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Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks

  • US 20020030198A1
  • Filed: 08/06/2001
  • Published: 03/14/2002
  • Est. Priority Date: 02/05/1999
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a substrate;

    an AlxGayInzN structure including a n-type layer, a p-type layer, and an active layer, positioned proximate to the substrate;

    a first mirror stack, interposing the substrate and a bottom side of the AlxGayInzN structure;

    a wafer bonded interface, interposing the first mirror stack and a selected one of the substrate and AlxGayInzN structure, having a bonding temperature; and

    a p and an n contact, the p contact electrically connected to the p-type layer, the n contact electrically connected to the n-type layer.

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