Optical element and method of manufacturing the same, and electronic instrument

• US 20020019069A1
• Filed: 07/10/2001
• Published: 02/14/2002
• Est. Priority Date: 07/11/2000
• Status: Active Grant

• Current Assignee: Advanced Interconnect Systems Limited (Vector Capital Corporation)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Wada, Kenji
• Granted Patent: US 6,703,689 B2
• Time in Patent Office: Days
• US Class Current: 438/69
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/15312 : being a pin array, e.g. PGA
• CPC Class Codes: H01L 2924/16195 : Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2933/0016 : relating to electrodes
• CPC Class Codes: H01L 31/0203 : Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/18 : Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 33/382 : the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: Y10S 257/911 : Light sensitive array adapted to be scanned by electron beam, e.g. vidicon device

Abstract

A method of manufacturing an optical element including the steps of: forming a through hole in a semiconductor element which has an optical section and an electrode electrically connected to the optical section; and forming a conductive layer extending from a first surface of the semiconductor element on which the optical section is formed, through an inner wall surface of the through hole, to a second surface opposite to the first surface.

Claims

1. A method of manufacturing an optical element comprising the steps of:

forming a through hole in a semiconductor element which has an optical section and an electrode electrically connected to the optical section; and

forming a conductive layer extending from a first surface of the semiconductor element on which the optical section is formed, through an inner wall surface of the through hole, to a second surface opposite to the first surface.

2. The method of manufacturing an optical element as defined in claim 1,

wherein an external electrode which is electrically connected to the conductive layer is formed on the second surface of the semiconductor element.

3. The method of manufacturing an optical element as defined in claim 1,

wherein after forming a stress relieving layer on the second surface of the semiconductor element, the conductive layer is formed over the stress relieving layer.

4. The method of manufacturing an optical element as defined in claim 2,

wherein after forming a stress relieving layer on the second surface of the semiconductor element, the conductive layer is formed over the stress relieving layer, and the external electrode is formed in a position on the second surface corresponding to the stress relieving layer.

5. The method of manufacturing an optical element as defined in claim 1,

wherein the semiconductor element is a semiconductor chip cut from a semiconductor wafer.

6. The method of manufacturing an optical element as defined in claim 1, wherein:

the semiconductor element is part of a semiconductor wafer; and

the semiconductor wafer is cut into individual chips, each of the individual chips being the semiconductor element.

7. The method of manufacturing an optical element as defined in claim 1,

wherein after forming the conductive layer, a light-transmitting member is provided on the first surface.

8. The method of manufacturing an optical element as defined in claim 5, wherein:

after forming the conductive layer, a light-transmitting member is provided on the first surface; and

the light-transmitting member is of substantially the same shape as the semiconductor chip.

9. The method of manufacturing an optical element as defined in claim 6, wherein:

after forming the conductive layer, a light-transmitting member is provided on the first surface; and

the light-transmitting member is of substantially the same shape as the semiconductor wafer.

10. The method of manufacturing an optical element as defined in claim 6, wherein:

after forming the conductive layer, a light-transmitting member is provided on the first surface;

the light-transmitting member is of substantially the same shape as the semiconductor element of the semiconductor wafer;

the electrical characteristics of the semiconductor element of the semiconductor wafer are tested to determine satisfactory portions; and

the light-transmitting member is provided on the semiconductor element determined to be satisfactory portions.

11. The method of manufacturing an optical element as defined in claim 10,

wherein the light-transmitting member is provided after the semiconductor wafer is cut.

12. The method of manufacturing an optical element as defined in claim 7,

wherein the light-transmitting member is an optical glass.

13. The method of manufacturing an optical element as defined in claim 1,

wherein a color filter is provided on the first surface.

14. The method of manufacturing an optical element as defined in claim 1,

wherein after forming the conductive layer, microlenses are provided on the first surface.

16. The optical element as defined in claim 15, further comprising:

an external electrode formed on the second surface of the semiconductor chip, and electrically connected to the conductive layer.

17. The optical element as defined in claim 15, further comprising a stress relieving layer formed on the second surface of the semiconductor chip,

wherein the conductive layer is formed over the stress relieving layer.

18. The optical element as defined in claim 16, further comprising a stress relieving layer formed on the second surface of the semiconductor chip,

wherein the conductive layer is formed over the stress relieving layer;

and

wherein the external electrode is formed in a position on the second surface corresponding to the stress relieving layer.

19. The optical element as defined in claim 15, further comprising:

a light-transmitting member provided on the first surface of the semiconductor chip.

20. The optical element as defined in claim 19,

wherein the light-transmitting member is of substantially the same shape as the semiconductor chip.

21. The optical element as defined in claim 19,

wherein the light-transmitting member is an optical glass.

22. The optical element as defined in claim 15, further comprising a color filter provided on the first surface of the semiconductor chip.

23. The optical element as defined in claim 15, further comprising a microlens provided on the first surface of the semiconductor chip.

25. The electronic instrument as defined in claim 24, further comprising a display section which displays an image based on a signal from the optical element.

15. An optical element comprising a semiconductor chip which has an optical section and an electrode electrically connected to the optical section,

wherein the semiconductor chip includes a through hole, and a conductive layer extending from a first surface of the semiconductor ship on which the optical section is formed, through an inner wall surface of the through hole, to a second surface opposite to the first surface.

24. An electronic instrument comprising an optical element which includes a semiconductor chip having an optical section and an electrode electrically connected to the optical section,

wherein the semiconductor chip has a through hole, and a conductive layer formed from a first surface of the semiconductor chip on which the optical section is formed, through an inner wall surface of the through hole, to a second surface opposite to the first surface.