A LAYERED STRUCTURE INCLUDING A NITRIDE COMPOUND SEMICONDUCTOR FILM AND METHOD FOR MAKING THE SAME

• US 20020048964A1
• Filed: 06/21/1999
• Published: 04/25/2002
• Est. Priority Date: 06/24/1998
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: YUASA, TAKAYUKI, UETA, YOSHIHIRO
• Granted Patent: US 6,380,051 B1
• Time in Patent Office: Days
• US Class Current: 438/763
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01S 2304/12 Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A method for forming a nitride compound semiconductor film of the present invention includes the steps of: providing a substrate having a portion which acts as a growth suppressing film on a outermost surface thereof; forming a growth promoting film partially on the substrate; and forming a nitride compound semiconductor on the growth promoting film.

Claims

1. A method for forming a nitride compound semiconductor film, the method comprising the steps of:

providing a substrate having a portion which acts as a growth suppressing film on a outermost surface thereof,

forming a growth promoting film partially on the substrate; and

forming a nitride compound semiconductor on the growth promoting film.

2. A method for forming a nitride compound semiconductor film according to claim 1, wherein the growth suppressing film is an amorphous film.

3. A method for forming a nitride compound semiconductor film according to claim 1, wherein the substrate is a crystal substrate of a cubic crystal structure having a surface along a (110) orientation or a (110) orientation.

4. A method for forming a nitride compound semiconductor film according to claim 1, wherein the growth promoting film is Zno or In_sGa_wAl₁₋

s−

wN(0≦

s≦

1, 0≦

w≦

1, and 0≦

s+w≦

1).

5. A method for forming a nitride compound semiconductor film according to claim 1, wherein a thickness of the growth promoting film is equal or greater than about 0.2 μ

m.

6. A method for forming a nitride compound semiconductor film according to claim 1, wherein the growth promoting film is in a form of a plurality of stripes separated from one another by an interval of about 20 μ

m or less.

7. A nitride compound semiconductor light-emitting diode, comprising:

a substrate having a portion which acts as a growth suppressing film on a top surface thereof;

a growth promoting film formed partially on the substrate; and

a nitride compound semiconductor layered structure including a light-emitting layer formed on the substrate, the light-emitting layer having a light-emitting region into which an electric current injected, wherein

the light-emitting region is formed above a region of the substrate where no growth promoting film is formed.