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Magnetic tunnel junction device and method including a tunneling barrier layer formed by oxidations of metallic alloys

  • US 20020054462A1
  • Filed: 07/13/2001
  • Published: 05/09/2002
  • Est. Priority Date: 11/09/2000
  • Status: Active Grant
First Claim
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1. A magnetic tunnel junction device comprising:

  • a first electrode comprising a fixed ferromagnetic layer having a magnetization fixed in a particular direction in the presence of an applied magnetic field; and

    a second electrode comprising a free ferromagnetic layer having a magnetization that is free to rotate in the presence of an applied magnetic field; and

    a tunnel barrier layer, sandwiched between said fixed ferromagnetic layer and said free ferromagnetic layer, for permitting tunneling current to flow in a direction generally perpendicular to the fixed and free ferromagnetic layers, the tunnel barrier layer including an oxidized thin metallic alloy layer of Ni and another non-magnetic material.

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