Semiconductor light-emitting element

• US 20020056847A1
• Filed: 11/16/2001
• Published: 05/16/2002
• Est. Priority Date: 06/28/1999
• Status: Abandoned Application

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Uemura, Toshiya, Oshio, Takahide
• Application Number:
  US09/988,060
• Publication Number:
  US 20020056847A1
• Time in Patent Office: Days
• US Class Current: 257/89
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A device and a method for fabricating said device provides a semiconductor light-emitting element having an electrode and a protective film layer that is sealed with an insulating resin, which is hardened at high temperature. After completion of the hardening process, the semiconductor light-emitting element is heat treated in an atmosphere of normal or higher humidity. Preferably, the heat treatment is performed at a temperature of 60° C. or higher in an atmosphere having an absolute humidity of 10 KPa or higher. When the heat treatment is performed at or above 10 KPa, the heat treatment can be completed within a shorter timeframe in comparison to such a device heat treated at an absolute humidity of less than 10 kPa.

Claims

1. A semiconductor light-emitting element comprising:

a chip having at least an electrode and a protective film layer;

an insulating resin for sealing said chip;

wherein said insulating resin is hardened at high temperature and heat-treated in an atmosphere having humidity.

2. A semiconductor light-emitting element according to claim 1, wherein the heat treatment is performed at a temperature of 60°

C. or higher.

3. A semiconductor light-emitting element according to claim 1, wherein the atmosphere has an absolute humidity of not less than 10 KPa.

4. A semiconductor light-emitting element according to claim 2, wherein the atmosphere has an absolute humidity of not less than 10 KPa.

5. A semiconductor light-emitting element according to claim 1, wherein the atmosphere has an absolute humidity of not less than 50 KPa.

6. A semiconductor light-emitting element according to claim 2, where the atmosphere has an absolute humidity of not less than 50 KPa.

7. A semiconductor light-emitting element according to claim 1, wherein the heat treatment is performed at a pressure of 1 atm or higher.

8. A semiconductor light-emitting element according to claim 2, wherein the heat treatment is performed at a pressure of 1 atm or higher.

9. A semiconductor light-emitting element according to claim 3, wherein the heat treatment is performed at a pressure of 1 atm or higher.

10. A semiconductor light-emitting element according to claim 4, wherein the heat treatment is performed at a pressure of 1 atm or higher.

11. A semiconductor light-emitting element according to claim 5, wherein the heat treatment is performed at a pressure of 1 atm or higher.

12. A semiconductor light-emitting element according to claim 6, wherein the heat treatment is performed at a pressure of 1 atm or higher.