Metal oxide semiconductor heterostructure field effect transistor

• US 20020052076A1
• Filed: 09/27/2001
• Published: 05/02/2002
• Est. Priority Date: 09/27/2000
• Status: Active Grant

• Current Assignee: Sensor Electronic Technology Incorporated (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Sensor Electronic Technology Incorporated (Seoul Semiconductor Co., Ltd.)
• Inventors: Gaska, Remigilus, Shur, Michael, Yang, Jinwei, Khan, Muhammad Asif
• Granted Patent: US 6,690,042 B2
• Time in Patent Office: Days
• US Class Current: 438/235
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/7787 with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence

Abstract

A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.

Claims

1. A method of producing nitride based heterostructure devices comprising the steps of:

providing a substrate;

applying a first layer over the substrate wherein the first layer includes nitrogen; and

applying a dielectric layer over the first layer wherein the dielectric layer includes silicon dioxide.

2. The method of claim 1, wherein the substrate includes one of the group comprising sapphire, silicon carbide, a spinel substrate and silicon.

3. The method of claim 1, wherein the first layer further includes a binary compound including one element of the group comprising group III elements.

4. The method of claim 1, wherein the first layer further includes a ternary compound including two elements of the group comprising group III elements.

5. The method of claim 1, wherein the first layer further includes a quaternary compound including three elements of the group comprising group III elements.

6. The method of claim 1, further comprising applying a second layer between the first layer and the dielectric layer wherein the second layer includes nitrogen.

7. The method of claim 6, wherein the first layer further includes a binary compound including one element of the group comprising group III elements and the second layer further includes a ternary compound including two elements of the group comprising group III elements.

8. The method of claim 6, wherein the first layer further includes a ternary compound including two elements of the group comprising group III elements and the second layer further includes a quaternary compound including three elements of the group comprising group III elements.

9. The method of claim 1, further comprising:

applying a first and a second ohmic contact to the first layer; and

applying a gate contact to the dielectric layer.

10. A method of producing nitride based heterostructure devices comprising the steps of:

providing a substrate;

applying a first layer over the substrate wherein the first layer includes gallium and nitrogen; and

applying a dielectric layer over the first layer wherein the dielectric layer includes silicon dioxide.

11. The method of claim 10, wherein the substrate includes one of the group comprising of sapphire, silicon carbide, a spinel substrate and silicon.

12. The method of claim 10, further comprising applying a second layer between the first layer and the dielectric layer wherein the second layer includes aluminum, gallium and nitrogen.

13. The method of claim 12, wherein the substrate includes one of the group comprising sapphire, silicon carbide, a spinel substrate and silicon.

14. The method of claim 12, wherein the first layer further includes aluminum and the second layer further includes indium.

16. The device of claim 15, wherein the substrate includes one of the group comprising sapphire, silicon carbide, a spinel substrate and silicon.

17. The device of claim 15, wherein the first layer further includes gallium.

18. The device of claim 15, further comprising a second layer positioned between the first layer and the dielectric layer wherein the second layer includes nitrogen.

19. The device of claim 18, wherein the second layer further includes aluminum and gallium.

20. The device of claim 18, wherein the second layer further includes indium.

21. The device of claim 18, wherein a composition of the first layer changes over distance and a composition of the second layer changes over distance.

22. The device of claim 18, wherein a composition of the first layer remains substantially constant over distance and a composition of the second layer remains substantially constant over distance.

23. The device of claim 15, wherein the device is used as one of the group comprising a photodetector, a field effect transistor, a gated bipolar junction transistor, a gated hot electron transistor, a gated heterostructure bipolar junction transistor, a gas sensor, a liquid sensor, a pressure sensor, a multi function sensor of pressure and temperature, a power switching device and a microwave device.

15. A nitride based heterostructure device comprising:

a substrate;

a first layer over the substrate wherein the first layer includes nitrogen; and

a dielectric layer over the first layer wherein the dielectric layer includes silicon dioxide.