Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system

• US 20020048128A1
• Filed: 10/19/2001
• Published: 04/25/2002
• Est. Priority Date: 10/20/2000
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Yoshikawa, Masatoshi, Iwasaki, Hitoshi, Koui, Katsuhiko, Yoda, Hiroaki, Takagishi, Masayuki, Nagata, Tomohiko, Yuasa, Hiromi, Sahashi, Masashi, Kamiguchi, Yuuzo
• Granted Patent: US 6,937,446 B2
• Time in Patent Office: Days
• US Class Current: 360/324.1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3133 including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure G11B5/3106 takes precedence
• CPC Class Codes: G11B 5/3143 including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding G11B5/3116, G11B5/312 take precedence
• CPC Class Codes: G11B 5/39 using magneto-resistive devices or effects
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3929 Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
• CPC Class Codes: H01F 10/3259 Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: Y10T 428/1114 having tunnel junction effect

Abstract

There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.

Claims

1. A magnetoresistance effect element comprising:

a magnetoresistance effect film including a magnetization fixed layer having a ferromagnetic film in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer having a ferromagnetic film in which the direction of magnetization varies in response to an external magnetic field, and an non-magnetic intermediate layer provided between the magnetization fixed layer and the magnetization free layer;

a pair of electrodes which are electrically connected to the magnetoresistance effect film for applying a current in a direction perpendicular to the plane of the magnetoresistance effect film; and

a resistant regulating layer which contains an oxide, a nitride, a fluoride, a carbide or a boride as a principal component.

3. A magnetoresistance effect element as set forth in claim 1, wherein the resistance regulating layer has pin holes at a rate of hole area which is 50% or less.

4. A magnetoresistance effect element as set forth in claim 1, wherein the resistance regulating layer is made of two kinds or more of metallic elements.

5. A magnetoresistance effect element as set forth in claim 1, wherein the resistance regulating layer is formed in the magnetization free layer, or on the magnetization free layer on the opposite side to the non-magnetic intermediate layer.

6. A magnetoresistance effect element as set forth in claim 1, wherein the resistance regulating layer is formed in the non-magnetic intermediate layer or on the interface of the non-magnetic intermediate layer.

7. A magnetoresistance effect element as set forth in claim 1, wherein the resistance regulating layer is formed in the magnetization fixed layer, or on the magnetization fixed layer on the opposite side to the non-magnetic intermediate layer.

8. A magnetoresistance effect element as set forth in claim 6, wherein the resistance regulating layer contains, as a principal component, at least one of oxides, nitrides, fluorides, carbides or borides of an element selected from the group consisting of B, Si, Ge, Ta, W, Nb, Al, Mo, P, V, As, Sb, Zr, Ti, Zn, Pb, Th, Be, Cd, Sc, La, Y, Pr, Cr, Sn, Ga, Cu, In, Rh, Pd, Mg, Li, Ba, Ca, Sr, Mn, Fe, Co, Ni and Rb.

9. A magnetoresistance effect element as set forth in claim 1, wherein the resistance regulating layer is formed on the magnetization free layer on the opposite side to the non-magnetic intermediate layer, or in the non-magnetic intermediate layer, or on the interface of the non-magnetic intermediate layer, and contains a metal including at least one of Cu, Au, Ag, Ru, Ir, Re, Rh, Pt, Pd, Al and Os.

10. A magnetoresistance effect element as set forth in claim 1, wherein the resistance regulating layer comprises:

a first region which is formed on the magnetization free layer on the opposite side to the non-magnetic intermediate layer, or in the non-magnetic intermediate layer, or on the interface of the non-magnetic intermediate layer, and which contains Cu as a principal component; and

a second region which contains, as a principal component, at least one of oxides, nitrides, fluorides, carbides and borides of an element selected from the group consisting of B, Fe, Mo, Pb, Ta, Cr, V, Si, Sb and Ge.

11. A magnetoresistance effect element as set forth in claim 6, wherein the resistance regulating layer comprises:

a first region which is formed on the magnetization free layer on the opposite side to the non-magnetic intermediate layer, or in the non-magnetic intermediate layer, or on the interface of the non-magnetic intermediate layer, and which contains Au as a principal component; and

a second region which contains, as a principal component, at least one of oxides, nitrides, fluorides, carbides and borides of an element selected from the group consisting of B, Fe, Ge, Mo, P, Rh, Si, W and Cr.

12. A magnetoresistance effect element as set forth in claim 1, wherein the resistance regulating layer comprises:

a first region which is formed on the magnetization free layer on the opposite side to the non-magnetic intermediate layer, or in the non-magnetic intermediate layer, or on the interface of the non-magnetic intermediate layer, and which contains Ag as a principal component; and

a second region which contains, as a principal component, at least one of oxides, nitrides, fluorides, carbides and borides of an element selected from the group consisting of Be, Co, Cr, Fe, Mo, Pb, Si, Ta, V, W, Ge, Sn, Al and Rh.

14. A magnetoresistance effect element as set forth in claim 1, wherein the resistance regulating layer has a thickness of 0.5 to 5 nm.

15. A magnetoresistance effect element as set forth in claim 1, wherein the resistance regulating layer includes holes of a metal phase of 2% to 30%.

16. A magnetoresistance effect element as set forth in claim 15, wherein the mean diameter of each of the holes of the resistance regulating layer is in the range of from 5% to 100% with respect to the total thickness of the magnetization free layer, the non-magnetic intermediate layer and the magnetization fixed layer.

17. A magnetoresistance effect element as set forth in claim 15, wherein the distance between adjacent two of the holes of the metal phase is in the range of from 10 nm to 100 nm.

18. A magnetoresistance effect element as set forth in claim 15, wherein the mean distance between adjacent two of the holes of the metal phase is in the range of from 10 nm to 100 nm.

19. A magnetic head having a magnetoresistance effect element as set forth in any one of claims 1 through 17.

20. A magnetic recording and/or reproducing system which has a magnetic head as set forth in claim 19 and which is capable of reading magnetic information stored in a magnetic recording medium.

2. A magnetoresistance effect element comprising:

a magnetoresistance effect film including a magnetization fixed layer having a ferromagnetic film in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer having a ferromagnetic film in which the direction of magnetization varies in response to an external magnetic field, and an non-magnetic intermediate layer provided between the magnetization fixed layer and the magnetization free layer;

a pair of electrodes which are electrically connected to the magnetoresistance effect film for applying a current in a direction perpendicular to the plane of said magnetoresistance effect film; and

a resistant regulating layer for restricting the quantity of a sense current passing through the magnetoresistance effect film.

13. A magnetoresistance effect element comprising:

a magnetoresistance effect film including a magnetization fixed layer having a ferromagnetic film in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer having a ferromagnetic film in which the direction of magnetization varies in response to an external magnetic field, and an non-magnetic intermediate layer provided between the magnetization fixed layer and the magnetization free layer;

a pair of electrodes which are electrically connected to the magnetoresistance effect film for applying a current in a direction perpendicular to the plane of the magnetoresistance effect film; and

a region which is formed on the magnetization free layer on the opposite side to the non-magnetic intermediate layer, or in the non-magnetic intermediate layer, or on the interface of the non-magnetic intermediate layer, and which contains, as a principal component, a crystalline oxide containing at least one selected from the group consisting of B, Si, Ge, W, Nb, Mo, P, V, Sb, Zr, Ti, Zn, Pb, Cr, Sn, Ga, Fe and Co.