Preparation method of bis (alkylcyclopentadienyl) ruthenium

• US 20020064948A1
• Filed: 03/13/2001
• Published: 05/30/2002
• Est. Priority Date: 11/08/2000
• Status: Abandoned Application

• Current Assignee: Tanaka Kikinzoku Kogyo Kabushiki Kaisha (Tanaka Holdings Company Limited)
• Original Assignee: Tanaka Kikinzoku Kogyo Kabushiki Kaisha (Tanaka Holdings Company Limited)
• Inventors: Taniuchi, Jun-ichi, Saito, Masayuki
• Application Number:
  US09/804,185
• Publication Number:
  US 20020064948A1
• Time in Patent Office: Days
• US Class Current: 438/681
• CPC Class Codes: C07F 17/02 of metals of Groups 8, 9 or 10 of the Periodic System
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers

Abstract

The present invention is a preparation method of the bis(alkylcyclopentadienyl)ruthenium by reacting a ruthenium compound, an alkylcyclopentadiene and a reducing agent, wherein the ruthenium compound, the alkylcyclopentadiene, and the reducing agent are reacted in the presence of a base. It is preferable that at least one of ammonia, amines, ammonium compounds, hydroxides, aniline, nitroaniline, aminophenol, aminodiphenyl, piperidine, Grignard reagents, alkali metals, alkoxides, phenyl lithium, methyl lithium, n-butyryl lithium, lithium aluminium hydride, and sodium amide is added as a base to the reaction system and the ruthenium compound, the alkylcyclopentadiene, and the reducing agent are reacted.

Claims

1. A preparation method of the bis(alkylcyclopentadienyl)ruthenium represented by Formula 7 by reacting a ruthenium compound, an alkylcyclopentadiene represented by Formula 6, and a reducing agent, wherein the ruthenium compound, the alkylcyclopentadiene, and the reducing agent are reacted in the presence of a base:

2. The preparation method of the bis(alkylcyclopentadienyl)ruthenium according to claim 1, wherein at least one of:

ammonia, amines, ammonium compounds, hydroxides, aniline, nitroaniline, aminophenol, aminodiphenyl, piperidine, Grignard reagents, alkali metals, alkoxides, phenyl lithium, methyl lithium, n-butyryl lithium, lithium aluminium hydride, and sodium amide is added as a base to the reaction system, and the ruthenium compound, the alkylcyclopentadiene, and the reducing agent are reacted.

3. The preparation method of the bis(alkylcyclopentadienyl)ruthenium according to claim 1, wherein at least one of:

hydrogen, alkali metals, alkali earth metals, transition metals, precious metals, sodium boron hydride, dimethylamineborane, trimethylamineborane, hydrazine, hydrazine hydrochloride, cuprous chloride, cuprous iodide, calcium hydride, lithium aluminium hydride, alcohols, formalin, and formic acid is reacted as a reducing agent.

4. The preparation method of the bis(alkylcyclopentadienyl)ruthenium according to claim 2, wherein at least one of:

hydrogen, alkali metals, alkali earth metals, transition metals, precious metals, sodium boron hydride, dimethylamineborane, trimethylamineborane, hydrazine, hydrazine hydrochloride, cuprous chloride, cuprous iodide, calcium hydride, lithium aluminium hydride, alcohols, formalin, and formic acid is reacted as a reducing agent.

5. The preparation method of the bis(alkylcyclopentadienyl)ruthenium according to claim 1, wherein ruthenium chloride, ruthenium nitrate, ruthenium sulfate, or ruthenium acetate is reacted as a ruthenium compound.

6. The preparation method of the bis(alkylcyclopentadienyl)ruthenium according to claim 2, wherein ruthenium chloride, ruthenium nitrate, ruthenium sulfate, or ruthenium acetate is reacted as a ruthenium compound.

7. The preparation method of the bis(alkylcyclopentadienyl)ruthenium according to claim 3, wherein ruthenium chloride, ruthenium nitrate, ruthenium sulfate, or ruthenium acetate is reacted as a ruthenium compound.

8. The preparation method of the bis(alkylcyclopentadienyl)ruthenium according to claim 4, wherein ruthenium chloride, ruthenium nitrate, ruthenium sulfate, or ruthenium acetate is reacted as a ruthenium compound.

9. The bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 1.

10. The bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 2.

11. The bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 3.

12. The bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 4.

13. The bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 5.

14. The bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 6.

15. The bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 7.

16. The bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 8.

17. A preparation method of a ruthenium thin film or a thin film of a ruthenium compound from the bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 1 by CVD method.

18. A preparation method of a ruthenium thin film or a thin film of a ruthenium compound from the bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 2 by CVD method.

19. A preparation method of a ruthenium thin film or a thin film of a ruthenium compound from the bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 3 by CVD method.

20. A preparation method of a ruthenium thin film or a thin film of a ruthenium compound from the bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 4 by CVD method.

21. A preparation method of a ruthenium thin film or a thin film of a ruthenium compound from the bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 5 by CVD method.

22. A preparation method of a ruthenium thin film or a thin film of a ruthenium compound from the bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 6 by CVD method.

23. A preparation method of a ruthenium thin film or a thin film of a ruthenium compound from the bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 7 by CVD method.

24. A preparation method of a ruthenium thin film or a thin film of a ruthenium compound from the bis(alkylcyclopentadienyl)ruthenium prepared by the method according to claim 8 by CVD method.