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Gas distribution apparatus for semiconductor processing

  • US 20020042205A1
  • Filed: 10/25/2001
  • Published: 04/11/2002
  • Est. Priority Date: 10/06/2000
  • Status: Active Grant
First Claim
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1. A gas distribution system useful for a reaction chamber used in semiconductor substrate processing, comprising:

  • a plurality of gas supplies;

    a mixing manifold wherein gas from the plurality of gas supplies is mixed together;

    a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, the gas supply lines including a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber;

    at least one control valve controlling a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines;

    at least one flow measurement device measuring flow rate of the mixed gas in the first and/or second gas supply line; and

    a controller operating the at least one control valve in response to the flow rate measured by the at least one flow measurement device.

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