Patterns of electrically conducting polymers and their application as electrodes or electrical contacts

• US 20020025391A1
• Filed: 10/19/2001
• Published: 02/28/2002
• Est. Priority Date: 05/26/1989
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Bruce Kenneth Furman, Christos Dimitrios Dimitrakopoulos, Marie Angelopoulos, Shui-Chih Alan Lien, Teresita Ordonez Graham
• Inventors: Angelopoulos, Marie, Furman, Bruce Kenneth, Dimitrakopoulos, Christos Dimitrios, Lien, Shui-Chih Alan, Graham, Teresita Ordonez
• Granted Patent: US 7,095,474 B2
• Time in Patent Office: Days
• US Class Current: 428/1.4
• CPC Class Codes: C08G 61/12 Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
• CPC Class Codes: C09K 2323/00 Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
• CPC Class Codes: C09K 2323/04 Charge transferring layer characterised by chemical composition, i.e. conductive
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: H01B 1/125 comprising aliphatic main chains, e.g. polyactylenes
• CPC Class Codes: H01B 1/127 comprising five-membered aromatic rings in the main chain, e.g. polypyrroles, polythiophenes
• CPC Class Codes: H01B 1/128 comprising six-membered aromatic rings in the main chain, e.g. polyanilines, polyphenylenes
• CPC Class Codes: H01J 29/868 Screens covering the input or output face of the vessel, e.g. transparent anti-static coatings, X-ray absorbing layers
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 23/49894 Materials of the insulating layers or coatings
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 : Transparent materials
• CPC Class Codes: H10K 10/00 : Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers integrated devices or assemblies of multiple devices H10K19/00
• CPC Class Codes: H10K 10/46 : Field-effect transistors, e.g. organic thin-film transistors [OTFT] H10K10/43 takes precedence
• CPC Class Codes: H10K 10/462 : Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 10/466 : Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/82 : Electrodes
• CPC Class Codes: H10K 2102/3031 : Two-side emission, e.g. transparent OLEDs [TOLED]
• CPC Class Codes: H10K 50/805 : Electrodes
• CPC Class Codes: H10K 50/81 : Anodes
• CPC Class Codes: H10K 50/828 : Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 71/233 : by photolithographic etching
• CPC Class Codes: H10K 71/60 : Forming conductive regions or layers, e.g. electrodes
• CPC Class Codes: H10K 71/621 : Providing a shape to conductive layers, e.g. patterning or selective deposition
• CPC Class Codes: Y10T 428/12528 : Semiconductor component
• CPC Class Codes: Y10T 428/24331 : including nonapertured component
• CPC Class Codes: Y10T 428/31504 : Composite [nonstructural laminate]
• CPC Class Codes: Y10T 428/31533 : Of polythioether
• CPC Class Codes: Y10T 428/31678 : Of metal
• CPC Class Codes: Y10T 428/31692 : Next to addition polymer from unsaturated monomers

Abstract

Electronic devices having patterned electrically conductive polymers providing electrical connection thereto and methods of fabrication thereof are described. Liquid crystal display cells are described having at least one of the electrodes providing a bias across the liquid crystal material formed from a patterned electrically conductive polymer. Thin film transistors having patterned electrically conductive polymers as source drain and gate electrodes are described. Light emitting diodes having anode and coated regions formed from patterned electrically conductive polymers are described. Methods of patterning using a resist mask; patterning using a patterned metal layer; patterning the metal layer using a resist; and patterning the electrically conductive polymer directly to form electrodes and anode and cathode regions are described.

Claims

1. A structure comprising:

an electronic device having an electronically active portion having a surface;

said surface has a dielectric layer having an opening therein exposing said electronically active portion;

said opening having a perimeter;

a layer of electrically conductive polymer disposed on said dielectric layer;

said layer of electrically conductive polymer electrically contacts said electronically active portion through said opening and overlapping said perimeter to be disposed on said dielectric layer.

2. A structure according to claim 1 wherein said electronic device has a plural opening in said dielectric layer, exposing a plurality of electronically active regions, said electrically conductive polymer electrically contacts said plurality of electronically active regions;

said electrically conductive polymer has portions joining said contacts to said exposed plurality of electronically active regions.

