Solid state RF oscillator-detector for flow cytometer

• US 20020047697A1
• Filed: 09/14/2001
• Published: 04/25/2002
• Est. Priority Date: 08/13/1999
• Status: Active Grant

• Current Assignee: Frederick K. Husher, Gerard Schneider, Lazaro Ramirez
• Original Assignee: Frederick K. Husher, Gerard Schneider, Lazaro Ramirez
• Inventors: Schneider, Gerard, Ramirez, Lazaro, Husher, Frederick K.
• Granted Patent: US 6,452,372 B1
• Time in Patent Office: Days
• US Class Current: 324/71.1
• CPC Class Codes: G01N 15/132 Circuits
• CPC Class Codes: H03B 2200/0038 including a current mirror
• CPC Class Codes: H03B 5/1206 using multiple transistors for amplification
• CPC Class Codes: H03B 5/1231 the amplifier comprising one or more bipolar transistors
• CPC Class Codes: H03B 5/124 the means comprising a voltage dependent capacitance

Abstract

A junction field effect transistor (JFET) RF oscillator-detector circuit generates an RF signal for an apparatus for conducting electrical measurements of particles contained in a carrier fluid passing through an aperture in a cytometer flow cell. The JFET oscillator includes a plurality of parallel-coupled JFETs having respectively different V_DS vs. I_DS characteristics, that are biased to operate at square law detection regions of their respective V_DS vs. I_DS characteristics. One JFET operates in Class C mode, while the other operates in Class AB mode. An RF resonant circuit is electrically coupled to the JFETs and to the measurement cell, and is operative to establish the frequency of an RF field applied to the measurement cell. An RF load change detection circuit is coupled to the RF resonator circuit and is operative to detect an RF load change associated with a modification of the RF field as a result of a particle within the measurement cell aperture.

Claims

1. A circuit for use in an apparatus for conducting electrical measurements of particles contained in a carrier fluid, that passes through an aperture in a measurement cell to which an electric field is applied, said circuit comprising a solid state RF Hartley oscillator-detector containing a plurality of solid state devices having respectively different transfer function characteristics, and an RF resonant circuit electrically coupled to said plurality of solid state devices and said measurement cell.

2. A circuit according to claim 1, wherein said RF resonant circuit comprises a low Q RF resonant circuit that is matched to the impedance of said measurement cell.

3. A circuit according to claim 1, wherein said RF resonant circuit includes a transformer that is operative to step up the RF voltage variation output of said RF oscillator-detector to an elevated RF voltage variation applied to said measurement cell, and increase the electrical impedance of said RF oscillator-detector seen by said measurement cell.

4. A circuit according to claim 1, wherein said measurement cell includes electrodes adjacent to said aperture, and further including an interface circuit that is operative to couple a DC voltage from a DC voltage source, and an RF voltage from said RF resonator circuit to said electrodes of said measurement cell, and to derive changes in said DC voltage and said RF voltage, while decoupling said DC voltage from said RF voltage.

5. A circuit according to claim 1, wherein said RF oscillator-detector comprises a junction field effect transistor (JFET)-based Hartley RF oscillator.

6. A circuit according to claim 5, wherein said JFET-based Hartley RF oscillator includes a plurality of parallel-coupled JFETs having respectively different V_DS vs. I_DS characteristics, with a first JFET of said plurality of JFETs operating in Class C mode, and a second JFET of said plurality of JFETs operating in Class AB mode.

7. A circuit according to claim 2, further including an RF load change detection circuit coupled to said RF resonator circuit and being operative to detect a change associated with a particle detected in said measurement cell aperture.

8. A circuit according to claim 7, further including a current mirror coupled an RF load sensing node of said RF load change detection circuit, and being operative to maintain a constant output impedance over changes in compliance voltage.

9. A circuit according to claim 8, further including a bypass capacitor coupled to said RF load sensing node, and wherein parameters of said bypass capacitor and said current mirror are selected to maximize the magnitude of an RF load change detection pulse at said RF load sensing node.

10. A circuit according to claim 8, wherein said RF oscillator-detector comprises a junction field effect transistor (JFET)-based RF oscillator, that includes a plurality of parallel-coupled JFETs having respectively different V_DS vs. I_DS characteristics, with a first JFET of said plurality of JFETs operating in Class C mode, and a second JFET of said plurality of JFETs operating in Class AB mode.

11. A circuit according to claim 2, wherein said low Q RF resonant circuit includes a glass piston variable tuning capacitor coupled with a winding of said transformer for establishing the resonant frequency of said RF resonant circuit.

