Free-standing (Al, Ga, In)N and parting method for forming same

• US 20020068201A1
• Filed: 09/05/2001
• Published: 06/06/2002
• Est. Priority Date: 01/27/1994
• Status: Active Grant

• Current Assignee: Wolfspeed, Inc.
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Brandes, George R., Vaudo, Robert P., Tischler, Michael A., Kelly, Michael K.
• Granted Patent: US 6,958,093 B2
• Time in Patent Office: Days
• US Class Current: 428/704
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: C30B 33/00 After-treatment of single crystals or homogeneous polycrystalline material with defined structure C30B31/00 takes precedence
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02439 Materials
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: Y10S 117/913 Graphoepitaxy or surface modification to enhance epitaxy
• CPC Class Codes: Y10S 117/915 Separating from substrate

Abstract

A method of forming a free-standing (Al, Ga, In)N article, by the steps including: providing an expitaxially compatible sacrificial template; depositing single crystal (Al, Ga, In)N material on the template to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material; and interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article. The free-standing (Al, Ga, In)N article produced by such method is of superior morphological character, and suitable for use as a substrate, e.g., for fabrication of microelectronic and/or optoelectronic devices and device precursor structures.

Claims

1. A method of forming a free-standing (Al, Ga, In)N article, by the steps comprising:

providing an expitaxially compatible sacrificial template;

depositing single crystal (Al, Ga, In)N material on the template to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material; and

interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article.

2. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises localizing energy at the interface.

3. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises heating the interface to a temperature that activates or induces physical or chemical change.

4. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises cooling the interface to a temperature below the growth temperature.

5. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises energetically modifying the interface.

6. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises energetically exciting the interface.

7. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises providing an interlayer at the interface.

8. The method of claim 7, wherein the interlayer is doped with a dopant.

9. The method of claim 8, wherein the dopant includes at least one dopant species selected from the group consisting of Si, Ge, O, Mg, Be, and/or Zn.

10. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises generating gas at the interface.

11. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises decomposing interfacial material.

12. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging acoustic energy on the interface.

13. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging on the interface an impingement medium selected from the group consisting of protons, electrons, ions, and particle beams.

14. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging a laser beam on the interface.

15. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises rf coupling to a conductive interface.

16. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises etching of the interface.

17. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises selective weakening of interfacial material.

18. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises photodegradation of interfacial material.

19. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises a process selected from the group consisting of photonic, acoustic, physical, chemical, thermal and energetic processes.

20. The method of claim 1, wherein the step of depositing single crystal (Al, Ga, In)N material on the template comprises hydride vapor phase epitaxy (HVPE).

21. The method of claim 1, wherein the step of depositing single crystal (Al, Ga, In)N material on the template comprises metalorganic vapor phase epitaxy (MOVPE).

22. The method of claim 1, wherein the step of depositing single crystal (Al, Ga, In)N material on the template comprises chemical vapor deposition (CVD).

23. The method of claim 1, wherein the step of depositing single crystal (Al, Ga, In)N material on the template comprises molecular beam epitaxy (MBE).

24. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article is carried out at temperature that is within 500°

C. of temperature at which the step of depositing single crystal (Al, Ga, In)N material on the template is carried out.

25. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, in)N article is carried out at temperature that is within 300°

C. of temperature at which the step of depositing single crystal (Al, Ga, In)N material on the template is carried out.

26. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article is carried out at temperature that is within 200°

C. of temperature at which the step of depositing single crystal (Al, Ga, In)N material on the template is carried out.

27. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article is carried out at a temperature that is within 150°

C. of a temperature at which the step of depositing single crystal (Al, Ga, In)N material on the template is carried out.

28. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article is carried out at a temperature that is within 100°

C. of a temperature at which the step of depositing single crystal (Al, Ga, In)N material on the template is carried out. (same as claim 26, did you mean 200 C for claim 26?).

29. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article is carried out at substantially the same temperature at which the step of depositing single crystal (Al, Ga, In)N material on the template is carried out.

30. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface from a Nd:

YAG laser at a wavelength in the vicinity of 355 nm.

31. The method of claim 1, wherein the composite sacrificial template/(Al, Ga, In)N article has a parting threshold of greater than 100 mJ/cm² at 1000°

C.

32. The method of claim 1, wherein the sacrificial template is formed of sapphire.

33. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and said laser energy has a photon energy that is greater than the bandgap of one of the (Al,Ga,In)N and sacrificial template materials, and less than the bandgap of the other material.

34. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and said laser energy has a power density that is sufficiently high to induce chemical and/or physical change of interfacial material, so as to at least weaken interfacial adhesion of the respective template and (Al, Ga, In)N materials.

35. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and said laser energy is pulsed.

36. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and said laser energy has a substantially Gaussian beam profile.

37. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and said laser energy has a substantially Top Hat beam profile.

38. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and said laser energy has a uniform, cylindrically symmetric transition from high (beam center) to low (beam edge) energy.

39. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and said laser energy has a uniform, cylindrically symmetric and gradual transition from high (beam center) to low (beam edge) energy.

40. The method of claim 1, wherein the sacrificial template has a roughened quartz or matte finish at its backside.

41. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and the laser energy is impinged in a predetermined scan pattern involving translational movement of a laser beam and/or the composite sacrificial template/(Al, Ga, In)N article.

42. The method of claim 41, wherein the translational movement includes a rastering movement.

43. The method of claim 41, wherein the translational movement includes a concentrically inward perimeter movement.

44. The method of claim 41, wherein the translational movement includes a pulsed step movement, wherein the step size between successive laser pulses is from about 1 to about 200% of a spot size of the laser beam above the parting threshold.

45. The method of claim 41, wherein the translational movement includes a pulsed step movement, wherein the step size between successive laser pulses is from about 10 to about 50% of a spot size of the laser beam above the parting threshold.

46. The method of claim 41, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and the laser energy is impinged in a predetermined scan pattern, wherein the scan pattern is selected from the group consisting of patterns along (Al,Ga,In)N crystal planes, and patterns along low index (Al,Ga,In)N crystal planes selected from the group consisting of a-planes, m-planes, r-planes, and c-planes.

47. The method of claim 41, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and the laser energy is impinged in a predetermined scan pattern along (Al,Ga,In)N crystal planes, wherein the (Al,Ga,In)N material comprises c-plane GaN and the sacrificial template comprises c-plane sapphire, and the scan pattern comprises scanning along a <

11{overscore (2)}0>

plane of the GaN.

48. The method of claim 1, wherein the interface comprises patterned interfacial material.

49. The method of claim 1, wherein the interface comprises a patterned interlayer.

50. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and the laser energy is impinged in a predetermined scan pattern forming gas egress passages at the interface.

51. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and the laser energy is transmitted through the sacrificial template to the interface.

52. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and the laser energy is transmitted through the (Al, Ga, In)N to the interface.

53. The method of claim 1, wherein the template is shielded by a cover plate during the step of depositing single crystal (Al, Ga, In)N material on the template.

54. The method of claim 1, wherein the composite sacrificial template/(Al, Ga, In)N article is sealed on its backside with a glass which softens during the step of depositing single crystal (Al, Ga, In)N material on the template.

55. The method of claim 1, wherein the composite sacrificial template/(Al, Ga, In)N article is sealed on its backside with a SiO₂ material during the step of depositing single crystal (Al, Ga, In)N material on the template.

56. The method of claim 1, wherein the composite sacrificial template/(Al, Ga, In)N article is sealed on its backside with a Si₂N₃ material during the step of depositing single crystal (Al, Ga, In)N material on the template.

57. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, is carried out in a process environment to which cracked nitrogen is introduced.

58. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, is carried out in a process environment to which HCl is introduced.

59. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, is carried out in a process environment whose pressure is in a range of from about 10⁻

6 to about 10¹⁰ Torr.

60. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises impinging laser energy on the interface, and monitoring reflectance of the laser energy for control of the method.

61. The method of claim 1, wherein at initiation of the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article, the (Al, Ga, In)N material on the sacrificial template has a thickness greater than 50 μ

m.

62. The method of claim 1, wherein at initiation of the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article, the (Al, Ga, In)N material on the sacrificial template has a thickness in a range of from about 100 to about 1000 μ

m.

63. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, comprises partial parting of the sacrificial template from the (Al, Ga, In)N material.

64. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, comprises partial parting of the sacrificial template from the (Al, Ga, In)N material, wherein the unparted area is <

50% of total area of the sacrificial template at the interface, and further comprising completing the parting by a parting completion step selected from the group consisting of (i) cooling the sacrificial template/(Al, Ga, In)N article to ambient temperature to complete the parting of the sacrificial template from the (Al, Ga, In)N material, and (ii) chemical etching to complete the parting.

65. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, comprises grinding, cutting or cleaving along low index crystalline planes.

66. The method of claim 1, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, comprises etching of the interface.

67. The method of claim 1, wherein after the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, the free-standing (Al, Ga, In)N article is cooled to ambient temperature.

68. The method of claim 67, wherein the free-standing (Al, Ga, In)N article is cooled to ambient temperature at a rate of <

20°

C./min.

70. A free-standing article, formed by the method of claim 1.

71. A free-standing article, formed by the method of claim 69.

74. The method of claim 1, wherein the composite sacrificial (Al, Ga, In)N article contains at least one interlayer between the sacrificial template and the (Al, Ga, In)N material.

144. A device comprising or derived from a free-standing (Al, Ga, In)N article produced by the method of claim 1.

148. A free-standing (Al, Ga, In)N wafer derived from a free-standing (Al, Ga, In)N boule article produced by the method of claim 1.

69. A method of forming a free-standing article, including depositing a material of construction for the free-standing article on a substrate, at elevated temperature to form a composite material/substrate article including an interface between the substrate and said material, interfacially modifying the composite material/substrate article to part the substrate from the material and yield the free-standing article at elevated temperature that is (i) within 500°

C. of temperature at which the material of construction is deposited and (ii) above ambient temperature, and cooling the free-standing article to ambient temperature.

72. A composite sacrificial template/(Al, Ga, In)N article, including an interface between the sacrificial template and the (Al, Ga, In)N, wherein the article is at a temperature within 300°

C. of the growth temperature of the (Al, Ga, In)N, and the interface contains absorbed laser energy.

73. A composite sacrificial template/(Al, Ga, In)N article according to claim 72, wherein the absorbed laser energy is at a wavelength on the order of 355 nm.

75. A method of forming a free-standing (Al, Ga, In)N article, by the steps comprising:

providing an expitaxially compatible sacrificial template;

depositing single crystal (Al, Ga, In)N material on the template at elevated temperature, to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material; and

interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to at least partially part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, before the free-standing (Al, Ga, In)N article is cooled to ambient temperature.

76. The method of claim 75, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article comprises a step selected from the group consisting of:

localizing energy at the interface;

heating the interface to a temperature which activates or induces physical or chemical change of interfacial material;

cooling the interface;

cooling the interface and then reheating the interface;

energetically modifying the interface;

energetically exciting the interface;

providing an interlayer at the interface;

doping the interface;

generating gas at the interface;

decomposing interfacial material;

impinging acoustic energy on the interface;

impinging particle beam energy on the interface;

rf coupling to a conductive interface;

etching of the interface;

inducing lateral interfacial cracking, embrittling the interface layer;

selective weakening of interfacial material; and

photodegradation of interfacial material.