3. A structure according to claim 1 wherein said layer of electrically conductive polymer is in a pattern.

4. A structure according to claim 1 wherein said electrically conductive material is selected from the group of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes combinations thereof and blends thereto with other polymers and copolymers of the monomers thereof.

10. A structure according to claim 1 wherein said electronic device is selected from the group consisting of a liquid crystal device, a transistor device and a light emitting device and a light absorbing device.

11. A structure according to claim 10 wherein said transistor is selected from the group consisting of a bipolar transistor and a field effect transistor.

12. A structure according to claim 10 wherein said light emitting device is a light emitting diode.

13. A structure according to claim 10 wherein said light absorbing device is a charge coupled device.

16. A structure according to claim 15 wherein said electrically conductive material is selected from the group of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes combinations thereof and blends thereto with other polymers and copolymers of the monomers thereof.

17. A structure according to claim 15 wherein said first substrate has a first electrically conductive polymer layer disposed thereon and said second substrate has a second electrically conductive polymer layer disposed thereon.

18. A structure of claim 15 wherein said electrically conductive polymer layer is a continuous film.

19. A structure according to claim 15 wherein said electrically conductive polymer is patterned.

20. A structure according to claim 17 wherein said first electrically conductive polymer layer is a continuous film and said second electrically conductive polymer layer is patterned.

21. A structure according to claim 15 wherein one of said first and said second substrates has said electrically conductive polymer disposed thereon, the other of said first and second substrates has an ITO layer thereon.

22. A structure according to claim 15 wherein said electrically conductive polymer contains a dopant.

23. A structure according to claim 15 wherein said structure is a transmmissive structure.

24. A structure according to claim 15 wherein said structure is a reflective structure.

25. A structure according to claim 15 further including at least one polarizing layer, at least one liquid crystal alignment layer in contact with said liquid crystal layer.

26. A structure according to claim 23 wherein both of said first substrate and said second substrate are transmissive to electromagnetic radiation.

27. A structure according to claim 15 wherein one of said substrates is transmissive to electromagnetic radiation and the other of said substrate is reflective of electromagnetic radiation.

28. A structure according to claim 15 wherein said first and said second substrates are formed from materials selected from the group consisting of glass, semiconductor and ceramic.

29. A structure according to claim 15 wherein said first substrate is glass and said second substrate is a semiconductor.

30. A structure according to claim 15 wherein said electrically conductive polymer is transparent.

31. A structure according to claim 27 wherein said reflective substrate further includes circuit patterns thereon.

32. A structure according to claim 31 wherein said circuit patterns includes a patterned electrically conductive polymer.

35. A liquid crystal display structure according to claim 12 wherein electrically conductive material is selected from the group of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes combinations thereof and blends thereto with other polymers and copolymers of the monomers thereof.

5. A structure comprising:

a surface;

a layer of electrically conductive polymer disposed on said surface in a pattern;

at least one portion of said layer of electrically conductive polymer is in electrical contact with said surface;

other portions of said layer of electrically conductive polymer are not in electrical contact with said surface.

6. A structure according to claim 5 further including a dielectric material disposed between said other portions and said surface.

7. A structure according to claim 5 wherein said surface is selected from the group consisting of an electrical conductor and a semiconductor.

8. A structure according to claim 7 wherein said semiconductor is formed from a material selected from the group consisting of an organic material and an inorganic material.

9. A structure according to claim 7 wherein said electrical conductor is formed from a material selected from the group consisting of a metal and a polymer

14. A structure comprising:

an electrically conductive surface having a peripheral edge;

a layer of electrically conductive polymer having a peripheral edge;

said peripheral edge of said electrically conductive surface has regions that are not aligned to said peripheral edge of said layer of electrically conductive polymer

15. A liquid crystal display structure comprising:

a first substrate;

a second substrate;

a liquid crystal layer disposed between said first substrate and said second substrate;

at least one of said first substrate and said second substrate has an electrical conductive polymer disposed thereon providing means for applying an electrical potential across said liquid crystal layer.

33. A liquid crystal display device comprising a patterned electrically conductive polymer.

37. A structure according to claim 36 where in electrically conductive material is selected from the group of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfur polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes combinations thereof and blends thereof with other polymers and copolymers of the monomers thereof.

