insulating material in a region including an inside of the first through hole, in such a manner that a second through hole is provided penetrating through the insulating material; and

a third step of providing a conductive member within the second through hole that penetrates through at least the insulating material in the inside of the first through hole.

2. The method of manufacturing a semiconductor device as defined by claim 1, further comprising steps of:

stacking a plurality of the semiconductor devices manufactured by the method defined by claim 1;

and

electrically connecting upper and lower semiconductor elements by the conductive member.

3. The method of manufacturing a semiconductor device as defined by claim 2,

wherein in the second step, the insulating material is formed to cover a surface of the semiconductor element which is opposite to a surface on which the electrode is formed.

4. The method of manufacturing a semiconductor device as defined by claim 3,

wherein the insulating material is formed of a resin,

wherein a plurality of the semiconductor elements are pasted together by using the resin as an adhesive, and

wherein the conductive member and the electrode are electrically connected by heating the resin to complete hardening contraction of the resin.

5. The method of manufacturing a semiconductor device as defined by claim 4,

wherein the resin is heated before a plurality of the semiconductor elements are pasted together, to activate the adhesive force of the resin.

6. The method of manufacturing a semiconductor device as defined by claim 1,

wherein the insulating material is formed of a resin, and

wherein the resin is applied in the second step.

7. The method of manufacturing a semiconductor device as defined by claim 1,

wherein in the second step, the first through hole is filled with the insulating material, and the second through hole having a diameter smaller than a diameter of the first through hole is formed inside the first through hole, in such a manner as to pass through the insulating material.

8. The method of manufacturing a semiconductor device as defined by claim 1,

wherein the conductive member is a conductive paste, and

wherein the second through hole is filled with the conductive paste in the second step.

9. The method of manufacturing a semiconductor device as defined by claim 1,

wherein the second through hole is formed with a taper that decreases in dimension towards the electrode of the semiconductor element.

10. The method of manufacturing a semiconductor device as defined by claim 1,

wherein the second through hole is formed with a taper that decreases in dimension away from the electrode of the semiconductor element.

11. The method of manufacturing a semiconductor device as defined by claim 1,

wherein at least one of the first through hole and the second through hole is formed by a laser beam.

12. The method of manufacturing a semiconductor device as defined by claim 11,

wherein the laser beam is irradiated from a surface opposite to a surface of the semiconductor element on which the electrode is formed.

14. The method of manufacturing a semiconductor device as defined by claim 13,

wherein in the second step, the insulating material is formed to cover a surface of the semiconductor element which is opposite to a surface on which the electrode is formed.

15. The method of manufacturing a semiconductor device as defined by claim 14,

wherein the insulating material is formed of a resin,

wherein a plurality of the semiconductor elements are pasted together by using the resin as an adhesive, and

wherein the conductive member and the electrode are electrically connecting by heating the resin to complete hardening contraction of the resin.

16. The method of manufacturing a semiconductor device as defined by claim 15,

wherein the resin is heated before a plurality of the semiconductor elements are pasted together, to activate the adhesive force of the resin.

17. The method of manufacturing a semiconductor device as defined by claim 13,

wherein the insulating material is formed of a resin, and

wherein the resin is applied in the second step.

18. The method of manufacturing a semiconductor device as defined by claim 13,

wherein in the second step, the first through hole is filled with the insulating material, and the second through hole having a diameter smaller than a diameter of the first through hole is formed inside the first through hole, in such a manner as to pass through the insulating material.

19. The method of manufacturing a semiconductor device as defined by claim 13,

wherein the conductive member is a conductive paste, and

wherein the second through hole is filled with the conductive paste in the second step.

20. The method of manufacturing a semiconductor device as defined by claim 13,

wherein the conductive member is a bump, and

wherein at least part of the bump engages with the second through hole in the semiconductor element during the third step.

21. The method of manufacturing a semiconductor device as defined by claim 20,

wherein a plurality of the bumps are provided in a stack.

22. The method of manufacturing a semiconductor device as defined by claim 20,

wherein after the third step, the bump is melted to fill the second through hole.

23. The method of manufacturing a semiconductor device as defined by claim 13,

wherein the second through hole is formed with a taper that decreases in dimension towards the electrode of the semiconductor element.

24. The method of manufacturing a semiconductor device as defined by claim 13,

wherein the second through hole is formed with a taper that decreases in dimension away from the electrode of the semiconductor element.

25. The method of manufacturing a semiconductor device as defined by claim 13,

wherein at least one of the first through hole or the second through hole is formed by a laser beam.

26. The method of manufacturing a semiconductor device as defined by claim 25,

wherein the laser beam is irradiated from a surface opposite to a surface of the semiconductor element on which the electrode is formed.

27. A semiconductor device manufactured by the method of manufacturing a semiconductor device as defined by claim 1.

28. A semiconductor device manufactured by the method of manufacturing a semiconductor device as defined by claim 14.

30. The semiconductor device as defined by claim 29,

wherein the through hole is filled with the conductive member.

31. The semiconductor device as defined by claim 29,

wherein the through hole is formed with a taper that decreases in dimension towards the electrode of the semiconductor element.

32. The semiconductor device as defined by claim 29,

wherein the through hole is formed with a taper that decreases in dimension away from the electrode of the semiconductor element.

33. The semiconductor device as defined by claim 29,

wherein the insulating material is provided so as to expose the conductive member and to cover a surface of the semiconductor element which is opposite to a surface on which the electrode is formed.

34. The semiconductor device as defined by claim 29,

wherein a part of the conductive member protrudes to an outside of the through hole, at a surface of the semiconductor element which is opposite to a surface on which the electrode is formed.

35. The semiconductor device as defined by claim 29,

wherein a stack of a plurality of the semiconductor devices are provided, and upper and lower semiconductor elements are connected electrically by the conductive member.

36. A circuit board on which is mounted the semiconductor device as defined by claim 29.

13. A method of manufacturing a semiconductor device, the method comprising:

a first step of forming a first through hole that penetrates the location of the electrode in first and second semiconductor elements each having an electrode;

a second step of providing an insulating material in a region including an inside of the first through hole, in such a manner that a second through hole is provided penetrating through the insulating material; and

a third step of electrically connecting the electrode of the semiconductor element and a conductive member, and fitting the conductive member into the second through hole in the second semiconductor device, and superposing the first and second semiconductor elements.

29. A semiconductor device comprising:

a semiconductor element having an electrode, a through hole being formed at a location of the electrode;

insulating material provided in a region including an inside of the through hole; and

a conductive member provided in such a manner as to pass along a central axis of the through hole.

37. Electronic equipment having the semiconductor device as defined by claim 29.