12. A circuit according to claim 3, wherein said transformer includes a tickler transformer winding coupled to an RF oscillation detector for providing an indication of the operational state of said RF oscillator.

14. A JFET RF oscillator-detector circuit according to claim 13, wherein said RF resonant circuit comprises a low Q RF resonant circuit containing a transformer that is operative to step up an RF voltage variation output of said RF oscillator-detector to an elevated RF voltage variation applied to said measurement cell, and increase the electrical impedance of said RF oscillator-detector seen by said measurement cell.

15. A JFET RF oscillator-detector circuit according to claim 14, further including a current mirror coupled to an RF load sensing node of said RF load change detection circuit and being operative to maintain a constant output impedance over changes in compliance voltage.

16. A JFET RF oscillator-detector circuit according to claim 15, further including a bypass capacitor coupled to said RF load sensing node, and wherein parameters of said bypass capacitor and said current mirror are selected to maximize the magnitude of an RF pulse at said RF load sensing node.

17. A JFET RF oscillator-detector circuit according to claim 16, wherein said low Q RF resonant circuit includes a glass piston variable tuning capacitor coupled with a winding of said transformer for establishing the resonant frequency of said RF resonant circuit.

18. A JFET RF oscillator-detector circuit according to claim 13, wherein said first JFET operates in Class C mode, and said second JFET operates in Class AB mode.

19. A JFET RF oscillator-detector circuit according to claim 13, wherein said measurement cell includes electrodes on input and output sides of said aperture, and further including an interface circuit that is operative to couple a DC voltage from a DC voltage source, and an RF voltage from said RF resonator circuit to said electrodes of said measurement cell, and to derive changes in said DC voltage and said RF voltage, while decoupling said DC voltage from said RF voltage.

20. A JFET RF oscillator-detector circuit according to claim 14, wherein said transformer includes a tickler transformer winding coupled to an RF oscillation detector for providing an indication of the operational state of said JFET RF oscillator.

13. A junction field effect transistor (JFET) RF oscillator-detector circuit for use in an apparatus for conducting electrical measurements of particles contained in a carrier fluid passing through an aperture in a measurement cell to which an electric field is applied, said JFET RF oscillator comprising:

a plurality of parallel-coupled JFETs having respectively different V_DS vs. I_DS characteristics, and being biased to operate at square law detection regions of their respective V_DS vs. I_DS characteristics, a first JFET of said plurality of JFETs operating in a first class mode, and a second JFET of said plurality of JFETs operating in second class mode different from said first class mode;

an RF resonant circuit electrically coupled to said plurality of parallel-coupled JFETs and to said measurement cell, and establishing the frequency of an RF field applied to said measurement cell; and

an RF load change detection circuit coupled to said RF resonator circuit and being operative to detect an RF load change associated with a modification of said RF field as a result of a particle within said measurement cell aperture.

21. For use in an apparatus for conducting electrical measurements of particles contained in a carrier fluid passing through an aperture in a measurement cell to which an electric field is applied, a method of coupling an RF field to said measurement cell and deriving changes in said RF electric field associated with the presence of a particle within said measurement cell aperture, said method comprising the steps of:

(a) providing an RF oscillator that includes a plurality of parallel-coupled JFETs having respectively different V_DS vs. I_DS characteristics, and biased to operate at square law detection regions of their respective V_DS vs. I_DS characteristics, with a first JFET of said plurality of JFETs operating in a first class mode, and a second JFET of said plurality of JFETs operating in second class mode different from said first class mode, and an RF resonant circuit electrically coupled between said plurality of parallel-coupled JFETs and to said measurement cell, and being operative to establish the frequency of an RF field applied to said measurement cell; and

(b) coupling said RF resonator circuit to an RF load detection circuit that is operative to detect an RF load change associated with a modification of said RF field as a result of said presence of a particle within said measurement cell aperture.

22. A method according to claim 21, wherein said RF resonant circuit comprises a transformer that is operative to step up an RF voltage variation output of said RF oscillator-detector to an elevated RF voltage variation applied to said measurement cell, and increase the electrical impedance of said RF oscillator-detector seen by said measurement cell, and wherein step (b) comprises coupling a current mirror to an RF load sensing node of said RF load detection circuit, said current mirror being operative to maintain a constant output impedance over changes in compliance voltage.

23. A method according to claim 22, wherein said transformer includes a tickler transformer winding coupled to an RF oscillation detector for providing an indication of the operational state of said RF oscillator.