39. A structure according to claim 38 wherein electrically conductive polymer is selected from the group consisting of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes combinations thereof and blends thereof with other polymers and copolymers of the monomers thereof.

40. A structure according to claim 38 wherein said semiconductor material is selected from the group consisting of an organic and an inorganic material.

34. A structure comprising:

a first substrate having first and second opposed surfaces having a first electrically conductive layer disposed on said first surface thereof;

a first alignment layer disposed on said electrically conductive layer;

a second substrate having a first and second opposed surfaces having a second electrically conductive polymer layer disposed on said first surface thereof, a alignment layer disposed on said second electrically conductive layer;

a first polarizer layer disposed on said second surface of said first substrate;

a second polarizer layer disposed on said second surface of said second substrate

said first substrate disposed adjacent said second substrate so that said first alignment layer faces said second aligned layer;

a seal spacer between said first and second substrates forming a cavity between seal spacer and said first substrate, said second substrate and said seal spacer;

said cavity is filled with a liquid crystal material;

at least one of said first and said second electrically conductive layer is an electrically conductive polymer layer.

36. A liquid crystal display structure comprising:

a semiconductor substrate having a first surface and a second surface;

a reflective layer on at least a portion of said first surface;

a transparent surface disposed in spaced apart relationship with respect to said semiconductor substrate;

a liquid crystal material disposed between said semiconductor and said transparent substrate;

an electrically conductive polymer layer disposed on at least one of said transparent substrate and said semiconductor substrate.

38. A structure comprising:

a substrate;

a patterned gate formed from a patterned electrically conductive material disposed on said substrate;

an insulating layer disposed on said pattern gate;

a patterned source electrode disposed on said insulating layer;

a patterned drain electrode disposed on said insulating layer;

at least one of said patterned source electrode said patterned drain electrode and said patterned gate being formed from an electrically conductive polymer;

a semiconducting material disposed between said patterned source and said patterned drain and on said insulating layer.

41. A structure comprising:

an electrically conductive substrate;

said substrate being a gate electrode;

an insulating layer disposed on said substrate;

a patterned source electrode disposed on said insulating layer;

a patterned drain electrode disposed on said insulating layer;

at least one of said source electrode and said drain electrode being formed from an electrically conductive polymer;

a semiconducting material disposed between said patterned source, said patterned drain and on said gate.

42. A structure according to claim 41 wherein electrically conductive polymer is selected from the group consisting of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes combinations thereof and blends thereof with other polymers and copolymers of the monomers thereof.

43. A structure according to claim 41 wherein said semiconductor material is selected from the group consisting of an organic and an inorganic material.

44. A structure according to claim 41 wherein said substrate is formed from a material selected from the group consisting of silicon, germanium and galium arsenide.

46. A structure according to claim 45 wherein electrically conductive polymer is selected from the group consisting of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetvlenes combinations thereof and blends thereof with other polymers and copolymers of the monomers thereof.

47. A structure according to claim 45 wherein said semiconductor material is selected from the group consisting of an organic and an inorganic material.

48. A structure according to claim 47 wherein said semiconductor layer is selected from the group consisting of Si, Ge, G, Ar and combinations thereof.

50. A structure according to claim 49 wherein electrically conductive polymer is selected from the group consisting of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes combinations thereof and blends thereof with other polymers and copolymers of the monomers thereof.

51. A structure according to claim 49 wherein said semiconductor material is selected from the group consisting of an organic and an inorganic material.

45. A structure comprising:

a substrate;

a patterned gate disposed on said substrate;

said gate being an electrically conductive material;

an insulating layer disposed on said patterned gate;

a semiconductor layer disposed on said insulating layer;

a patterned source disposed on said semiconductor layer;

a patterned drain disposed on said semiconductor layer,

at least one of said patterned gate, said patterned source and said patterned drain being an electrically conductive polymer.

49. A structure comprising:

an electrically conductive substrate

said substrate being a gate electrode;

an insulating layer disposed on said gate;

a semiconductor layer disposed on said insulating layer;

a patterned source disposed on said semiconductor layer;

a patterned drain disposed on said semiconductor layer;

at least one of said gate, said patterned source and said patterned drain being an electrically conductive polymer.

