Solid-state imaging device
First Claim
1. A solid-state imaging device, comprising:
- a substrate layer which is composed of a semiconductor of a first conductive type;
a semiconductor layer of said first conductive type which is provided on said substrate layer; and
a photoelectric conversion region of a second conductive type, which is an opposite conductive type of said first conductive type, provided on said semiconductor layer;
wherein impurity concentration of said substrate layer is higher than impurity concentration of said semiconductor layer.
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Abstract
A solid-state imaging device such as a CMOS image sensor includes photodiode portions that are designed for both improving sensitivity and reducing crosstalk of electrical charge to adjacent pixels. A p-type layer, which has an impurity concentration that is lower than that of a substrate p+-layer, is formed on the substrate p+-layer which is a p-type silicon semiconductor substrate of high impurity concentration. An n-type photoelectric conversion region is provided at a position on the upper side of the p-type layer. By means of this configuration, of the photoelectrons that are generated in the p-type layer, electrons that diffuse in the direction of the substrate are reliably captured in substrate p+-layer and annihilated by recombination.
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Citations
10 Claims
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1. A solid-state imaging device, comprising:
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a substrate layer which is composed of a semiconductor of a first conductive type;
a semiconductor layer of said first conductive type which is provided on said substrate layer; and
a photoelectric conversion region of a second conductive type, which is an opposite conductive type of said first conductive type, provided on said semiconductor layer;
wherein impurity concentration of said substrate layer is higher than impurity concentration of said semiconductor layer. - View Dependent Claims (2, 3, 4)
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5. A solid-state imaging device, comprising:
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a substrate layer which is composed of a semiconductor of a first conductive type;
a low-impurity concentration semiconductor layer of said first conductive type which is provided on said substrate layer;
a semiconductor layer of said first conductive type which is provided on said low-impurity concentration semiconductor layer; and
a photoelectric conversion region of a second conductive type, which is an opposite conductive type of said first conductive type, provided on said semiconductor layer;
wherein impurity concentration of said substrate layer is higher than impurity concentration of said semiconductor layer, and impurity concentration of said low-impurity density semiconductor layer is lower than the impurity concentration of said semiconductor layer. - View Dependent Claims (6, 7, 8, 9, 10)
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Specification