77. The method of claim 75, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to at least partially part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, comprises parting at temperature within 500°

C. of said elevated temperature of the step of depositing single crystal (Al, Ga, In)N material on the template.

78. The method of claim 75, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to at least partially part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, comprises parting at temperature within 300°

C. of said elevated temperature of the step of depositing single crystal (Al, Ga, In)N material on the template.

79. The method of claim 75, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to at least partially part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, comprises parting at temperature selected from the group consisting of temperature within 100°

C. of said elevated temperature of the step of depositing single crystal (Al, Ga, In)N material on the template, and temperature substantially the same as said elevated temperature.

80. The method of claim 75, wherein the composite sacrificial template/(Al, Ga, In)N article contains at least one interlayer between the sacrificial template and the (Al, Ga, In)N material, and wherein said at least one interlayer is effective to provide at least one of:

enhanced partability of the sacrificial template from the (Al, Ga, In)N material, reduced bandgap, reduced thermal decomposition temperature, enhanced etchability, and enhanced growth compared to (Al, Ga, In)N material and/or the sacrificial template.

81. The method of claim 75, wherein the step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to at least partially part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, comprises partially parting the sacrificial template from the (Al, Ga, In)N material at elevated temperature, and completing the parting by a parting step selected from the group consisting of (i) fracturing the interface to part the sacrificial template from the (Al, Ga, In)N material on cooling to ambient temperature, and (ii) chemically etching.

82. The method of claim 75, further comprising protecting frontside material of the composite sacrificial template/(Al, Ga, In)N article with ammonia or other N-containing species during said step of interfacially modifying the composite sacrificial template/(Al, Ga, In)N article to at least partially part the sacrificial template from the (Al, Ga, In)N material and yield the freestanding (Al, Ga, In)N article.

146. A device comprising or derived from a free-standing (Al, Ga, In)N article produced by the method of claim 75.

83. A method of forming a free-standing (Al, Ga, In)N article, by the steps comprising:

providing an expitaxially compatible sacrificial template;

depositing single crystal (Al, Ga, In)N material on the template at elevated temperature, to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material; and

impinging laser energy on the interface to at least partially part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, before the free-standing (Al, Ga, In)N article is cooled to ambient temperature.

84. The method of claim 83, comprising parting at temperature within 500°

C. of said elevated temperature of the step of depositing single crystal (Al, Ga, In)N material on the template.

85. The method of claim 83, comprising parting at temperature within 300°

C. of said elevated temperature of the step of depositing single crystal (Al, Ga, In)N material on the template.

86. The method of claim 83, comprising parting at temperature selected from the group consisting of (i) temperature within 100°

C. of said elevated temperature of the step of depositing single crystal (Al, Ga, In)N material on the template and (ii) temperature substantially the same as said elevated temperature of the step of depositing single crystal (Al, Ga, In)N material on the template.

87. The method of claim 83, wherein the composite sacrificial template/(Al, Ga, In)N article contains at least one interlayer between the sacrificial template and the (Al, Ga, In)N material, and wherein said at least one interlayer is effective to provide at least one of:

enhanced partability of the sacrificial template from the (Al, Ga, In)N material, reduced bandgap, reduced thermal decomposition temperature, enhanced etchability, and enhanced growth.

88. The method of claim 83, wherein the composite sacrificial template/(Al, Ga, In)N article contains at least one interlayer between the sacrificial template and the (Al, Ga, In)N material, and wherein said at least one interlayer is effective to provide at least one of:

enhanced energy absorption of the interlayer;

decreased thermal decomposition temperature in the interlayer;

decreased thermal decomposition of the sacrificial template and the (Al, Ga, In)N material;

laser energy conversion of interfacial material to more partable material; and

enhancement of growth of the (Al, Ga, In)N material.

89. The method of claim 83, wherein the composite sacrificial template/(Al, Ga, In)N article contains at least one interlayer between the sacrificial template and the (Al, Ga, In)N material, and wherein said at least one interlayer is in situ deposited.

