Flat panel display device and method for manufacturing the same
First Claim
1. A flat panel display device comprising:
- a thin film semiconductor switching element formed on a surface of a substrate;
a display electrode connected with said switching element;
a semiconductor layer for auxiliary capacity which is electrically connected with said display electrode;
a dielectric layer formed on a surface of said semiconductor layer for auxiliary capacity; and
a metal layer formed on a surface of said dielectric layer;
wherein the auxiliary capacity is constituted by the semiconductor layer for auxiliary capacity, the dielectric layer, and the metal layer; and
said switching element includes a channel region, and a semiconductor layer having source and drain regions disposed to sandwich the channel region therebetween and implanted respectively with an n-type or p-type impurity ion, the impurity ion having the same as the impurity ion concentration being implanted into the source/drain regions is implanted into the semiconductor layer for auxiliary capacity in the same step, a surface concentration of the n-type or p-type impurity ion is in the range of 3.2×
1019 to 2.0×
1020 atoms/cm3.
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Accused Products
Abstract
A flat panel display device comprising a thin film semiconductor switching element formed on a surface of a substrate, a display electrode connected with the switching element, a semiconductor layer for auxiliary capacity which is electrically connected with the display electrode, a dielectric layer formed on a surface of the semiconductor layer for auxiliary capacity, and a metal layer formed on a surface of the dielectric layer, wherein the auxiliary capacity is constituted by the semiconductor layer for auxiliary capacity, the dielectric layer, and the metal layer, and the semiconductor layer for auxiliary capacity is implanted all over the surface thereof with a high concentration of impurity ion.
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Citations
15 Claims
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1. A flat panel display device comprising:
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a thin film semiconductor switching element formed on a surface of a substrate;
a display electrode connected with said switching element;
a semiconductor layer for auxiliary capacity which is electrically connected with said display electrode;
a dielectric layer formed on a surface of said semiconductor layer for auxiliary capacity; and
a metal layer formed on a surface of said dielectric layer;
wherein the auxiliary capacity is constituted by the semiconductor layer for auxiliary capacity, the dielectric layer, and the metal layer; and
said switching element includes a channel region, and a semiconductor layer having source and drain regions disposed to sandwich the channel region therebetween and implanted respectively with an n-type or p-type impurity ion, the impurity ion having the same as the impurity ion concentration being implanted into the source/drain regions is implanted into the semiconductor layer for auxiliary capacity in the same step, a surface concentration of the n-type or p-type impurity ion is in the range of 3.2×
1019 to 2.0×
1020 atoms/cm3. - View Dependent Claims (2, 3, 4)
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5. A method of manufacturing a flat panel display device comprising:
- a thin film semiconductor switching element formed on a surface of a substrate;
a display electrode connected with said switching element;
a semiconductor layer for auxiliary capacity which is electrically connected with said display electrode;
a dielectric layer formed on a surface of said semiconductor layer for auxiliary capacity; and
a metal layer formed on a surface of said dielectric layer;
wherein the auxiliary capacity is constituted by said semiconductor layer for auxiliary capacity, said dielectric layer, and said metal layer;
said method comprising the steps of;
depositing a layer of said semiconductor switching element on the substrate concurrent with a deposition of said semiconductor layer for auxiliary capacity on the substrate;
forming a mask pattern covering a region of said switching element which is subsequently turned into a channel region but exposing entire surfaces of source/drain regions of said switching element and of said semiconductor layer for auxiliary capacity;
implanting an impurity ion through said mask pattern into entire surfaces of source/drain regions of said switching element and of said semiconductor layer for auxiliary capacity;
depositing a metal layer and subjecting said metal layer to a patterning process to thereby form a gate electrode of said switching element and an auxiliary capacity line facing said semiconductor layer for auxiliary capacity. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 14)
- a thin film semiconductor switching element formed on a surface of a substrate;
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13. A flat panel display device comprising:
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a thin film semiconductor switching element, and a thin film semiconductor element for driving circuit, both being formed on a surface of a substrate;
a display electrode connected with said switching element;
a semiconductor layer for auxiliary capacity which is electrically connected with said display electrode;
a dielectric layer formed on a surface of said semiconductor layer for auxiliary capacity; and
a metal layer formed on a surface of said dielectric layer;
wherein the auxiliary capacity is constituted by said semiconductor layer for auxiliary capacity, said dielectric layer, and said metal layer;
said thin film semiconductor element for driving circuit is provided with a semiconductor layer having a channel region bearing thereon a gate insulating film, and source/drain regions sandwiching said gate insulating film, each of source/drain regions being implanted with a predetermined concentration of impurity ions; and
said gate insulating film of said thin film semiconductor element for driving circuit contains not more than 1.1×
1013/cm2 in the number of defects per unit area.
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15. A flat panel display device comprising:
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a thin film semiconductor switching element formed on a surface of a substrate;
a display electrode connected with said switching element;
a semiconductor layer for auxiliary capacity which is electrically connected with said display electrode;
a dielectric layer formed on a surface of said semiconductor layer for auxiliary capacity; and
a metal layer formed on a surface of said dielectric layer;
wherein the auxiliary capacity is constituted by the semiconductor layer for auxiliary capacity, the dielectric layer, and the metal layer; and
said switching element includes a channel region, and a semiconductor layer having source and drain regions disposed to sandwich the channel region therebetween and implanted respectively with an n-type or p-type impurity ion, the impurity ion having the same as the impurity ion concentration being implanted into the source/drain regions is implanted into the semiconductor layer for auxiliary capacity in the same step, a carrier concentration thereof is 1.6×
1019 atoms/cm3 or more.
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Specification