Monitoring substrate processing with optical emission and polarized reflected radiation

• US 20020048019A1
• Filed: 03/08/2001
• Published: 04/25/2002
• Est. Priority Date: 10/23/2000
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Frum, Coriolan, Hsieh, Chang-lin, Yuan, Jie, Sui, Zhifeng
• Granted Patent: US 6,559,942 B2
• Time in Patent Office: Days
• US Class Current: 356/369
• CPC Class Codes: G01N 21/21 Polarisation-affecting properties G01N21/19 takes precedence
• CPC Class Codes: G01N 21/71 thermally excited
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC

Abstract

A substrate is etched in a process zone by placing the substrate in the process zone, providing an energized process gas in the process zone, and exhausting the process gas. A first stage of the etching process is monitored to determine completion of the first stage by detecting the intensities of one or more wavelengths of a radiation emission generated by the energized gas, generating a first signal in relation to the detected intensities, and evaluating the first signal. A second stage of the etching process is monitored to determine completion of the second stage by detecting the intensities of one or more wavelengths of a polarized radiation reflected from the substrate being etched, generating a second signal in relation to the detected intensities, and evaluating the second signal.

Claims

1. A method of etching a substrate in a process zone and monitoring the etching process, the method comprising:

(a) etching a substrate by placing the substrate in the process zone, providing an energized process gas in the process zone, and exhausting the process gas, whereby the energized gas may generate a radiation emission;

(b) determining completion of a first stage of the etching process by (i) detecting the intensities of one or more wavelengths of the radiation emission, (ii) generating a first signal in relation to the detected intensities, and (iii) evaluating the first signal; and

(c) determining completion of a second stage of the etching process by (i) detecting the intensities of one or more wavelengths of a polarized radiation reflected from the substrate being etched, (ii) generating a second signal in relation to the detected intensities, and (iii) evaluating the second signal.

2. A method according to claim 1 wherein the polarized radiation is polarized at one or more of (i) a first polarization angle that is substantially parallel to an orientation of a feature being etched on the substrate, and (ii) a second polarization angle that is substantially perpendicular to an orientation of a feature being etched on the substrate.

3. A method according to claim 2 wherein the substrate comprises a first layer and a second layer below the first layer, and wherein (b) comprises evaluating the first signal to determine a change in the intensities of one or more wavelengths of the radiation emission that arises from etching of the second layer.

4. A method according to claim 3 wherein (b) comprises evaluating the first signal to determine an increase in the intensities of one or more wavelengths of the radiation emission that arises from etching of the second layer.

5. A method according to claim 3 wherein (c) is performed after the first layer has been etched sufficiently to expose at least a portion of the second layer.

6. A method according to claim 3 wherein the first layer comprises a first index of refraction, and the second layer comprises a second index of refraction.

7. A substrate etching apparatus comprising:

a chamber comprising a substrate support to receive a substrate, a gas inlet to introduce a process gas into the chamber, a gas energizer to energize the process gas to form an energized gas capable of etching the substrate and generating a radiation emission, and an exhaust to exhaust the process gas;

one or more radiation detectors adapted to (i) detect the intensities of one or more wavelengths of the radiation emission and generate a first signal in relation to the detected intensities, and (ii) detect the intensities of one or more wavelengths of polarized radiation reflected from the substrate being etched and generate a second signal in relation to the detected intensities; and

a controller to evaluate the first signal to determine completion of a first stage of the etching process, and to evaluate the second signal to determine completion of a second stage of the etching process.

8. An apparatus according to claim 7 comprising a radiation polarizer adapted to polarize a radiation at one or more of (i) a first polarization angle that is substantially parallel to an orientation of a feature to be etched on the substrate, and (ii) a second polarization angle that is substantially perpendicular to an orientation of a feature to be etched on the substrate.

9. An apparatus according to claim 8 wherein the substrate comprises a first layer and a second layer below the first layer, and wherein the controller is adapted to evaluate the first signal to determine a change in the intensities of one or more wavelengths of the radiation emission that arise during etching of the second layer.

