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Ferroelectric memory device and method of fabricating the same

  • US 20020063271A1
  • Filed: 10/30/2001
  • Published: 05/30/2002
  • Est. Priority Date: 11/21/2000
  • Status: Active Grant
First Claim
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1. A ferroelectric memory device comprising:

  • first and second switching elements formed on a semiconductor substrate;

    an interlayer insulating layer formed on a resulting structure where the first and second switching elements are formed; and

    first and second ferroelectric capacitors having at least three electrode layers, the first and second ferroelectric capacitors being sequentially stacked on the interlayer insulating layer, wherein the first ferroelectric capacitor includes a lower electrode formed on the interlayer insulating layer, a first ferroelectric layer formed on the lower electrode, and a middle electrode formed on the first ferroelectric layer; and

    wherein the second ferroelectric capacitor includes the middle electrode, a second ferroelectric layer formed on the middle electrode, and an upper electrode formed on the second ferroelectric layer.

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