90. The method of claim 83, wherein the composite sacrificial template/(Al, Ga, In)N article contains at least one interlayer between the sacrificial template and the (Al, Ga, In)N material, and wherein said at least one interlayer is ex situ deposited.

91. The method of claim 83, wherein the step of impinging laser energy on the interface to at least partially part the sacrificial template from the (Al, Ga, In)N material and yield the free-standing (Al, Ga, In)N article, comprises a step selected from the group consisting of:

partially parting the sacrificial template from the (Al, Ga, In)N material at elevated temperature, and a further step selected from the group consisting of (i) fracturing the interface to part the sacrificial template from the (Al, Ga, In)N material on cool down to ambient temperature, and (ii) chemical etching.

92. The method of claim 83, wherein the interface is weakened by subthreshold parting.

93. The method of claim 83, further comprising protecting frontside material of the composite sacrificial template/(Al, Ga, In)N article with ammonia or other N-containing species during parting at elevated temperature.

94. The method of claim 83, further comprising removal of residual (Al, Ga, In) from the free-standing (Al, Ga, In)N article with HCl.

95. The method of claim 83, wherein the free-standing (Al, Ga, In)N article has a thickness of from about 1 to about 1000 μ

m.

96. The method of claim 83, further comprising forming the free-standing (Al, Ga, In)N article into wafers having a thickness of from about 100 to about 1000 μ

m.

97. The method of claim 83, wherein the free-standing (Al, Ga, In)N article is a (Al, Ga, In)N boule having a thickness of from about 1 to about 100 μ

m.

98. The method of claim 83, wherein the free-standing (Al, Ga, In)N article is parted during the depositing step.

99. The method of claim 83, wherein the free-standing (Al, Ga, In)N article is parted after the depositing step.

100. The method of claim 83, wherein the step of impinging laser energy on the interface is carried out in multiple impingements.

101. The method of claim 83, wherein the depositing and impinging laser energy on the interface is carried out followed by additional depositing of single crystal (Al, Ga, In)N material.

102. The method of claim 83, wherein the composite sacrificial template/(Al, Ga, In)N article is transferred to another environment from an environment of the depositing step.

103. The method of claim 83, wherein the composite sacrificial template/(Al, Ga, In)N article is maintained in a similar environment to the depositing step.

104. The method of claim 83, wherein the sacrificial template constitutes a backside template in the composite sacrificial template/(Al, Ga, In)N article and the step of impinging laser energy on the interface is carried out with transmission of laser energy through said backside template.

105. The method of claim 83, wherein the step of impinging laser energy on the interface comprises light mastering.

106. The method of claim 83, wherein the step of impinging laser energy on the interface comprises light scanning from an outside edge of the composite sacrificial template/(Al, Ga, In)N article.

107. The method of claim 83, wherein the sacrificial template is formed of sapphire and the step of impinging laser energy on the interface comprises light rastering along the <

11{overscore (2)}0>

direction of the (Al, Ga, In)N material of the composite sacrificial template/(Al, Ga, In)N article.

108. The method of claim 83, wherein the step of impinging laser energy on the interface comprises light rastering along a direction of a crystal plane of the (Al, Ga, In)N material of the composite sacrificial template/(Al, Ga, In)N article.

109. The method of claim 83, wherein the (Al, Ga, In)N material is GaN and the laser energy is supplied by a Nd:

YAG or an excimer laser.

110. The method of claim 83, wherein backside deposition on the composite sacrificial template/(Al, Ga, In)N article is at least partially suppressed by a step selected from the group consisting of:

use of a cover plate during the depositing step;

softened glass sealing of the sacrificial template;

use of vacuum to fixed position the composite sacrificial template/(Al, Ga, In)N article out of exposure to (Al, Ga, In)N material during said depositing step;

physically fixedly positioning the composite sacrificial template/(Al, Ga, In)N article out of exposure to (Al, Ga, In)N material during said depositing step; and

application of a coating on the sacrificial template that is inhibitive of backside deposits thereon.

