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Minimally- patterned, thin-film semiconductor devices for display applications

  • US 20020060321A1
  • Filed: 07/12/2001
  • Published: 05/23/2002
  • Est. Priority Date: 07/14/2000
  • Status: Abandoned Application
First Claim
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1. A thin-film transistor array comprising at least first and second transistors, each of the first and second transistors comprising:

  • a shared silicon layer having a thickness less than 40 nm and extending continuously between the first and second transistors;

    a source electrode in direct contact with the silicon layer;

    a drain electrode spaced from the source electrode and in direct contact with the silicon layer; and

    a gate electrode disposed adjacent to the silicon layer.

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