Nitride semiconductor light emitting device and apparatus including the same

• US 20020056846A1
• Filed: 09/11/2001
• Published: 05/16/2002
• Est. Priority Date: 11/13/2000
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Ito, Shigetoshi, Taneya, Mototaka, Yuasa, Takayuki, Tsuda, Yuhzoh
• Granted Patent: US 6,452,216 B1
• Time in Patent Office: Days
• US Class Current: 257/86
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 5/0021 Degradation or life time measurements
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/3203 on non-planar substrates to create thickness or compositional variations
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A nitride semiconductor light emitting device includes a worked substrate including grooves and lands formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer covering the grooves and the lands of the worked substrate and a nitride semiconductor multilayer emission structure including an emission layer including a quantum well layer or both a quantum well layer and a barrier layer in contact with the quantum well layer between an n-type layer and a p-type layer over the nitride semiconductor underlayer, while the width of the grooves is within the range of 11 to 30 μm and the width of the lands is within the range of 1 to 20 μm.

Claims

1. A nitride semiconductor light emitting device comprising:

a worked substrate including grooves and lands formed on a main surface of a nitride semiconductor substrate;

a nitride semiconductor underlayer covering said grooves and said lands of said worked substrate; and

a nitride semiconductor multilayer emission structure including an emission layer including a quantum well layer or both a quantum well layer and a barrier layer in contact with said quantum well layer between an n-type layer and a p-type layer over said nitride semiconductor underlayer, wherein

width of said grooves is within the range of 11 to 30 μ

m, and

width of said lands is within the range of 1 to 20 μ

m.

2. The nitride semiconductor light emitting device according to claim 1, wherein the width of said grooves is larger than the width of said lands.

3. The nitride semiconductor light emitting device according to claim 1, wherein depth of said grooves is within the range of 1 to 10 μ

m.

4. The nitride semiconductor light emitting device according to claim 1, wherein the longitudinal direction of said grooves or the longitudinal direction of said lands is substantially parallel to a <

1-100>

direction of a crystal of said substrate.

5. The nitride semiconductor light emitting device according to claim 1, wherein the longitudinal direction of said grooves or the longitudinal direction of said lands is substantially parallel to a <

11-20>

direction of a crystal of said substrate.

6. The nitride semiconductor light emitting device according to claim 1, wherein said nitride semiconductor underlayer contains Al.

7. The nitride semiconductor light emitting device according to claim 1, wherein said nitride semiconductor underlayer contains In_xGa_1-xN (0.01≦

x≦

0.18).

8. The nitride semiconductor light emitting device according to claim 1, wherein said quantum well layer contains at least any of As, P and Sb.

9. The nitride semiconductor light emitting device according to claim 1, wherein said nitride semiconductor light emitting device is either a laser device or a diode device.

10. An optical apparatus comprising the nitride semiconductor light emitting device according to claim 1.

11. A semiconductor light emitting apparatus comprising the nitride semiconductor light emitting device according to claim 1.