Semiconductor device having ZnO based oxide semiconductor layer and method of manufacturing the same
First Claim
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1. A semiconductor device comprising:
- a substrate, and at least a p-type ZnO based oxide semiconductor layer provided on said substrate, wherein said p-type ZnO based oxide semiconductor layer contains a phosphorus (P) as a dopant.
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Abstract
In an LED, for example, a light emitting layer forming portion (10) composed of a ZnO based oxide semiconductor is provided on a substrate (11), which includes at least an n-type layer (14) and a p-type layer (16) to form a light emitting layer. The p-type layer (16) contains phosphorus as a dopant. In order to dope such phosphorus, for example, a material having a bond of Zn and P such as Zn3P2 is used when growing a ZnO based oxide semiconductor. As a result, it is possible to obtain a semiconductor device including a p-type ZnO based oxide semiconductor layer having a stable and high carrier concentration and a method of manufacturing the semiconductor device.
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8 Claims
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1. A semiconductor device comprising:
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a substrate, and at least a p-type ZnO based oxide semiconductor layer provided on said substrate, wherein said p-type ZnO based oxide semiconductor layer contains a phosphorus (P) as a dopant. - View Dependent Claims (2)
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3. A semiconductor light emitting device comprising:
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a substrate, and a light emitting layer forming portion composed of ZnO based oxide semiconductor, in which at least an n-type layer and a p-type layer are provided so as to form a light emitting layer on said substrate, wherein said p-type layer contains a phosphorus as a dopant. - View Dependent Claims (4, 5, 6)
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7. A method of manufacturing a semiconductor device for growing at least a p-type ZnO based oxide semiconductor layer on a substrate,
wherein said p-type ZnO based oxide semiconductor layer is grown while supplying a compound of zinc and phosphorus together with raw materials constituting a ZnO based oxide.
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