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Optical information processing equipment and semiconductor light emitting device suitable therefor

  • US 20020031153A1
  • Filed: 09/28/2001
  • Published: 03/14/2002
  • Est. Priority Date: 10/30/1996
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • at least a quantum-well active layer region made from a wurtzite type semiconductor material, wherein a crystal growth direction of said quantum-well active layer region is parallel to an axis which is inclined 15°

    or more from the [0001] axis (c-axis) or an axis equivalent thereto.

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