Copper pad structure

• US 20020056910A1
• Filed: 03/16/2000
• Published: 05/16/2002
• Est. Priority Date: 03/16/2000
• Status: Active Grant

• Current Assignee: Veeco Instruments Incorporated
• Original Assignee: International Business Machines Corporation
• Inventors: Mendelson, Ronald L., Motsiff, William T., Howell, Wayne J.
• Granted Patent: US 6,806,578 B2
• Time in Patent Office: Days
• US Class Current: 257/737
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05546 Dual damascene structure
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13023 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 2924/0001 Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01022 Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01067 : Holmium [Ho]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

A structure (and method) for a metallurgical structure includes a passivation layer, a via through the passivation layer extending to a metal line within the metallurgical structure, a barrier layer lining the via, a metal plug in the via above the barrier layer, the metal plug and the metal line comprising a same material, and a solder bump formed on the metal plug.

Claims

1. A metallurgical structure comprising:

a passivation layer;

a via through said passivation layer extending to a metal line within said metallurgical structure;

a barrier layer lining said via;

a metal plug in said via above said barrier layer, said metal plug and said metal line comprising a same material; and

a solder bump formed on said metal plug.

2. The metallurgical structure in claim 1, wherein said same material comprises copper.

3. The metallurgical structure in claim 1, wherein said barrier layer comprises one or more layers of Ti, TiN, Ta, and TaN.

4. The metallurgical structure in claim 1, wherein said barrier layer and said metal plug prevent elements within said solder bump from diffusing to said metal line.

5. The metallurgical structure in claim 1, wherein said metal plug, said barrier layer and said passivation layer form a planar exterior surface of said metallurgical structure.

6. The metallurgical structure in claim 1, wherein said solder ball is in direct contact with said metal plug.

7. The metallurgical structure in claim 1, further comprising a second barrier layer above said metal plug and a second metal plug above said second barrier layer, said second metal plug being in direct contact with said solder ball.

8. An integrated circuit structure comprising:

internal components within an exterior covering;

a via extending through said exterior covering to said internal components;

a barrier layer lining said via;

a plug in said via above said barrier layer, said plug and said internal components comprising a same material; and

a connector formed on said plug.

9. The integrated circuit structure in claim 8, wherein said same material comprises copper.

10. The integrated circuit structure in claim 8, wherein said barrier layer comprises one or more layers of Ti, TiN, Ta, and TaN.

11. The integrated circuit structure in claim 8, wherein said barrier layer and said plug prevent elements within said connector from diffusing to said components.

12. The integrated circuit structure in claim 8, said plug, said barrier layer and said exterior covering form a planar exterior surface of said integrated circuit structure.

13. The integrated circuit structure in claim 8, wherein said connector is in direct contact with said plug.

14. The integrated circuit structure in claim 8, further comprising a second barrier layer above said plug and a second plug above said second barrier layer, said second plug being in direct contact with said connector.

16. The method in claim 15, wherein said same material comprises copper.

17. The method in claim 15, wherein said barrier layer comprises one or more layers of Ti, TiN, Ta, and TaN.

18. The method in claim 15, wherein said barrier layer prevents elements within said connector from diffusing to said internal components.

19. The method in claim 15, further comprising polishing said integrated circuit structure such that said plug, said barrier layer and said exterior form a planar surface.

20. The method in claim 15, wherein said connector is formed to be in direct contact with said plug.

21. The method in claim 15, further comprising forming a second barrier layer above said plug and forming a second plug above said second barrier layer, such that said second plug is in direct contact with said connector.

15. A method of forming an integrated circuit structure comprising:

forming a via through an exterior of said integrated circuit structure to internal components of said integrated circuit structure;

lining said via with a barrier layer;

forming a plug above said barrier layer, said plug and said internal components comprising a same material; and

forming a connector on said plug.