52. A structure comprising:

an insulating layer having a first side and a second side;

a gate disposed on said first side of said insulating layer;

a semiconducting layer disposed on said second side;

a patterned source electrode disposed in electrical contact with said semiconductor layer;

a patterned drain electrode disposed in contact with said semiconductor layer;

at least one of said patterned gate, said patterned source and said patterned drain being an electrically conductive polymer.

53. A structure according to claim 52 wherein electrically conductive polymer is selected from the group consisting of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes combinations thereof and blends thereof with other polymers and copolymers of the monomers thereof.

54. A structure according to claim 53 wherein said semiconductor material is selected from the group consisting of an organic and an inorganic material.

55. A structure comprising:

a semiconductor layer selected from the group consisting of an organic and inorganic semiconductor;

a patterned electrically conductive polymer layer disposed on said semiconductor layer;

said patterned electrically conductive layer forms an ohmic contact to said semiconductor layer.

56. A structure according to claim 55 wherein electrically conductive polymer is selected from the group consisting of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polvacetylenes combinations thereof and blends thereof with other polymers and copolymers of the monomers thereof.

58. A structure according to claim 58 wherein said electrically conductive polymer is selected from the group consisting of a hole injecting material and an electron injecting material.

59. A structure according to claim 58 wherein said electrically conductive polymer is patterned.

62. A structure according to claim 57 wherein said electroluminescent region is formed from a material selected from the group consisting of an organic material and in inorganic material.

63. A diode according to claim 57 electrically conductive polymer is selected from the group of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes combinations thereof and blends thereof with other polymers copolymers of the monomers thereof.

67. A diode according to claim 57 further including indium tin oxide.

68. A diode according to claim 57 wherein said anode is a transparent conductor.

69. A diode according to claim 57 wherein said conductor is indium tin oxide.

70. A diode according to claim 57 in which said electroluminescent region comprises single organic electroluminescent layer.

71. A diode according to claim 57 in which said electroluminescent region consist a stack of organic layers including at least one electroluminescent layer a electron transporting layer wherein said thin metal layer is in direct contact electron transporting layer.

72. A diode according to claim 57 further including a transparent substrate.

73. A diode according to claim 72 wherein said substrate is semi-transparent.

74. A diode according to claim 72 wherein said substrate is opaque.

75. A diode according to claim 74 wherein said material of said substrate is selected from the group consisting of glass, plastic, and silicon.

76. A structure according to claim 72 wherein said substrate is flexible.

77. An array comprising more than one claim 57 organic light emitting diode.

78. An array according to claim 77 further including a single crystal substrate comprising electronic circuits.

79. A array according to claim 78 wherein said circuits control the light emitted from said array.

57. A structure comprising:

an electroluminescent region;

an anode;

a cathode;

at least one of said anode and said cathode being an electrically conductive polymer.

60. A structure comprising:

an electroluminescent region;

a hole injecting region;

an electron injecting region;

an electrically conductive polymer providing electrical contact to at least one of said hole injecting region and said electron injecting region.

64. A diode according to claim 60 wherein said electroluminescent region is formed from a material selected from the group consisting of an organic material and in inorganic material.

61. An organic light-emitting diode comprising:

a substrate, an anode structure, an electroluminescent region, and a cathode structure, a patterned electrically conductive polymer electrically coupled to at least one of said anode region and said cathode region and covered by a protective layer of an abrasion and scratch resistant electrically conductive polymer.

65. A diode according to claim 61 wherein said electroluminescent region is formed from a material selected from the group consisting of an organic material and in inorganic material.

66. A light emitting diode comprising a patterned electrically conductive polymer.

80. A method comprising:

providing a substrate having a layer of an electrically conductive polymer material;

disposing on said layer of electrically conductive polymer material a layer of energy sensitive material;

exposing said resist to a pattern of energy to form a pattern in said layer of energy sensitive material;

developing said pattern forming a pattern in said layer resulting in exposed and unexposed regions of said electrically conductive polymer,

removing said electrically conductive polymer in said exposed regions;

removing said resist leaving a pattern of said electrically conductive polymer on said substrate.

81. A method according to claim 80 wherein said electrically conductive polymer is selected from the group consisting of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes combinations thereof and blends thereof with other polymers and copolymers of the monomers thereof.

