Micro-mirror apparatus and production method therefor
First Claim
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1. A micro-mirror apparatus comprising:
- a mirror;
a plurality of torsion springs which supports the mirror so as to be tiltable relative to an upper substrate;
a lower substrate arranged facing a lower face of the mirror;
a convex portion provided on an upper face of the lower substrate and facing a central portion of the mirror; and
a plurality of lower electrodes formed on an outer face of the convex portion.
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Abstract
The micro-mirror apparatus of the invention has; a mirror 33, a plurality of torsion springs 35, 36 for supporting the mirror 33 so as to be tiltable relative to an upper substrate 27, a lower substrate 21 arranged facing a lower face of the mirror 33, a convex portion 34 provided on an upper face of the lower substrate 21 and a plurality of lower electrodes 22, 23 formed on an outer face of the convex portion 34. For the torsion spring 36, an aspect ratio of height/width in a cross-section perpendicular to a longitudinal direction thereof is at least 1.8.
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Citations
10 Claims
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1. A micro-mirror apparatus comprising:
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a mirror;
a plurality of torsion springs which supports the mirror so as to be tiltable relative to an upper substrate;
a lower substrate arranged facing a lower face of the mirror;
a convex portion provided on an upper face of the lower substrate and facing a central portion of the mirror; and
a plurality of lower electrodes formed on an outer face of the convex portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A production method for a micro-mirror apparatus comprising the steps of:
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sequentially forming on a support substrate, a first oxide layer, a first monocrystalline silicon layer, a second oxide layer and a second monocrystalline silicon layer;
forming a slot passing through the second monocrystalline silicon layer, the second oxide layer, and the first monocrystalline silicon layer;
forming a polysilicon layer inside the slot;
etching the second monocrystalline silicon layer to form a mirror and a torsion spring from the second monocrystalline silicon layer;
removing the polysilicon layer inside the slot;
etching a portion of the first monocrystalline silicon layer located beneath the torsion spring, through the slot; and
removing the first oxide layer and the second oxide layer to make the torsion spring independent.
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Specification