Semiconductor device, method of fabricating the same, stack-type semiconductor device, circuit board and electronic instrument
First Claim
1. A method of fabricating a semiconductor device comprising:
- a first step of forming a through hole in a semiconductor element having a plurality of electrodes on a first surface; and
a second step of forming a conductive layer which is electrically connected to the electrodes and is provided from the first surface through an inner wall of the through hole to a second surface of the semiconductor element which is opposite to the first surface, wherein the conductive layer is formed to have connecting portions on the first and second surfaces so that a distance between at least two electrodes among the plurality of electrodes is different from a distance between the connecting portions on at least one of the first and second surfaces, in the second step.
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Accused Products
Abstract
A method of fabricating a semiconductor device including: a first step of forming a through hole in a semiconductor element having electrodes on a first surface; and a second step of forming a conductive layer which is electrically connected to the electrodes and is provided from the first surface through an inner wall of the through hole to a second surface of the semiconductor element which is opposite to the first surface. The conductive layer is formed to have connecting portions on the first and second surfaces so that a distance between at least two electrodes among the electrodes is different from a distance between the connecting portions on at least one of the first and second surfaces, in the second step.
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Citations
43 Claims
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1. A method of fabricating a semiconductor device comprising:
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a first step of forming a through hole in a semiconductor element having a plurality of electrodes on a first surface; and
a second step of forming a conductive layer which is electrically connected to the electrodes and is provided from the first surface through an inner wall of the through hole to a second surface of the semiconductor element which is opposite to the first surface, wherein the conductive layer is formed to have connecting portions on the first and second surfaces so that a distance between at least two electrodes among the plurality of electrodes is different from a distance between the connecting portions on at least one of the first and second surfaces, in the second step. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42)
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24. A semiconductor device comprising:
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a semiconductor element having a through hole and a plurality of electrodes formed on a first surface of the semiconductor element;
a conductive layer which is electrically connected to the electrodes, and is provided from the first surface through an inner wall of the through hole to a second surface of the semiconductor element which is opposite to the first surface; and
a plurality of connecting portions provided on the conductive layer so that a distance between two connecting portions among the plurality of connecting portions is different from a distance between at least two electrodes among the plurality of electrodes, on at least one of the first and second surfaces. - View Dependent Claims (43)
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Specification