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Metal oxide semiconductor heterostructure field effect transistor

  • US 20020052076A1
  • Filed: 09/27/2001
  • Published: 05/02/2002
  • Est. Priority Date: 09/27/2000
  • Status: Active Grant
First Claim
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1. A method of producing nitride based heterostructure devices comprising the steps of:

  • providing a substrate;

    applying a first layer over the substrate wherein the first layer includes nitrogen; and

    applying a dielectric layer over the first layer wherein the dielectric layer includes silicon dioxide.

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