Semiconductor light-emitting device and method of manufacturing the same

• US 20020050601A1
• Filed: 10/31/2001
• Published: 05/02/2002
• Est. Priority Date: 10/31/2000
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sugawara, Hideto, Saeki, Ryo, Jitosho, Tamotsu, Watanabe, Yukio
• Granted Patent: US 6,586,773 B2
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table

Abstract

A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on the first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer provided on the first bonding layer, coincident with the first bonding layer in the planar direction of the crystal, having the first conductivity type, and consisting essentially of a material represented by a formula In_xGa_yP, where 0≦x, y≦1, and x+y=1, and a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on the second bonding layer, each of the active layer and first and second cladding layers consisting essentially of a material represented by a formula In_xGa_yAl_zP, where x+y+z=1, and 0≦x, y, z≦1.

Claims

1. A semiconductor light-emitting device, comprising:

a first substrate of a first conductivity type;

a first bonding layer provided on said first substrate and consisting essentially of a GaP material of the first conductivity type;

a second bonding layer provided on said first bonding layer, coincident with the first bonding layer in the planar direction of the crystal, having the first conductivity type, and consisting essentially of a material represented by a general formula In_xGa_yP, where 0≦

x, y≦

1, and x+y=1; and

a light-emitting layer comprising a first cladding layer, an active layer, and a second cladding layer, which are successively provided on said second bonding layer, each of said first and second cladding layers having the first and a second conductivity types, and each of said active layer and first and second cladding layers consisting essentially of a material represented by a general formula In_xGa_yAl_zP, where x+y+z=1, and 0≦

x, y, z≦

1.

2. The semiconductor light-emitting device according to claim 1, wherein said first bonding layer is inclined by 7 to 16°

from the (−

100) face of said first substrate toward the [0-1-1] direction, and the planar direction of the crystal of said second bonding layer is coincident with the planar direction of the crystal of the first bonding layer.

3. The semiconductor light-emitting device according to claim 1, wherein each of said first and second bonding layers has an impurity concentration falling within a range of between 1×

10¹⁸ cm<sup>−

3</sup> and 1×

10¹⁹ cm<sup>−

3</sup>.

4. The semiconductor light-emitting device according to claim 1, further comprising:

a current diffusion layer of a second conductivity type provided on said second cladding layer and consisting essentially of a material represented by a general formula In_xGa_yAl_zP, where x+y+z=1, and 0=x, y, z≦

1; and

a current blocking layer provided on said current diffusion layer and consisting essentially of a material represented by a general formula In_xGa_yAl_zP, where x+y+z=1, and 0≦

x, y, z≦

1.

7. The semiconductor light-emitting device according to any one of claims 1 to 6, wherein said active layer is of multiple quantum well structure.

5. A semiconductor light-emitting device, comprising:

a semiconductor substrate consisting essentially of a material of an n-type GaP;

a bonding layer provided on said semiconductor substrate and having an n-type conductivity;

a light-emitting layer including a second cladding layer, an active layer and a first cladding layer, which are successively provided on said bonding layer, said first and second cladding layers having an p-type and a n-type conductivity, respectively, and each of said active layer and said first and second cladding layers consisting essentially of a material represented by a general formula In_xGa_yAl_zP, and 0≦

x, y, z≦

1; and

a current diffusion layer provided on said second cladding layer, having a p-type conductivity, and consisting essentially of a material selected from the group consisting of InGaAlP and GaAlAs.

6. The semiconductor light-emitting device according to claim 5, further comprising:

an electrode provided on said current diffusion layer; and

a conductive electrode layer arranged on said electrode, said electrode layer being arranged on a conductive mount layer, and said electrode layer and said mount layer being made eutectic.

