Exposure method

• US 20020064958A1
• Filed: 10/18/2001
• Published: 05/30/2002
• Est. Priority Date: 10/19/2000
• Status: Abandoned Application

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Takeuchi, Koichi
• Application Number:
  US09/982,433
• Publication Number:
  US 20020064958A1
• Time in Patent Office: Days
• US Class Current: 438/695
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: H01L 21/76816 Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00

Abstract

The invention provides a pattern forming method in which a minute resist pattern can be formed with uniform dimension accuracy in the plane of a substrate, while manufacturing costs and processing time are not increased. In a pattern forming method in which after a first resist pattern containing a photo-acid generating agent is formed on a substrate by a lithography method, a resist film containing a cross-linking agent, which reacts with acid, is coated on the substrate in a state where it covers the first resist pattern, a crosslinking reaction is made to occur at an interface between the first resist pattern and the resist film to grow a cross-linked layer, and a second resist pattern made of the cross-linked layer and the first resist pattern is formed, a step of irradiating the first resist pattern with light is carried out before the resist film is coated on the substrate.

Claims

1. A pattern forming method, comprising the steps of:

forming a first resist pattern containing a photo-acid generating agent on a substrate;

irradiating light to an exposed surface of the first resist pattern;

coating a resist film containing a cross-linking agent, which reacts with acid, on the substrate after irradiation of the light in a state where it covers the first resist pattern;

causing a cross-linking reaction at an interface between the first resist pattern and the resist film to grow a cross-linked layer; and

forming a second resist pattern made of the cross-linked layer and the first resist pattern.

2. A pattern forming method according to claim 1, wherein the light is one selected from the group consisting of ArF excimer laser light and KrF excimer laser light.

3. A pattern forming method according to claim 1, wherein a base resin of a resist material forming the first resist pattern containing the photo-acid generating agent is one selected from the group consisting of methacrylic resin and cycloolefin resin.

4. A pattern forming method according to claim 1, wherein a base resin of the resist film containing the cross-linking agent, which reacts with the acid, is one selected from the group consisting of polyvinyl alcohol system resin, polyacrylic acid system resin, and polyvinyl acetal system resin.