10. An apparatus according to claim 9 wherein the substrate comprises a first layer and a second layer below the first layer, and wherein the controller is adapted to evaluate the first signal to determine an increase in the intensities of one or more wavelengths of the radiation emission that arise during etching of the second layer.

11. An apparatus according to claim 9 wherein the controller is adapted to provide instructions to the one or more detectors to begin detecting the intensities of one or more wavelengths of polarized radiation reflected from the substrate after the first layer has been etched sufficiently to expose at least a portion of the second layer.

12. An apparatus according to claim 9 wherein the first layer comprises a first material comprising a first index of refraction, and the second layer comprises a second material comprising a second index of refraction.

13. An apparatus according to claim 7 further comprising an external radiation source adapted to direct a radiation towards the substrate, to form a reflected radiation, and a polarizer capable of polarizing the radiation before or after it is reflected from the substrate.

15. A method according to claim 14 wherein (b) comprises evaluating the first signal to determine an increase in the intensities of one or more wavelengths of the radiation emission.

16. A method according to claim 14 wherein (c) comprises evaluating the second signal by increasing the intensity of a signal component that arises from the polarized radiation reflected by the feature being etched on the substrate relative to other signal components.

17. A method according to claim 16 wherein (c) comprises evaluating the second signal by processing signal components of the detected polarized radiation that are polarized at different angles and determining a ratio or subtraction product of the signal components.

19. An apparatus according to claim 18 wherein the controller is adapted to evaluate the first signal to determine an increase in the intensities of one or more wavelengths of the radiation emission.

20. An apparatus according to claim 18 wherein the controller is adapted to evaluate the second signal by increasing the intensity of a signal component that arises from the polarized radiation reflected by the feature being etched on the substrate relative to other signal components.

21. An apparatus according to claim 20 wherein the controller is adapted to evaluate the second signal by processing signal components of the detected polarized radiation that are polarized at different angles and determining a ratio or subtraction product of the signal components.

14. A method of etching a substrate in a process zone and monitoring the etching process, the method comprising:

(a) etching a substrate by (i) placing the substrate in the process zone, the substrate comprising a first layer and a second layer below the first layer, (ii) providing an energized process gas in the process zone, and (iii) exhausting the process gas, whereby the energized gas generates a radiation emission;

(b) determining completion of etching of the first layer by (i) detecting the intensities of one or more wavelengths of the radiation emission, (ii) generating a first signal in relation to the detected intensities, and (iii) evaluating the first signal to determine a change in the intensities of one or more wavelengths of the radiation emission that arises from etching of the second layer; and

(c) monitoring the depth of etching of the second layer by (i) detecting the intensities of one or more wavelengths of polarized radiation reflected from the substrate being etched, wherein the polarized radiation is polarized at one or more of a first polarization angle that is substantially parallel to an orientation of a feature being etched on the substrate and a second polarization angle that is substantially perpendicular to an orientation of a feature being etched on the substrate, (ii) generating a second signal in relation to the detected intensities, and (iii) evaluating the second signal.

18. A substrate etching apparatus adapted to etch a substrate comprising a first layer and a second layer below the first layer, the apparatus comprising:

a chamber comprising a substrate support to receive the substrate, a gas inlet to introduce a process gas into the chamber, a gas energizer to energize the process gas to form an energized gas capable of etching the substrate and generating a radiation emission, and an exhaust to exhaust the process gas;

a radiation polarizer adapted to polarize a radiation at one or more of (i) a first polarization angle that is substantially parallel to an orientation of a feature to be etched on the substrate, and (ii) a second polarization angle that is substantially perpendicular to an orientation of a feature to be etched on the substrate;

one or more radiation detectors adapted to (i) detect the intensities of one or more wavelengths of the radiation emission and generate a first signal in relation to the detected intensities, and (ii) detect the intensities of one or more wavelengths of the polarized radiation reflected from a surface of the substrate being etched and generate a second signal in relation to the detected intensities; and

a controller adapted to (i) evaluate the first signal to determine a change in the intensities of the one or more wavelengths of the radiation emission that arise during etching of the second layer, thereby determining completion of the first layer, and (ii) evaluate the second signal to monitor the depth of etching of the second layer.