82. A method according to claim 80 wherein said energy is selected from the group consisting of electromagnetic radiation, heat and a particle beam.

83. A method according to claim 80 wherein said developing is done by removing regions of said resist exposed to said energy.

84. A method according to claim 80 wherein said developing is done by removing regions of said resist not exposed to said energy.

85. A method according to claim 83 wherein said removing is done by chemically dissolving.

86. A method according to claim 84 wherein said removing is done by chemically dissolving.

87. A method according to claim 80 wherein said removing is done by reaction ion etching.

88. A method comprising:

providing a substrate having a layer of electrically conductive polymer material;

depositing a pattern of a metal layer through a metal mask forming a patterned metal layer on said layer of electrically conductive polymer, forming regions covered by said metal pattern and exposed regions of said electrically conductive polymer;

etching said exposed regions to remove said exposed regions;

removing said metal.

89. A method according to claim 88 wherein said electrically conductive polymer is selected from the group consisting of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes combinations thereof and blends thereof with other polymers and copolymers of the monomers thereof.

90. A method according to claim 89 wherein said mask is a molybdenum mask and said metal is platinum.

91. A method according to claim 89 wherein said etching is reactive ion etching.

92. A method according to claim 89 wherein said exposed regions are removed with acid.

93. A method comprising:

providing a substrate having a layer of an electrically conductive polymer;

disposing a layer of metal on said layer of electrically conductive polymer;

disposing an energy sensitive material on said metal layer;

exposing said energy sensitive material to a pattern of radiation;

developing said pattern forming a pattern in said energy sensitive material resulting in exposed and unexposed regions of said metal layer;

removing said metal layer in said exposed regions, resulting in exposed and unexposed regions of said electrically conductive polymer;

removing said exposed regions of said electrically conductive polymer;

removing said energy sensitive material;

removing the remaining portions of said metal layer.

94. A method according to claim 93 wherein said electrically conductive polymer is selected from the group consisting of one or more of substituted and unsubstituted polyparaphenylene vinylenes. polyparaphenylenes, polyanilines, polythiophenes, polvazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes combinations thereof and blends thereof with other polymers and copolymers of the monomers thereof.

95. A method according to claim 93 wherein said metal layer is selected from the group consisting of A1.

96. A method according to claim 93 wherein said radiation is electromagnetic radiation.

97. A method according to claim 93 wherein removing said metal layer in said exposed regions is by acid etch.

98. A method according to claim 93 wherein said removing of said electrically conductive polymer in said exposed regions is by reactive ion etching.

99. A method according to claim 93 wherein removing remaining portions of said metal layer is with an acid etchant.

100. A method comprising:

providing a substrate having a layer of an electrically conductive polymer material;

said electrically conductive polymer contains energy sensitive agents;

exposing said electrically conductive polymer to a pattern of energy forming a pattern of unexposed regions;

removing said electrically conductive polymer in one of said exposed and unexposed regions to form a pattern of said electrically conductive polymer on said substrate.

101. A method according to claim 100 wherein said electrically conductive polymer is selected from the group consisting of one or more of substituted and unsubstituted polyparaphenylene vinylenes, polyparaphenylenes, polyanilines, polythiophenes, polyazines, polyfuranes, polypyrroles, polyselenophenes, poly-p-phenylene sulfides, polyacetylenes combinations thereof and blends thereof with other polymers and copolymers of the monomers thereof.

102. A method according to claim 100 wherein said energy is selected from the group consisting of electromagnetic radiation, heat and a particle beam.

103. A method according to claim 100 wherein said developing is done by removing regions of said resist exposed to said energy.

104. A method according to claim 100 wherein said developing is done by removing regions of said resist not exposed to said energy.

105. A method according to claim 103 wherein said removing is done by chemically dissolving.

106. A method according to claim 104 wherein said removing is done by chemically dissolving.

107. A method according to claim 100 wherein said removing is done by reaction ion etching.

108. A method according to claim 100 wherein said energy sensitive agents are constituents of said electrically conductive polymer.

109. A method according to claim 100 wherein said energy sensitive agents are additives to electrically conductive polymer.

110. A method according to claim 108 wherein said electrically conductive polymer comprises a precursor to an electrically conductive polymer and a dopant.

