METHOD FOR FILLING RECESSED MICRO-STRUCTURES WITH METALLIZATION IN THE PRODUCTION OF A MICROELECTRONIC DEVICE
First Claim
1. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:
- depositing a copper layer into the micro-structures with a process generating copper grains that are sufficiently small so as to substantially fill the recessed microstructures;
subjecting the deposited copper to an annealing process at a temperature below about 100 degrees Celsius.
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Accused Products
Abstract
A method for filling recessed micro-structures at a surface of a semiconductor wafer with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties.
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Citations
31 Claims
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1. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:
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depositing a copper layer into the micro-structures with a process generating copper grains that are sufficiently small so as to substantially fill the recessed microstructures;
subjecting the deposited copper to an annealing process at a temperature below about 100 degrees Celsius. - View Dependent Claims (2, 3, 4, 5)
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6. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with metallization comprising the steps of:
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depositing a metal layer into the micro-structures with a process generating copper grains that are sufficiently small so as to substantially fill the recessed microstructures;
subjecting the deposited metal to an annealing process at a temperature below about 100 degrees Celsius. - View Dependent Claims (7, 8, 9, 10)
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11. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:
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providing a semiconductor workpiece with a feature that is to be connected with copper metallization;
applying at least one dielectric layer over a surface of the semiconductor workpiece including the feature;
providing recessed micro-structures in the at least one dielectric layer;
preparing a surface of the workpiece including the recessed micro-structures with a seed layer for subsequent electrochemical copper deposition;
electrochemically depositing a copper layer to the surface of the wafer to substantially fill the recessed micro-structures;
allowing the electrochemically deposited copper layer to self-anneal for a predetermined period of time at ambient room temperature;
removing copper metallization from the surface of the workpiece except from the recessed micro-structures, said removing step occurring after the predetermined period of time has elapsed. - View Dependent Claims (12, 13, 14, 15, 16, 17, 19, 20, 21, 22, 23, 25, 26, 27, 28, 29)
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18. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:
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providing a semiconductor workpiece with a feature that is to be connected with copper metallization;
applying at least one dielectric layer over a surface of the semiconductor workpiece including the feature;
providing recessed micro-structures in the at least one dielectric layer;
preparing a surface of the workpiece including the recessed micro-structures with a seed layer for subsequent electrochemical copper deposition;
electrochemically depositing a copper layer to the surface of the wafer to substantially fill the recessed micro-structures;
removing copper metallization from the surface of the workpiece except from the recessed micro-structures;
allowing the electrochemically deposited copper layer to self-anneal at ambient room temperature without subjecting the workpiece to a separate and distinct elevated temperature annealing process.
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24. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:
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providing a semiconductor workpiece with a feature that is to be connected with copper metallization;
applying at least one dielectric layer over a surface of the semiconductor workpiece including the feature;
providing recessed micro-structures in the at least one dielectric layer;
preparing a surface of the workpiece, including the recessed micro-structures, with a seed layer for subsequent electrochemical copper deposition;
electrochemically depositing a copper layer to the surface of the wafer to substantially fill the recessed micro-structures;
subjecting the electrochemically deposited copper layer to an annealing process at a temperature below about 100 degrees Celsius.
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30. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:
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providing a semiconductor workpiece with a feature that is to be connected with copper metallization;
applying at least one low-K dielectric layer over a surface of the semiconductor workpiece including the feature;
providing recessed micro-structures in the at least one low-K dielectric layer;
preparing a surface of the workpiece, including the recessed micro-structures, with a seed layer for subsequent electrochemical copper deposition;
electrochemically depositing a copper layer to the surface of the wafer to substantially fill the recessed micro-structures;
subjecting the electrochemically deposited copper layer to an annealing process at a temperature below which the low-K dielectric layer substantially degrades. - View Dependent Claims (31)
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Specification