Semiconductor device having ZnO based oxide semiconductor layer and method of manufacturing the same

• US 20020030196A1
• Filed: 09/13/2001
• Published: 03/14/2002
• Est. Priority Date: 09/13/2000
• Status: Abandoned Application

• Current Assignee: National Institute of Advanced Industrial Science and Technology (Government of Japan), ROHM Co., Ltd.
• Original Assignee: National Institute of Advanced Industrial Science and Technology (Government of Japan), ROHM Co., Ltd.
• Inventors: Niki, Shigeru, Nakahara, Ken, Matsubara, Koji, Yamada, Akimasa, Fons, Paul, Iwata, Kakuya
• Application Number:
  US09/950,813
• Publication Number:
  US 20020030196A1
• Time in Patent Office: Days
• US Class Current: 257/102
• CPC Class Codes: H01L 33/285 characterised by the doping materials
• CPC Class Codes: H01S 5/0213 Sapphire, quartz or diamond based substrates
• CPC Class Codes: H01S 5/3059 in II-VI materials
• CPC Class Codes: H01S 5/327 in AIIBVI compounds, e.g. ZnCdSe-laser

Abstract

In an LED, for example, a light emitting layer forming portion (10) composed of a ZnO based oxide semiconductor is provided on a substrate (11), which includes at least an n-type layer (14) and a p-type layer (16) to form a light emitting layer. The p-type layer (16) contains phosphorus as a dopant. In order to dope such phosphorus, for example, a material having a bond of Zn and P such as Zn₃P₂ is used when growing a ZnO based oxide semiconductor. As a result, it is possible to obtain a semiconductor device including a p-type ZnO based oxide semiconductor layer having a stable and high carrier concentration and a method of manufacturing the semiconductor device.

Claims

1. A semiconductor device comprising:

a substrate, and

at least a p-type ZnO based oxide semiconductor layer provided on said substrate,

wherein said p-type ZnO based oxide semiconductor layer contains a phosphorus (P) as a dopant.

2. The semiconductor device of claim 1, wherein said p-type layer contains, as a dopant, said phosphorus (P) and a III group element or said phosphorus (P) and a V group element other than said phosphorus (P).

3. A semiconductor light emitting device comprising:

a substrate, and

a light emitting layer forming portion composed of ZnO based oxide semiconductor, in which at least an n-type layer and a p-type layer are provided so as to form a light emitting layer on said substrate,

wherein said p-type layer contains a phosphorus as a dopant.

4. The semiconductor light emitting device of claim 3, wherein said p-type layer contains a V group element other than said phosphorus.

5. The semiconductor light emitting device of claim 3, wherein said light emitting layer forming portion constitutes a light emitting diode or a laser diode.

6. The semiconductor light emitting device of claim 5, wherein said light emitting layer forming portion is formed by a double hetero structure in which an active layer composed of Cd_xZn₁₋

xO (0≦

×

<

1) is interposed by cladding layers composed of Mg_yZn<sub>1−

y</sub>O (0≦

y<

1).

7. A method of manufacturing a semiconductor device for growing at least a p-type ZnO based oxide semiconductor layer on a substrate,

wherein said p-type ZnO based oxide semiconductor layer is grown while supplying a compound of zinc and phosphorus together with raw materials constituting a ZnO based oxide.

8. The method of claim 7, wherein said compound of zinc and phosphorus is Zn₃P₂.