Silicon carbide and method of manufacturing the same
First Claim
1. A method of depositing a silicon carbide on a substrate from a vapor phase or a liquid phase, comprising the steps of:
- depositing a silicon layer on the substrate;
doping the silicon layer with an impurity composed of at least one element selected from a group consisting of N, B, Al, Ga, In, P, As, Sb, Se, Zn, O, Au, V, Er, Ge, and Fe, to form a doped silicon layer; and
carbonizing the doped silicon layer into a silicon carbide layer of the silicon carbide doped with the impurity.
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Abstract
In a method of manufacturing a silicon carbide substance, such as a film, a layer, a semiconductor, which is doped with an impurity, a carbonization process is executed after formation of a doped silicon substance which is obtained by carrying out a silicon deposition process and by a doping process of the impurity. Both the silicon deposition and the doping processes may be simultaneously or separately carried out prior to the carbonization process or may be continued during the carbonization process also. At any rate, the carbonization process is intermittently carried out. A unit process of composed of a combination of the silicon deposition process, the doping process, and the carbonization process may be repeated a plurality times, for example, 2000 times.
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Citations
19 Claims
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1. A method of depositing a silicon carbide on a substrate from a vapor phase or a liquid phase, comprising the steps of:
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depositing a silicon layer on the substrate;
doping the silicon layer with an impurity composed of at least one element selected from a group consisting of N, B, Al, Ga, In, P, As, Sb, Se, Zn, O, Au, V, Er, Ge, and Fe, to form a doped silicon layer; and
carbonizing the doped silicon layer into a silicon carbide layer of the silicon carbide doped with the impurity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 15, 16, 18, 19)
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14. A silicon carbide having a region which has an impurity concentration gradient between 1×
- 1022/cm4 and 4×
1024/cm4 in the thickness direction.
- 1022/cm4 and 4×
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17. A method of depositing a silicon carbide doped with an impurity, comprising the steps of:
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doping the impurity into a silicon to form a doped silicon; and
carbonizing, after the doping, the doped silicon into the silicon carbide.
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Specification