8. A method of manufacturing a semiconductor light-emitting device, comprising:

forming a first semiconductor layer including formation of a buffer layer of a second conductivity type on a second substrate of the second conductivity type, formation of a current diffusion layer of the second conductivity type on said buffer layer, formation of a second cladding layer of the second conductivity type on said current diffusion layer, formation of an active layer on said second cladding layer, formation of a first cladding layer of a first conductivity type on said active layer, and formation of a second bonding layer of the first conductivity type on said first cladding layer, each of said second substrate and said buffer layer consisting essentially of a GaAs material, each of said current diffusion layer, said active layer and said first and second cladding layers consisting essentially of a material represented by a general formula In_xGa_yAl_zP, where x+y+z=1, and 0≦

x, y, z≦

1, and said second bonding layer consisting essentially of an InGaP material;

forming a second semiconductor layer including formation of a first bonding layer of the first conductivity type on a first substrate of the first conductivity type, each of said first substrate and said first bonding layer consisting essentially of a GaP material;

bonding said first semiconductor layer to said second semiconductor layer with said first bonding layer and said second bonding layer forming a bonding interface; and

removing said second substrate and buffer layer.

9. The method of manufacturing a semiconductor light-emitting device according to claim 8, wherein the planar direction of said second substrate is inclined by 7 to 16°

from the (100) face toward the [011] direction and, and the planar direction of said first substrate is inclined by 7 to 16°

from the (−

100) face toward the [0-1-1] direction.

10. The method of manufacturing a semiconductor light-emitting device according to claim 8, wherein each of said first and second bonding layers has an impurity concentration falling within a range of between 1×

10¹⁸ cm<sup>−

3</sup> and 1×

10¹⁹ cm<sup>−

3</sup>.

11. The method of manufacturing a semiconductor light-emitting device according to claim 8, wherein formation of said first semiconductor layer further comprises forming a current blocking layer on said buffer layer before formation of said current diffusion layer, and said current blocking layer consisting essentially of a material represented by a general formula In_xGa_yAl_zP, where x+y+z=1, and 0≦

x, y, z≦

1.

13. The method of manufacturing a semiconductor light-emitting device according to claim 12, further comprising:

removing said contact layer after removal of said semiconductor substrate and said etching stopper layer;

forming an electrode on said current diffusion layer;

forming a conductive electrode layer on said electrode;

arranging said electrode layer on a conductive mount layer; and

converting said electrode layer and said mount layer into a eutectic structure.

14. The method of manufacturing a semiconductor light-emitting device according to claim 12, wherein said semiconductor layer is bonded to said bonding layer.

15. The method of manufacturing a semiconductor light-emitting device according to claim 12, wherein said semiconductor layer is formed by crystal growth on said bonding layer.

16. The method of manufacturing a semiconductor light-emitting device according to any one of claims 8 to 15, wherein said active layer is of a multiple quantum well structure.

12. A method of manufacturing a semiconductor light-emitting device, comprising:

forming a p-type etching stopper layer on an n-type semiconductor substrate consisting essentially of a GaAs, said etching stopper layer consisting essentially of a material represented by a general formula In_xGa_yAl_zP, where x+y+z=1, and 1≦

x, y, z≦

1;

forming a p-type contact layer on said etching stopper layer, said contact layer consisting essentially of GaAs;

forming a p-type current diffusion layer on said contact layer, said current diffusion layer consisting essentially of a material selected from the group consisting of InGaAlP and GaAlAs;

forming a p-type first cladding layer on said current diffusion layer, said first cladding layer consisting essentially of a material represented by a general formula In_xGa_yAl_zP, where x+y+z=1, and 0≦

x, y, z≦

1;

forming an active layer on said first cladding layer, said active layer consisting essentially of a material represented by a general formula In_xGa_yAl_zP, where x+y+z=1, and 0≦

x, y, z≦

1;

forming an n-type second cladding layer on said active layer, said second cladding layer consisting essentially of a material represented by a general formula In_xGa_yAl_zP, where x+y+z=1, and 0≦

x, y, z≦

1;

forming an n-type bonding layer on said second cladding layer said bonding layer consisting essentially of a material represented by a general formula In_xGa_yAl_zP, where x+y+z=1, and 0≦

x, y, z≦

1;

forming an n-type semiconductor layer on said bonding layer, said semiconductor layer consisting essentially of a GaP material; and

removing said semiconductor substrate and said etching stopper layer.