Plasma processing method and apparatus using dynamic sensing of a plasma environment
First Claim
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1. A plasma processing apparatus comprising:
- means for changing at least one parameter for controlling a process to the extent that the change does not affect the result of plasma processing on a wafer, said at least one parameter being selected from a group composed of power supplied to a plasma, a process pressure, a gas flow rate, and radio frequency bias power to the wafer; and
monitoring means for detecting a temporal change of a signal which occurs in a plasma state at the time of changing, wherein said plasma processing apparatus performs a control of the plasma processing and/or diagnosis of said apparatus using said detected signal.
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Abstract
At least one control parameter such as power supplied to a plasma, process pressure, gas flow rate, and radio frequency bias power to a wafer is changed for an extremely short time as compared with an entire plasma processing time, to the extent that such a change does not affect the result of plasma processing on the wafer, to monitor a temporal change of a plasma state which occurs at the time of changing. A signal resulting from the monitoring method is used to control or diagnose the plasma processing, thereby making it possible to accomplish miniature etching works, high quality deposition, surface processing.
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Citations
8 Claims
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1. A plasma processing apparatus comprising:
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means for changing at least one parameter for controlling a process to the extent that the change does not affect the result of plasma processing on a wafer, said at least one parameter being selected from a group composed of power supplied to a plasma, a process pressure, a gas flow rate, and radio frequency bias power to the wafer; and
monitoring means for detecting a temporal change of a signal which occurs in a plasma state at the time of changing, wherein said plasma processing apparatus performs a control of the plasma processing and/or diagnosis of said apparatus using said detected signal. - View Dependent Claims (2)
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3. A plasma processing apparatus comprising:
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monitoring means for optically, electrically, magnetically, mechanically, thermally, pressure-wisely, temperature-wisely, or otherwise physically or chemically detecting a signal representative of a temporal change in a plasma state immediately after a plasma is lit or immediately after the plasma is cut off in said plasma processing apparatus; and
means for performing a control of plasma processing and/or diagnosis of said apparatus using said detected signal.
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4. A plasma processing apparatus comprising:
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trigger means for changing at least one parameter for controlling a process to the extent that the change does not affect the result of plasma processing on a wafer, said at least one parameter being selected from a group including power supplied to a plasma, a process pressure, a gas flow rate, and radio frequency bias power to the wafer;
means for detecting a temporal change of a signal in a plasma light emission state which occurs in response to operation of said trigger means;
means for analyzing a plasma state or a process state utilizing a temporal change in plasma emission based on said detected signal; and
means for performing a control of plasma processing and/or diagnosis of said apparatus using data on a result of an analysis from said analyzing means.
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5. A plasma processing method comprising the steps of:
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changing at least one parameter for controlling a process to the extent that the change does not affect the result of plasma processing on a wafer, said at least one parameter being selected from a group including power supplied to a plasma, a process pressure, a gas flow rate, and radio frequency bias power to the wafer;
detecting a signal representative of a temporal change of a plasma state at the time of said changing using optically, electrically, magnetically, mechanically, thermally, pressure-wisely, temperature-wisely, or otherwise physically or chemically monitoring means; and
performing a control of plasma processing and/or diagnosis of said apparatus using said detected signal.
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6. A plasma processing method comprising the steps of:
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operating a plasma processing apparatus while intermittently cutting off the power supplied to the plasma;
detecting a signal representative of a temporal change in a plasma state immediately after the power is cut off, using optically electrically, magnetically, mechanically, thermally, pressure-wisely, temperature-wisely, or otherwise physically or chemically monitoring means; and
performing a control of plasma processing and/or diagnosis of said apparatus using said detected signal.
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7. A plasma processing method comprising the steps of:
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detecting a signal representative of a temporal change in a plasma state immediately after a plasma is lit or immediately after the plasma is cut of fusing a monitoring detector; and
performing a control of plasma processing and/or diagnosis of said apparatus using said detected signal.
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8. A plasma processing method comprising the steps of:
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changing at least one parameter for controlling a process to the extent that the change does not affect the result of plasma processing on a wafer, said at least one parameter being selected from a group including power supplied to a plasma, a process pressure, a gas flow rate, and radio frequency bias power to the wafer;
detecting a signal representative of a temporal change of a plasma light emission state which occurs in response to execution of said step of changing;
analyzing the plasma state or a process state utilizing a temporal change in plasma light emission represented by said detected signal; and
performing a control of plasma processing and/or diagnosis of said apparatus using data representative of a result of the analysis.
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Specification