Optical proximity correction

• US 20020026626A1
• Filed: 08/23/2001
• Published: 02/28/2002
• Est. Priority Date: 08/24/2000
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Palmer, Shane R., Aton, Thomas J., Randall, John N.
• Granted Patent: US 6,634,018 B2
• Time in Patent Office: Days
• US Class Current: 716/19
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]

Abstract

An improvement to the optical proximity correction process used in photolithography. Mask pattern modeling is added to the optical proximity correction process, producing patterns that are optimized for both reticle manufacture and wafer fabrication. Pattern validation is improved by applying a mask pattern model and a wafer pattern model to the validation process. Reticle inspection is improved by adding a mask inspection tool model that comprehends the limitations of the inspection tool.

Claims

1. A method of optical proximity correction, comprising the actions of:

modeling the transfer of a design pattern to a reticle, to thereby produce a reticle pattern image;

modeling the transfer of said reticle pattern image to a wafer, to thereby produce a wafer pattern image;

generating a comparison of said wafer pattern image and a reference pattern; and

modifying said design pattern if said step of generating a comparison fails to satisfy a set of design rules.

2. The method of claim 1, wherein said action of modeling the transfer of a design pattern to a reticle includes generating math operators that characterize the behavior of the mask writing system.

3. The method of claim 1, wherein said action of modeling the transfer of said reticle pattern image to a wafer includes generating math operators that characterize the behavior of the wafer fabrication process.

4. The method of claim 1, wherein said action of generating a comparison is accomplished with software tools that convert images to design geometries.

5. A method of optical proximity correction, comprising the actions of:

producing a wafer pattern image which accounts for changes in a design pattern caused during transfer to a reticle and transfer to a wafer; and

generating a comparison of said wafer pattern image and a reference pattern.

6. The method of claim 5, further comprising the action of modifying said design pattern if said action of comparing fails to satisfy a set of design criteria.

7. The method of claim 5, wherein said action of generating a comparison is accomplished with software tools that convert images to design geometries.

8. A method of validating a modified design pattern in optical proximity correction, comprising the actions of:

modeling the transfer of said modified design pattern to a reticle, to thereby produce a reticle pattern image;

modeling the transfer of said reticle pattern image to a wafer, to thereby produce a wafer pattern image; and

generating a comparison of said wafer pattern image and a reference pattern.

9. The method of claim 8, wherein said action of modeling the transfer of said modified design pattern to a reticle includes generating math operators that characterize the behavior of the mask writing system.

10. The method of claim 8, wherein said action of modeling the transfer of said reticle pattern image to a wafer includes generating math operators that characterize the behavior of the wafer fabrication system.

11. The method of claim 8, wherein said action of generating a comparison is accomplished with software tools that convert images to design geometries.

12. The method of claim 8, further comprising the action of modifying said design pattern if said comparison fails to satisfy a set of design criteria.

14. The method of claim 13, wherein said action of generating a comparison is accomplished with software tools that convert images to design geometries.

15. The method of claim 13, further comprising the action of modifying said design pattern if said comparison fails to satisfy a set of design criteria.

17. The method of claim 16, wherein said action of modeling the transfer of a design pattern to a reticle includes generating math operators that characterize the behavior of the mask writing system.

18. The method of claim 16, wherein said action of modeling how said reticle pattern image will be resolved includes generating math operators that characterize the behavior of the reticle inspection tool.

19. The method of claim 16, wherein said action of generating a comparison is accomplished with software tools that convert images to design geometries.

20. The method of claim 16, further comprising the action of modifying said design pattern if said comparison fails to satisfy a set of design criteria.

13. A method of validating a modified design pattern in optical proximity correction, comprising the actions of:

producing a wafer pattern image which accounts for changes to said modified design pattern caused by transfer to a reticle and to a wafer; and

generating a comparison of said wafer pattern image and a reference pattern.

16. A method of inspecting a reticle in optical proximity correction, comprising the actions of:

modeling the transfer of a design pattern to a reticle, to thereby produce a reticle pattern image;

modeling how said reticle pattern image will be resolved by a mask inspection tool, to thereby produce a reticle inspection image;

generating a comparison of said reticle and said reticle inspection image.

21. A method of correcting design patterns for wafer fabrication, comprising the actions of:

correcting for changes in said design pattern occurring during transfer of the pattern to the reticle; and

correcting for changes in said design pattern occurring during transfer of the pattern to the wafer.

22. A method of image processing, comprising the actions of:

correcting for changes introduced in an image during transfer of that image by characterizing the behavior of the transfer system using a model.