Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects

• US 20020064592A1
• Filed: 11/29/2000
• Published: 05/30/2002
• Est. Priority Date: 11/29/2000
• Status: Abandoned Application

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: McGregor, Paul J., Thomas, Christopher D., Datta, Madhav, Dubin, Valery M.
• Application Number:
  US09/728,683
• Publication Number:
  US 20020064592A1
• Time in Patent Office: Days
• US Class Current: 438/618
• CPC Class Codes: C23C 18/30 Activating or accelerating or sensitising with palladium or other noble metal
• CPC Class Codes: C23C 18/40 using reducing agents
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76874 for electroless plating
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 2221/1089 Stacks of seed layers

Abstract

Electroless deposition of Cu provides for repair of copper seed layers formed by vacuum deposition processes, for formation of copper seed layers on catalytic materials, and for bulk fill of damascene trenches and via openings. Electroless plating baths for such depositions are formulated for both room temperature and elevated temperature operation, and each include a copper source, an environmentally friendly reducing agent, a pH buffer, a complexing agent, and a surfactant.

Claims

1. A method of forming copper interconnect, comprising:

forming a trench in a dielectric layer disposed on a substrate, the trench and the dielectric layer having exposed surfaces;

forming a barrier layer over the exposed surfaces;

forming a catalytic layer over the barrier layer; and

performing an electroless deposition of a Cu seed layer over the catalytic layer.

2. The method of claim 1, further comprising performing a Cu bulk fill operation.

3. The method of claim 2, wherein the barrier layer comprises a material selected from the group consisting of Ta, TaN, TaSiN, W, WN, WSiN, Ti, TiN, TiSiN and combinations of these materials.

4. The method of claim 3, wherein the catalytic layer comprises a material selected from the group consisting of Cu, Pd, Pt, Ru, Rh, Au, Ag, Co, and Ni.

5. The method of claim 1, wherein forming the catalytic layer comprises depositing Co.

6. The method of claim 4, wherein the performing an electroless Cu plating operation comprises immersing the substrate into an electroless plating bath comprising a copper source, a reducing agent, a pH buffer, a complexing agent, and a surfactant.

7. The method of claim 6, further comprising the maintaining the electroless plating bath at a temperature between 40°

C. and 90°

C., the reducing agent is selected from the group consisting of formaldehyde, hypophosphite, and glyoxylic acid;

the pH buffer is selected from the group consisting of ammonium hydroxide and trimethylammonium hydroxide;

the complexing agent is selected from the group consisting of ethylenediamine tetra-acetic acid, tartrate salt, and quadrol; and

the surfactant is selected from the group consisting of polyethylene glycol, polypropylene glycol, Triton X-100, and Rhodafac RE 610.

8. The method of claim 6, further comprising the maintaining the electroless plating bath at a temperature between 20°

C. and 30°

C., the reducing agent is selected from the group consisting of formaldehyde, hypophosphite, and glyoxylic acid;

the pH buffer is selected from the group consisting of ammonium hydroxide and trimethylammonium hydroxide;

the complexing agent is selected from the group consisting of ethylenediamine tetra-acetic acid, tartrate salt, and quadrol; and

the surfactant is selected from the group consisting of polyethylene glycol, polypropylene glycol, Triton X-100, and Rhodafac RE 610.

9. The method of claim 7, further comprising removing the excess portion of the bulk copper by chemical mechanical polishing to form individual interconnect lines.

10. The method of claim 8, further comprising removing the excess portion of the bulk copper by chemical mechanical polishing to form individual interconnect lines.

11. A method of repairing a copper seed layer, comprising:

forming a layer on a substrate, the layer being a barrier to the diffusion of copper atoms therethrough;

depositing, over the barrier layer, a copper seed layer by a self-ionizing plasma; and

immersing the substrate in an electroless plating bath;

wherein the electroless plating bath is formed by combining at least CuSO₄·

5H₂O, glyoxylic acid, a pH buffer;

a complexing agent, and polyethylene glycol.

12. The method of claim 11, wherein the pH buffer is selected from the group consisting of potassium hydroxide and tetramethylammonium hydroxide.

13. The method of claim 12, wherein the complexing agent comprises ethylenediamine tetra-acetic acid.

14. The method of claim 11, wherein the pH buffer comprises trimethylammonium hydroxide and the complexing agent comprises a tartrate salt.

15. The method of claim 13, further comprising maintaining the electroless plating bath at approximately 70°

C.

16. The method of claim 14, further comprising maintaining the electroless plating bath at room temperature.

18. The method of claim 17, wherein performing a bulk fill operation comprises immersing the substrate in an electroplating bath and applying a forcing a current.

19. The method of claim 17, wherein performing a bulk fill operation comprises an electroless Cu deposition.

20. The method of claim 19, wherein the electroless Cu deposition is performed in a first plating bath and the first plating bath is also used for repairing the seed layer.

21. The method of claim 19, wherein the electroless Cu deposition is performed in a second plating bath, and the seed layer is repaired in a first plating bath which is different from the second plating bath.

22. The method of claim 21, wherein the catalytic layer comprises Co, and the first plating bath is formed from at least tetramethylammonium hydroxide, glyoxylic acid, and polyethylene glycol.

17. A method of forming a copper interconnect line, comprising:

forming a trench in a dielectric layer disposed on a substrate, the trench and the dielectric layer having exposed surfaces;

forming a barrier layer over the exposed surfaces;

forming a catalytic layer over the barrier layer;

performing an electroless deposition of a Cu seed layer over the catalytic layer; and

performing a bulk fill operation to, at least, fill the trenches.