Stacked power amplifier module

• US 20020064029A1
• Filed: 11/29/2000
• Published: 05/30/2002
• Est. Priority Date: 11/29/2000
• Status: Active Grant

• Current Assignee: Nokia Technologies Oy (Nokia Corporation)
• Original Assignee: Nokia Mobile Phones UK Limited (Nokia Corporation)
• Inventors: Pohjonen, Helena
• Granted Patent: US 6,462,950 B1
• Time in Patent Office: Days
• US Class Current: 361/719
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H05K 1/0206 by printed thermal vias
• CPC Class Codes: H05K 1/0207 using internal conductor planes parallel to the surface for thermal conduction, e.g. power planes
• CPC Class Codes: H05K 1/141 One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters H05K1/142 and H05K1/147 take precedence
• CPC Class Codes: H05K 1/16 incorporating printed electric components, e.g. printed resistor, capacitor, inductor
• CPC Class Codes: H05K 2201/0317 Thin film conductor layer; Thin film passive component
• CPC Class Codes: H05K 2201/09563 Metal filled via plated through-hole filled with insulating material H05K2201/0959
• CPC Class Codes: H05K 3/445 having insulated holes or insulated via connections through the metal core
• CPC Class Codes: H05K 3/4641 having integrally laminated metal sheets or special power cores

Abstract

Stacked substrates using passive integration components formed in silicon or stainless steel substrates interconnect with active elements mounted on the surface of the substrate to form a miniaturized power amplification module. Metal filled vias pass through the layers and carry electrical signals to and from the active elements and passive components. The metal filled vias function as thermal transfer heat sinks to transfer heat away from the active elements and the module.

Claims

1. A power amplification module comprising:

at least one thin film passive integrated substrate having formed therein one or more passive components;

at least one active element for amplifying electrical signals;

means for mounting said at least one active element on a surface of said at least one thin film passive integrated substrate;

means for interconnecting said at least one active element to said one more passive components formed in said at least one thin film passive integrated substrate thereby defining a power amplification electrical circuit configuration;

means for connecting input/output electrical signals to and from said integrated passive components and said active elements;

said connecting means further comprising heat sinking means for transferring heat generated by said active element away from said active element and said module for dissipation.

2. A power amplification module as defined in claim 1, wherein said thin film passive integrated substrate comprises a flexible silicon substrate.

3. A power amplification module as defined in claim 1, wherein said thin film passive integrated substrate comprises a flexible stainless steel substrate.

4. A power amplification module as defined in claim 1, wherein said interconnecting means further comprises metal filled via holes through said at least one thin film passive integrated substrate.

5. A power amplification module, as defined in claim 1, wherein said at least one active element comprises an active die.

6. A power amplification module as defined in claim 4 wherein said metal filled via holes include a dielectric material for electrically insulating said metal in said via from said substrates.