Semiconductor device

• US 20020024140A1
• Filed: 04/02/2001
• Published: 02/28/2002
• Est. Priority Date: 03/31/2000
• Status: Active Grant

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Ohta, Hiroyuki, Yamada, Kentaro, Suzuki, Masayuki, Nakajima, Takashi, Nishihara, Shinji, Iwasaki, Tomio, Miura, Hideo, Sahara, Masashi
• Granted Patent: US 6,472,754 B2
• Time in Patent Office: Days
• US Class Current: 257/758
• CPC Class Codes: H01L 23/485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 23/53257 the principal metal being a refractory metal
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The object of the invention is to provide such a highly reliable semiconductor device as no defect such as the breakage of a tungsten conductor occurs. This object is achieved by the following means, i.e., a molybdenum film, a tungsten film and another molybdenum film are deposited in this order on an interlayer dielectric film formed on a silicon substrate.

Claims

1. A semiconductor device comprising:

a silicon substrate;

an interlayer dielectric film formed on said silicon substrate; and

a layered interconnector having a first electrically conductive film formed on a surface of said interlayer dielectric film which first conductive film contains molybdenum as the main element thereof, a second electrically conductive film formed on a surface of said first electrically conductive film which second conductive film contains tungsten as the main element thereof, and a third electrically conductive film formed on a surface of said second film which third conductive film contains molybdenum as the main element thereof.

2. A semiconductor device comprising:

a silicon substrate;

a first dielectric film formed on said silicon substrate;

a layered interconnector having a first electrically conductive film formed on a surface of said interlayer dielectric film which first conductive film contains molybdenum as the main element thereof, a second electrically conductive film formed on a surface of said first electrically conductive film which second conductive film contains tungsten as the main element thereof, and a third electrically conductive film formed on a surface of said second film which third conductive film contains molybdenum as the main element thereof;

a second dielectric film deposited on a surface of said layered interconnector ; and

a dielectric film for a capacitative element which dielectric film is deposited at a side of said second dielectric film which side is opposite to the layered interconnector.

3. A semiconductor device comprising:

a silicon substrate;

an interlayer dielectric film formed on said silicon substrate; and

a layered interconnector having a second electrically conductive film formed on a surface of said interlayer dielectric film which second conductive film contains tungsten as the main element thereof, a fourth electrically conductive film formed on a surface of said second electrically conductive film which fourth conductive film contains molybdenum as the main element thereof, and a fifth electrically conductive film formed on a surface of said fourth conductive film which third conductive film contains tungsten as the main element thereof.

4. A semiconductor device comprising:

a silicon substrate;

a first dielectric film formed on said silicon substrate;

a layered interconnector having a second electrically conductive film formed on said interlayer dielectric film which second conductive film contains tungsten as the main element thereof, a fourth electrically conductive film formed on said second electrically conductive film which second conductive film contains molybdenum as the main element thereof, and a fifth electrically conductive film formed on said fourth conductive film which fifth conductive film contains tungsten as the main element thereof;

a second dielectric film formed on a surface of said layered interconnector; and

a dielectric film for a capacitative element which dielectric film is formed at a side of said second dielectric film which side is opposite to the layered interconnector.

5. A semiconductor device comprising:

a silicon substrate;

a first dielectric film formed on said silicon substrate;

trenches each formed in a surface of said first dielectric film; and

a layered interconnector having a sixth electrically conductive film formed in a concave shape along an inner surface of each of said trenches which sixth conductive film contains molybdenum as the main element thereof, a second electrically conductive film formed on a concave surface of said sixth electrically conductive film which second conductive film contains tungsten as the main element thereof, and a seventh electrically conductive film formed on a surface of said second conductive film which seventh conductive film contains molybdenum as the main element thereof.

6. A semiconductor device comprising:

a silicon substrate;

a second dielectric film formed on said silicon substrate which dielectric film is provided with trenches each formed in a surface of said first dielectric film; and

a layered interconnector having a second electrically conductive film formed in an inside of each of said trenches which second conductive film contains tungsten as the main element thereof, a sixth electrically conductive film formed at an interface defined between said first dielectric film and said second conductive film which second conductive film contains molybdenum as the main element thereof, and a third electrically conductive film formed on a surface of said second conductive film.

7. A semiconductor device comprising:

a substrate made of silicon;

a first dielectric film deposited on said silicon substrate which first dielectric film has trenches formed in a surface of the dielectric film;

a layered interconnector made of a material containing tungsten, said layered interconnector being provided with a second electrically conductive thin film formed at the inside of each of said trenches which second conductive film contains tungsten as the main element thereof, a sixth electrically conductive thin film formed at an interface defined between said first dielectric film and said second conductive film which sixth conductive film contains molybdenum as the main element thereof, a seventh electrically conductive film formed on a surface of said second conductive film so that said seventh electrically conductive film is in contact with both of said second conductive film and said sixth conductive film;

a second dielectric film formed on a surface of said layered interconnector; and

a dielectric film for a capacitative element which dielectric film is deposited on a surface side of said second dielectric film.