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Integrated Circuit Devices Having Contact And Container Structures

  • US 20020058380A1
  • Filed: 12/31/2001
  • Published: 05/16/2002
  • Est. Priority Date: 08/31/2000
  • Status: Active Grant
First Claim
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1. A method for forming contact structures and container structures, comprising:

  • providing a semiconductor substrate comprising a first insulative layer formed over the substrate, a second insulative layer formed over the first insulative layer, the first insulative layer having a plurality of first contact structures formed therein, the first contact structures having a first conductivity type;

    forming a third insulative layer over the second insulative layer;

    prior to forming the third insulative layer, separately forming a second contact structure within the second insulative layer and the first insulative layer, the second contact structure having a second conductivity type, different than the first conductivity type; and

    prior to forming the third insulative layer, separately forming a container structure overlying one of the plurality of first contact structures, the container structure electrically contacting the first contact structure.

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