Semiconductor device

• US 20020047187A1
• Filed: 08/30/2001
• Published: 04/25/2002
• Est. Priority Date: 08/31/2000
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Corporation
• Inventors: Nakajima, Yoshihiro, Fukuizumi, Akira
• Granted Patent: US 6,849,930 B2
• Time in Patent Office: Days
• US Class Current: 257/666
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/371 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/3716 Iron [Fe] as principal constituent
• CPC Class Codes: H01L 2224/3754 Coating
• CPC Class Codes: H01L 2224/40095 Kinked
• CPC Class Codes: H01L 2224/40245 the item being metallic
• CPC Class Codes: H01L 2224/43 Manufacturing methods
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48624 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48639 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48644 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/73221 : Strap and wire connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/84385 : Shape, e.g. interlocking features
• CPC Class Codes: H01L 2224/8485 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 23/49524 : the additional leads being a tape carrier or flat leads
• CPC Class Codes: H01L 23/49548 : Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 24/35 : Manufacturing methods
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01088 : Radium [Ra]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/351 : Thermal stress

Abstract

The present invention provides a semiconductor device whose reliability is improved by improving the adhesion strength of a metal plate or connecting chip, said plurality of electrodes and a lead frame with a molding resin. Further, the semiconductor device of the present invention prevents flow out of a conductive joining material to be employed for joining a lead terminal and the metal plate other than the joining range of the metal plate and the lead terminal, and mounts the metal plate at high precision. In a semiconductor device (a plastic package) in which a source electrode of a semiconductor chip and source terminal of a lead frame are electrically connected by a copper plate and sealed by a resin, the surface of the copper plate is roughened to improve the adhesion strength to a molding resin. Further, a stepped part is formed in the source terminal to prevent a conductive paste from flowing out. The structure is so formed as to fit claw parts in the lead frame.

Claims

1. A semiconductor device comprising:

a semiconductor chip having a plurality of electrodes;

wiring materials having a plurality of lead terminals;

a metal plate connecting with said plurality of electrodes at a first portion of said metal plate and connecting with said plurality of lead terminals at a second portion of said metal plate; and

a molding resin sealing said semiconductor chip, parts of said wiring materials, and said metal plate, wherein

a surface of said metal plate is uneven and joined to said molding resin.

2. The semiconductor device as claimed in claim 1 wherein said metal plate connects with said plurality of electrodes and said plurality of lead terminals by a plating formed on said metal plate.

3. The semiconductor device as claimed in claim 2 wherein said metal plate has at least one bent part between said first portion and said second portion, and

wherein said plating is formed on said first portion and said second portion.

4. The semiconductor device as claimed in claim 3 wherein said plating is formed only on said first portion and said second portion.

5. The semiconductor device as claimed in claim 4 wherein said metal plate has a groove formed at said bent part in a direction crossing a direction of said lead terminals.

6. The semiconductor device as claimed in claim 5 wherein said groove is formed in a recessed face side of said bent part of said metal plate.

7. The semiconductor device as claimed in claim 3 wherein said plurality of lead terminals are plated.

8. The semiconductor device as claimed in claim 3 wherein said plurality of lead terminals have a concave, and

wherein said metal plate are connected with said concave by a conductive bonding material.

9. The semiconductor device as claimed in claim 8 wherein said surface of said metal plate is roughened.

10. The semiconductor device as claimed in claim 8 wherein said surface of said metal plate is dimpled.

11. The semiconductor device as claimed in claim 8 wherein said metal plate has at least one through hole.

12. The semiconductor device as claimed in claim 8 wherein said surface of said metal plate has a plurality of whisker platings.

13. The semiconductor device as claimed in claim 3 wherein said metal plate has claw parts fitted in said wiring materials.

14. The semiconductor device as claimed in claim 13 wherein said surface of said metal plate is roughened.

15. The semiconductor device as claimed in claim 13 wherein said surface of said metal plate is dimpled.

16. The semiconductor device as claimed in claim 13 wherein said metal plate has at least one through hole.

17. The semiconductor device as claimed in claim 13 wherein said surface of said metal plate has a plurality of whisker platings.

19. The semiconductor device as claimed in claim 18 wherein said surface of said metal plate is roughened.

20. The semiconductor device as claimed in claim 18 wherein said surface of said metal plate is dimpled.

18. A semiconductor device comprising:

a semiconductor chip having a plurality of electrodes;

wiring materials having a plurality of lead terminals;

a metal plate connecting with said plurality of electrodes at a first portion of said metal plate and connecting with said plurality of lead terminals at a second portion of said metal plate by a plating formed on said metal plate, said metal plate having at least one bent part between said first portion and said second portion and a groove formed at said bent part in a direction crossing a direction of said lead terminals; and

a molding resin sealing said semiconductor chip, parts of said wiring materials, and said metal plate, wherein

a surface of said metal plate is uneven and joined to said molding resin.