Photodetector with built-in circuit and method for producing the same
First Claim
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1. A photodetector with a built-in circuit, comprising:
- a semiconductor substrate;
an integrated circuit provided on the semiconductor substrate; and
a photodiode provided on the semiconductor substrate, wherein the integrated circuit includes a SiGe layer provided on at least a portion of the integrated circuit.
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Abstract
A photodetector with a built-in circuit includes a semiconductor substrate, an integrated circuit provided on the semiconductor substrate, and a photodiode provided on the semiconductor substrate. The integrated circuit includes a SiGe layer provided on at least a portion of the integrated circuit.
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Citations
16 Claims
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1. A photodetector with a built-in circuit, comprising:
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a semiconductor substrate;
an integrated circuit provided on the semiconductor substrate; and
a photodiode provided on the semiconductor substrate, wherein the integrated circuit includes a SiGe layer provided on at least a portion of the integrated circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for producing a photodetector with a built-in circuit, wherein the photodetector with a built-in circuit includes:
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a semiconductor substrate;
an integrated circuit formed on the semiconductor substrate; and
a photodiode provided on the semiconductor substrate, wherein the integrated circuit includes a SiGe layer formed on at least a portion of the integrated circuit, the method includes the steps of;
a) forming the photodiode on the semiconductor substrate; and
b) forming the SiGe layer after the photodiode is formed. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification