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Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects

  • US 20020064592A1
  • Filed: 11/29/2000
  • Published: 05/30/2002
  • Est. Priority Date: 11/29/2000
  • Status: Abandoned Application
First Claim
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1. A method of forming copper interconnect, comprising:

  • forming a trench in a dielectric layer disposed on a substrate, the trench and the dielectric layer having exposed surfaces;

    forming a barrier layer over the exposed surfaces;

    forming a catalytic layer over the barrier layer; and

    performing an electroless deposition of a Cu seed layer over the catalytic layer.

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