Cleaning method for vapor phase deposition apparatus, and vapor phase deposition apparatus

• US 20020062837A1
• Filed: 10/26/2001
• Published: 05/30/2002
• Est. Priority Date: 10/26/2000
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Morimoto, Masahiro, Shirai, Yoshikatsu, Miyanaga, Mamiko
• Application Number:
  US10/045,746
• Publication Number:
  US 20020062837A1
• Time in Patent Office: Days
• US Class Current: 134/1
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases

Abstract

A cleaning method for a CVD apparatus which forms films on wafers by introducing film forming gas into a chamber by means of a shower head. In this method, the NF₃ gas, which forms the cleaning gas including a compound containing fluorine atoms, is activated by exposure to microwaves by a microwave generating source, and then introduced into the chamber. The temperature of the lid section is raised by heating the lid section by means of a heater plate, or halting supply of cooling water to the lid section from the water supply source, whereby the temperature of the shower head during cleaning is raised above the temperature at which film formation onto the wafer is performed.

Claims

1. A cleaning method for a vapor phase deposition apparatus for forming film onto a substrate by introducing film forming gas into a chamber via a shower head, comprising:

a step of activating a cleaning gas including a compound containing fluorine atoms by exposure to microwaves, and introducing the radicals of said cleaning gas into said chamber; and

a step for raising the temperature of said shower head to a temperature greater than that used when forming film on said substrate.

2. A cleaning method for a vapor phase deposition apparatus according to claim 1, wherein the supply of a cooling medium to said chamber for cooling said shower head is restricted.

3. A cleaning method for a vapor phase deposition apparatus according to claim 2, wherein heat is applied to said shower head by a heater.

4. A cleaning method for a vapor phase deposition apparatus according to claim 1, wherein heat is applied to said shower head by a heater.

5. A cleaning method for a vapor phase deposition apparatus according to claim 1, wherein the temperature of said shower head is raised to 50°

C. or above.

6. A cleaning method for a vapor phase deposition apparatus according to claim 1, wherein said film forming gas includes gas consisting of a compound containing tungsten atoms, and the temperature of said shower head is raised to 70°

C. or above.

7. A vapor phase deposition apparatus comprising:

a chamber comprising a shower head and a circulation passage for passing a cooling medium for cooling said shower head;

a feed passage connected to one end of said circulation passage and leading to said circulation passage, along which said cooling medium travels;

a return passage connected to the other end of said circulation passage and exiting from said circulation passage, along which said cooling medium travels;

a bypass passage connecting said feed passage and said return passage; and

a control valve for controlling the flow of said cooling medium travelling in said bypass passage.

8. A vapor phase deposition apparatus according to claim 7, further comprising a heater for changing the temperature of said shower head.

9. A vapor phase deposition apparatus according to claim 7, further comprising cleaning gas introducing means for activating a cleaning gas by exposure to microwaves, and introducing the radicals of said cleaning gas into said chamber.

10. A vapor phase deposition apparatus according to claim 7, further comprising a gas supply source for supplying gas consisting of a compound containing tungsten atoms into said chamber.

11. A vapor phase deposition apparatus comprising:

a chamber having a shower head for introducing film forming gas; and

a heater for changing the temperature of said shower head.

12. A vapor phase deposition apparatus according to claim 11, further comprising cleaning gas introducing means for activating a cleaning gas by exposure to microwaves, and introducing the radicals of said cleaning gas into said chamber.

13. A vapor phase deposition apparatus according to claim 11, further comprising a gas supply source for supplying a gas consisting of a compound containing tungsten atoms into said chamber.