Semiconductor light-emitting device, method for fabricating the same, and method for driving the same
First Claim
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1. A semiconductor light-emitting device comprising:
- a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate;
a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on said first semiconductor layer;
an active layer, formed substantially in a uniform thickness between said first semiconductor layer and said second semiconductor layer, for generating emission light;
a first electrode for supplying a drive current to said first semiconductor layer; and
a second electrode for supplying a drive current to said second semiconductor layer, wherein said first electrode or said second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.
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Abstract
The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.
26 Citations
32 Claims
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1. A semiconductor light-emitting device comprising:
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a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate;
a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on said first semiconductor layer;
an active layer, formed substantially in a uniform thickness between said first semiconductor layer and said second semiconductor layer, for generating emission light;
a first electrode for supplying a drive current to said first semiconductor layer; and
a second electrode for supplying a drive current to said second semiconductor layer, wherein said first electrode or said second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16, 17, 18, 19)
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15. A method for fabricating a semiconductor light-emitting device comprising the steps of:
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growing successively a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type, each substantially in a uniform thickness;
exposing part of said first semiconductor layer to form then a first electrode on said first exposed semiconductor layer;
forming said second electrode on said second semiconductor layer; and
forming a divided electrode by isolating said first electrode or said second electrode electrically into a plurality of electrodes.
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20. A method for fabricating a semiconductor light-emitting device comprising the steps of:
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growing successively a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type, each substantially in a uniform thickness;
exposing part of said first semiconductor layer to form then a first n-side electrode on said first exposed semiconductor layer;
forming a second n-side electrode on a surface opposite to a surface of said substrate having said active layer; and
forming a p-side electrode on said second semiconductor layer. - View Dependent Claims (21, 22, 24, 25, 28, 30, 31, 32)
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23. A method for driving a semiconductor light-emitting device,
said semiconductor light-emitting device comprising a first semiconductor layer of a first conductivity type formed on a substrate, a second semiconductor layer of a second conductivity type formed on said first semiconductor layer, an active layer, formed between said first semiconductor layer and said second semiconductor layer, for generating emission light, a first electrode for supplying a drive current to said first semiconductor layer, and a second electrode, having the shape of a stripe, for supplying a drive current to said second semiconductor layer, wherein said first electrode or said second electrode is a divided electrode divided in the longitudinal direction of said second electrode, and said divided electrode comprising a first electrode portion located on the side of an emitting facet and a second electrode portion located on the side of a reflecting facet, said method comprising the steps of: -
to increase a relative lasing output of a laser beam, applying a first drive current to said first electrode portion and said second electrode portion, and to decrease a relative lasing output of a laser beam, applying said first drive current to said first electrode portion as well as applying a second drive current to said second electrode portion, the second drive current being less in magnitude than said first drive current, or applying no second drive current to said second electrode portion, or alternatively, applying said first drive current to said second electrode portion as well as applying said second drive current to said first electrode portion, said second drive current being less in magnitude than said first drive current, or applying no second drive current to said second electrode portion.
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26. A method for driving a semiconductor light-emitting device,
said semiconductor light-emitting device comprising a first semiconductor layer of a first conductivity type formed on a substrate, a second semiconductor layer of a second conductivity type formed on said first semiconductor layer, an active layer, formed between said first semiconductor layer and said second semiconductor layer, for generating emission light, a first electrode for supplying a drive current to said first semiconductor layer, and a second electrode, having the shape of a stripe, for supplying a drive current to said second semiconductor layer, wherein said first electrode or said second electrode is a divided electrode divided at an obverse surface and a reverse surface of the said substrate, and said divided electrode comprising a first electrode portion which covers almost all a surface of said substrate opposite to a surface of said active layer and a second electrode portion located on the emitting face side or the reflecting facet side on said first semiconductor layer, said method comprising the steps of: -
to increase a relative lasing output of a laser beam, applying a first drive current to said first electrode portion, and to decrease a relative lasing output of a laser beam, applying said first drive current to said second electrode portion, and applying a second drive current to said first electrode portion or applying no second drive current to said second electrode portion, said second drive current being less in magnitude than said first drive current.
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27. A method for driving a semiconductor light-emitting device,
said semiconductor light-emitting device comprising a first semiconductor layer of a first conductivity type formed on a substrate, a second semiconductor layer of a second conductivity type formed on said first semiconductor layer, an active layer, formed between said first semiconductor layer and said second semiconductor layer, for generating emission light, a first electrode for supplying a drive current to said first semiconductor layer, and a second electrode, having the shape of a stripe, for supplying a drive current to said second semiconductor layer, wherein said first electrode or said second electrode is a divided electrode divided in the longitudinal direction of said second electrode, and said divided electrode comprising a first electrode portion located on the side of an emitting facet and a second electrode portion located on the side of a reflecting facet, said method comprising the step of applying drive currents, different in magnitude from each other, to said first electrode portion and said second electrode portion so as to induce a self-pulsation.
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29. A method for driving a semiconductor light-emitting device,
said semiconductor light-emitting device being employed for reading information stored on a storage medium using a reflected beam of laser light emitted from said semiconductor light-emitting device having a lasing cavity, said method comprising the step of injecting a drive current nonuniformly into said cavity to read the stored information.
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Granted Patent
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Field of Search
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US Class Current257/81
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CPC Class CodesH01L 27/15 including semiconductor com...H01S 5/0422 with n- and p-contacts on t...H01S 5/04256 characterised by the config...H01S 5/04257 having positive and negativ...H01S 5/0625 in multi-section lasersH01S 5/0658 Self-pulsating
