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Solid-state imaging device

  • US 20020063302A1
  • Filed: 11/30/2001
  • Published: 05/30/2002
  • Est. Priority Date: 11/30/2000
  • Status: Active Grant
First Claim
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1. A solid-state imaging device, comprising:

  • a substrate layer which is composed of a semiconductor of a first conductive type;

    a semiconductor layer of said first conductive type which is provided on said substrate layer; and

    a photoelectric conversion region of a second conductive type, which is an opposite conductive type of said first conductive type, provided on said semiconductor layer;

    wherein impurity concentration of said substrate layer is higher than impurity concentration of said semiconductor layer.

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