Polishing cloth and method of manufacturing semiconductor device using the same

• US 20020046435A1
• Filed: 11/16/2001
• Published: 04/25/2002
• Est. Priority Date: 05/11/1998
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Yano, Hiroyuki
• Granted Patent: US 6,726,540 B2
• Time in Patent Office: Days
• US Class Current: 15/104.93
• CPC Class Codes: B24B 37/042 operating processes therefor
• CPC Class Codes: B24B 37/24 characterised by the composition or properties of the pad materials
• CPC Class Codes: B24B 37/26 characterised by the shape of the lapping pad surface, e.g. grooved
• CPC Class Codes: B24D 3/34 characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]

Abstract

A polishing cloth used for a chemical mechanical polishing comprises a base body holding a slurry on the surface and serving to mechanically polish the surface of a target object to be polished. Fine particles soluble in a solvent are dispersed in the base body.

Claims

1. A polishing cloth, comprising:

a base body holding a slurry on the surface and serving to mechanically polish a surface of a target object to be polished; and

fine particles dispersed in said base body and soluble in a solvent.

2. The polishing cloth according to claim 1, wherein said base body includes fine concavities resulting from dissolution of said fine particles in a solvent and formed on the surface of said base body.

3. The polishing cloth according to claim 1, wherein a coating layer insoluble in said solvent is formed to cover the outer surfaces of the fine particles.

4. The polishing cloth according to claim 1, wherein voids are not present inside said base body.

5. The polishing cloth according to claim 1, wherein at least one of SiO₂, Al₂O₃ and chemicals (oxidizing agent) is dispersed in water in said slurry.

6. The polishing cloth according to claim 1, wherein said fine particles have a particle diameter of 5 to 30 μ

m.

7. A polishing cloth, comprising:

fine particles soluble in a solvent; and

a base body having said fine particles dispersed therein and holding a slurry on the surface, said fine particles being dissolved in said solvent when a surface of a target object is mechanically polished by said polishing cloth so as to form concavities on the surface of the polishing cloth.

8. The polishing cloth according to claim 7, wherein a coating layer insoluble in said solvent is formed to cover the outer surfaces of the fine particles.

9. The polishing cloth according to claim 7, wherein voids are not present inside said base body.

10. The polishing cloth according to claim 7, wherein at least one of SiO₂, Al₂O₃ and chemicals (oxidizing agent) is dispersed in water in said slurry.

11. The polishing cloth according to claim 7, wherein said fine particles have a particle diameter of 5 to 30 μ

m.

13. The method of manufacturing a semiconductor device by using a polishing cloth according to claim 12, wherein said metal wiring contains Al as a main component.

14. The method of manufacturing a semiconductor device by using a polishing cloth according to claim 12, wherein said metal wiring contains Cu as a main component.

15. The method of manufacturing a semiconductor device by using a polishing cloth according to claim 12, wherein said metal wiring contains W as a main component.

17. The method of manufacturing a semiconductor device by using a polishing cloth according to claim 16, wherein said oxide film is a SiO₂ film.

12. A method of manufacturing a semiconductor device by using a polishing cloth, comprising the steps of:

forming an insulating film on a substrate, followed by forming a wiring groove on said substrate through said insulating film;

forming a metal wiring layer on the substrate and in said wiring groove;

burying said metal wiring in said wiring groove; and

polishing mechanically the metal wiring buried in said wiring groove with a polishing cloth so as to remove an undesired portion of the metal wiring and, thus, to flatten the surface of the metal wiring, said polishing cloth comprising a base body holding a slurry on the surface and serving to mechanically polish a surface of a target object to be polished, and fine particles dispersed in said base body and soluble in a solvent.

16. A method of manufacturing a semiconductor device by using a polishing cloth, comprising the steps of:

forming a groove in a substrate;

forming an insulating film on said substrate such that said insulating film is buried in said groove; and

polishing the insulating film by using a polishing cloth so as to remove an undesired portion of the insulating film, thus, to flatten the surface of the insulating film, said polishing cloth comprising a base body holding a slurry on the surface and serving to mechanically polish a surface of a target object to be polished, and fine particles dispersed in said base body and soluble in a solvent.