Electronic device manufacture

• US 20020030297A1
• Filed: 09/08/2001
• Published: 03/14/2002
• Est. Priority Date: 09/13/2000
• Status: Active Grant

• Current Assignee: Shipley Company, LLC (Dow, Inc.)
• Original Assignee: Shipley Company, LLC (Dow, Inc.)
• Inventors: You, Yujian, Gallagher, Michael K.
• Granted Patent: US 6,596,467 B2
• Time in Patent Office: Days
• US Class Current: 264/49
• CPC Class Codes: B29C 67/202 comprising elimination of a solid or a liquid ingredient
• CPC Class Codes: H01L 21/02137 the material comprising alkyl silsesquioxane, e.g. MSQ
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/31695 Deposition of porous oxides or porous glassy oxides or oxide based porous glass
• CPC Class Codes: H01L 21/481 Insulating layers on insulating parts, with or without metallisation
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 2221/1047 the air gaps being formed by pores in the dielectric
• CPC Class Codes: H05K 1/024 Dielectric details, e.g. changing the dielectric material around a transmission line
• CPC Class Codes: H05K 2201/0116 Porous, e.g. foam
• CPC Class Codes: Y10T 428/24331 including nonapertured component

Abstract

Disclosed are methods of manufacturing electronic devices, particularly integrated circuits. Such methods include the use of low dielectric constant material prepared by using a removable porogen material.

Claims

1. A method for producing an electronic device comprising the steps of:

a) disposing on a substrate surface a B-staged dielectric matrix composition comprising one or more dielectric matrix materials and a removable porogen;

b) curing the B-staged dielectric matrix composition to form a dielectric matrix material without substantially removing the porogen;

c) patterning the dielectric matrix material;

d) depositing a metal layer on the surface of the dielectric material; and

then

e) subjecting the dielectric matrix material to conditions which at least partially remove the porogen to form a porous dielectric material layer without substantially degrading the dielectric material.

2. The method of claim 1 wherein the B-staged dielectric material is selected from one or more of organo polysilicas;

carbides, oxides, nitrides and oxyfluorides of silicon, boron, or aluminum;

benzocyclobutenes;

poly(aryl esters);

poly(ether ketones);

polycarbonates;

poly(arylene ethers);

polyaromatic hydrocarbons;

poly(perfluorinated hydrocarbons);

polyimides;

polybenzoxazoles and polycycloolefins.

3. The method of claim 1 wherein the B-staged dielectric material is selected from alkyl silsesquioxanes;

aryl silsesquioxanes;

alkyl/aryl silsesquioxane mixtures; and

mixtures of alkyl silsesquloxanes.

4. The method of claim 1 wherein the metal layer is one or more of barrier layer, seed layer or aperture fill metal layer.

5. The method of claim 1 wherein the removable porogen is substantially compatible with B-staged dielectric material.

6. The method of claim 1 farther comprising the step of planarizing the metal layer prior to at least partially removing the porogen.

7. A method for producing an electronic device comprising the steps of:

a) disposing on a substrate surface a B-staged dielectric matrix composition comprising one or more dielectric matrix materials and a removable porogen;

b) curing the B-staged dielectric matrix composition to form a dielectric matrix material without substantially removing the porogen;

c) patterning the dielectric matrix material;

d) depositing at least one of a barrier layer or seed layer on the surface of the dielectric material;

e) depositing an aperture fill metal layer;

f) planarizing the aperture fill metal layer; and

then

g) subjecting the dielectric matrix material to conditions which at least partially remove the porogen to form a porous dielectric material layer without substantially degrading the dielectric material.

8. The method of claim 7 wherein the B-staged dielectric material is selected from one or more of organo polysilicas;

carbides, oxides, nitrides and oxyfluorides of silicon, boron, or aluminum;

benzocyclobutenes;

poly(aryl esters);

poly(ether ketones);

polycarbonates;

poly (arylene ethers);

polyaromatic hydrocarbons;

poly(perfluorinated hydrocarbons);

polyimides;

polybenzoxazoles and polycycloolefins.

9. The method of claim 7 wherein the aperture fill metal layer comprises copper or copper alloy.

10. The method of claim 7 wherein the removable porogen is substantially compatible with B-staged dielectric material.

11. A method for manufacturing an electronic device comprising the steps of:

a) disposing on a substrate surface a B-staged dielectric matrix composition comprising one or more dielectric matrix materials and a removable porogen;

b) curing the B-staged dielectric matrix composition to form a dielectric matrix material without substantially removing the porogen;

c) patterning the dielectric matrix material;

d) depositing a metal layer on the surface of the dielectric material;

e) subjecting the dielectric matrix material to conditions which at least partially remove the porogen to form a porous dielectric material layer without substantially degrading the dielectric material; and

f) subjecting the porous dielectric layer to subsequent processing steps;

wherein the porous dielectric layer is free of an added cap layer.

13. The device of claim 12 wherein the porous dielectric layer is selected from one or more of organo polysilicas;

carbides, oxides, nitrides and oxyfluorides of silicon, boron, or aluminum;

benzocyclobutenes;

poly(aryl esters);

poly(ether ketones);

polycarbonates;

poly(arylene ethers);

polyaromatic hydrocarbons;

poly(perfluorinated hydrocarbons);

polyimides;

polybenzoxazoles and polycycloolefins.

12. An electronic device comprising a porous dielectric layer free of an added cap layer.

14. A method for improving the adhesion of a dielectric material to a porous dielectric material layer comprising the steps of:

a) removing porogens from a cured dielectric matrix material after a planarization step to form a porous dielectric material layer;

b) disposing on the porous dielectric material layer a B-staged dielectric matrix composition; and

c) curing the B-staged dielectric matrix composition to form a dielectric matrix material.