LOW LEAKAGE CURRENT SILICON CARBONITRIDE PREPARED USING METHANE, AMMONIA AND SILANE FOR COPPER DIFFUSION BARRIER, ETCHSTOP AND PASSIVATION APPLICATIONS
First Claim
Patent Images
1. A semiconductor device, comprising:
- a metal portion providing electrical connections to underlying layers;
a silicon carbon nitride (SiCN) layer overlying the metal portion; and
a dielectric layer overlying the SiCN layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A silicon carbon nitride (SiCN) layer is provided which has a low leakage current and is effective in preventing the migration or diffusion of metal or copper atoms through the SiCN layer. The SiCN layer can be used as a diffusion barrier between a metal portion (such as a copper line or via) and an insulating dielectric to prevent metal atom diffusion into the dielectric. The SiCN layer can also be used as an etchstop or passivation layer. The SiCN layer can be applied in a variety ways, including PECVD (e.g., using SiH4, CH4, and NH3) and HDP CVD (e.g., using SiH4, C2H2, and N2)
-
Citations
35 Claims
-
1. A semiconductor device, comprising:
-
a metal portion providing electrical connections to underlying layers;
a silicon carbon nitride (SiCN) layer overlying the metal portion; and
a dielectric layer overlying the SiCN layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 30, 31)
-
-
15. A method of forming a semiconductor device, comprising:
-
forming a metal portion over underlying connections;
depositing a silicon carbon nitride (SiCN) layer over the metal portion; and
depositing a dielectric layer over the SiCN layer.
-
-
29. A method of cleaning processing residue, comprising:
introducing NH3 or H2 feed gas into a PECVD chamber, wherein the flow rate of the NH3 or H2 feed gas is between approximately 50 and 8000 sccm, and the high frequency and low frequency RF power are between 50 and 4000 W.
-
32. A method of cleaning processing residue, comprising:
introducing H2 feed gas into an HDP chamber, wherein the flow rate of the H2 feed gas is between approximately 0 and 2000 sccm, and the low frequency RF power is between 500 and 4000 W. - View Dependent Claims (33, 34, 35)
Specification