Stiction-free microstructure releasing method for fabricating MEMS device
First Claim
1. A method for releasing a microstructure for fabricating a device of a micro electro mechanical system (MEMS), comprising the steps of;
- supplying alcohol vapor bubbled with anhydrous HF;
maintaining a temperature of the supplying device and a moving path of the anhydrous HF and the alcohol to be higher than a boiling point of the alcohol;
performing a vapor etching by controlling a temperature and a pressure to be within the vapor region of a phase equilibrium diagram of water; and
removing silicon oxide of a sacrificial layer on a lower portion of the microstructure.
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Abstract
Disclosed is a a method of fabricating a MEMS device by means of surface micromachining without leaving any stiction or residues by etching silicon oxide of a sacrificial layer, which is an intermediate layer between a substrate and a microstructure, rather than by etching silicon oxide of a semiconductor device. The method according to the invention includes the steps of supplying alcohol vapor bubbled with anhydrous HF, maintaining a temperature of the supplying device and a moving path of the anhydrous HF and the alcohol to be higher than a boiling point of the alcohol, performing a vapor etching by controlling a temperature and a pressure to be within the vapor region of a phase equilibrium diagram of water, and removing silicon oxide of a sacrificial layer on a lower portion of the microstructure.
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Citations
10 Claims
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1. A method for releasing a microstructure for fabricating a device of a micro electro mechanical system (MEMS), comprising the steps of;
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supplying alcohol vapor bubbled with anhydrous HF;
maintaining a temperature of the supplying device and a moving path of the anhydrous HF and the alcohol to be higher than a boiling point of the alcohol;
performing a vapor etching by controlling a temperature and a pressure to be within the vapor region of a phase equilibrium diagram of water; and
removing silicon oxide of a sacrificial layer on a lower portion of the microstructure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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- 8. A method for removing silicon oxide of a sacrificial layer for a microstructure in a MEMS device, characterized by removing the silicon oxide of a sacrificial layer with a vapor etching using anhydrous HF and alcohol by controlling a temperature and a pressure inside of an etching chamber to be within the region of a vapor of a phase equilibrium diagram of water.
Specification