111. A method according to claim 110 wherein said constituents are on said precursor.

112. A method according to claim 110 wherein said constituents are on said dopants.

114. A structure according to claim 113 wherein said semiconductor is selected from the group consisting of an organic semiconductor and an inorganic semiconductor.

121. A method according to claim 120 wherein said at least one of said anode region and said cathode region is formed by patterning said electrically conductive polymer.

113. A structure comprising:

an ohmic contact between an electrically conductive polymer and a semiconductor.

115. A structure comprising:

a low contact resistance electrical joint between a non-polymeric electrical conductor and an electrically conductive polymer.

116. A method comprising:

providing a field effect transistor having a source region, a drain region and a gate region;

forming a source electrode, a drain electrode and a gate electrode;

at least one of said source electrode, said drain electrode and said gate electrode is formed by patterning an electrically conductive polymer.

117. A method comprising:

providing a bipolar transistor having an emitter region, a base region and a collector region;

forming an emitter electrode, a base electrode and a collector electrode;

at least one of said emitter electrode, said base electrode and said collector electrode is formed by patterning an electrically conductive polymer.

118. A structure comprising:

a bipolar transistor having an emitter region, a base region and a collector region;

an emitter electrode, a base electrode and a collector electrode;

at least one of said emitter electrode, said base electrode and said collector electrode is a patterned electrically conductive polymer.

119. A method comprising;

providing a light emitting diode having an electroluminescent region, an anode region and a cathode region;

forming an anode electrode and a cathode electrode;

at least one of said anode electrode and said cathode electrode is formed by patterning an electrically conductive polymer layer.

120. A method comprising;

providing a light emitting diode having an electroluminescent region, an anode region and a cathode region;

forming an anode electrode and a cathode electrode;

at least one of said anode region and said cathode region is formed from an electrically conductive polymer.

122. A method comprising:

providing an electronic device having an electrically active region;

forming an electrical contact to said electrically active region by patterning an electrically conductive polymer.

123. A structure comprising:

a surface of a non-dielectric material;

a layer of a dielectric material having a first surface disposed on said surface of a non-dielectric material and having a second surface;

said layer of said dielectric material has an edge;

a layer or electrically conductive polymer disposed on said second surface and over said edge onto said surface of non-dielectric material.

124. A structure comprising:

a semiconducting layer having a first and second side;

a dielectric layer on said first side;

a first patterned electrically conductive layer on said dielectric layer;

a second patterned electrically conductive layer on said second side;

at least one of said first, said second and said third patterned electrically conductive layers being an electrically conductive polymer.

125. A field effect transistor comprising a source electrode, drain electrode and gate electrode at least one of which is a patterned electrically conductive polymer.

126. A structure comprising:

an insulating layer having a first side and a second side;

a gate disposed on said first side of said insulating layer;

a semiconductor layer disposed on said second side over said patterned source electrode and said patterned drain electrode;

a patterned source electrode disposed on said second side;

at least one of said patterned gate, said patterned source and said patterned drain being an electrically conductive polymer.

127. A structure comprising:

a semiconductor layer selected from the group consisting of an organic and inorganic semiconductor;

a patterned electrically conductive polymer layer disposed on said semiconductor layer.

128. A structure comprising:

a semiconductor layer;

a first opening in said dielectric layer exposing said semiconductor layer therein at a first region;

a second opening in said dielectric layer exposing said semiconductor layer therein at a second region;

a first pattern of an electrical conductor disposed in electrical contact with said first region;

a second pattern of an electrical conductor disposed in electrical contact with said second region;

a third pattern of an electrical conductor disposed on said dielectric layer between said first and said second patterns;

at least one of said first, said second and said third pattern of an electrical conductor is a patterned electrically conductive polymer.

129. A structure comprising:

an electroluminescent region;

a hole injection region;

an electron injection region;

an anode contact;

a cathode contact;

at least one of said hole injection region and said electron injection region being an electrically conductive polymer.

130. A field effect transistor having a gate electrode, a source electrode and a drain electrode, at least one of which is a patterned electrically conductive polymer.

131. A bipolar transistor having an emitter electrode, a bare electrode and a collector electrode at least one of which is a patterned electrically conductive polymer.