111. The method of claim 83, wherein backside deposition on the composite sacrificial template/(Al, Ga, In)N article is at least partially suppressed by application of a coating on the sacrificial template that is inhibitive of backside deposits thereon and transmits laser light, wherein the coating is of a material selected from the group consisting of SiO₂ and Si₃N₄.

112. The method of claim 111, wherein the coating material is removed in situ.

114. The method of claim 113, wherein the step of parting comprises a step selected from the group consisting of:

localizing energy at the interface;

heating the interface to a temperature which activates or induces physical or chemical change of interfacial material;

cooling the interface;

cooling the interface and then reheating the interface;

energetically modifying the interface;

energetically exciting the interface;

providing an interlayer at the interface;

doping the interface;

inducing lateral interfacial cracking;

embrittling the interface layer;

generating gas at the interface;

decomposing interfacial material;

impinging acoustic energy on the interface;

impinging particle beam energy on the interface;

rf coupling to a conductive interface;

etching of the interface;

selective weakening of interfacial material;

photodegradation of interfacial material.

115. The method of claim 113, wherein the step of parting the sacrificial template from the (Al, Ga, In)N material to yield the free-standing (Al, Ga, In)N article, comprises parting at temperature within 500°

C. of said elevated temperature of the step of depositing single crystal (Al, Ga, In)N material on the template.

116. The method of claim 113, wherein the step of parting the sacrificial template from the (Al, Ga, In)N material to yield the free-standing (Al, Ga, In)N article, comprises parting at temperature within 300°

C. of said elevated temperature of the step of depositing single crystal (Al, Ga, In)N material on the template.

117. The method of claim 113, wherein the step of parting the sacrificial template from the (Al, Ga, In)N material to yield the free-standing (Al, Ga, In)N article, comprises parting at temperature within 500°

C. of said elevated temperature of the step of depositing single crystal (Al, Ga, In)N material on the template.

118. The method of claim 113, wherein the composite sacrificial template/(Al, Ga, In)N article contains at least one interlayer between the sacrificial template and the (Al, Ga, In)N material, and wherein said at least one interlayer is effective to provide at least one of:

enhanced partability of the sacrificial template from the (Al, Ga, In)N material, reduced bandgap, reduced thermal decomposition temperature or reduced decomposition of surrounding layers, enhanced etchability, and enhanced growth.

119. The method of claim 113, wherein the composite sacrificial template/(Al, Ga, In)N article contains at least one interlayer between the sacrificial template and the (Al, Ga, In)N material, and wherein said at least one interlayer is in situ deposited.

120. The method of claim 113, wherein the composite sacrificial template/(Al, Ga, In)N article contains at least one interlayer between the sacrificial template and the (Al, Ga, In)N material, and wherein said at least one interlayer is ex situ deposited.

121. The method of claim 113, further comprising protecting frontside material of the composite sacrificial template/(Al, Ga, In)N article with ammonia or other N-containing species during said parting.

123. The method of claim 122, wherein the step of parting the sacrificial template from the (Al, Ga, In)N material to yield the free-standing (Al, Ga, In)N article, comprises parting at temperature within 500°

C. of said elevated temperature of the step of depositing single crystal (Al, Ga, In)N material on the template.

124. The method of claim 122, wherein the step of parting the sacrificial template from the (Al, Ga, In)N material to yield the free-standing (Al, Ga, In)N article, comprises parting at temperature within 300°

C. of said elevated temperature of the step of depositing single crystal (Al, Ga, In)N material on the template.

125. The method of claim 122, wherein the step of parting the sacrificial template from the (Al, Ga, In)N material to yield the free-standing (Al, Ga, In)N article, comprises parting at temperature selected from the group consisting of:

(i) temperature within 100°

C. of said elevated temperature of the step of depositing single crystal (Al, Ga, In)N material on the template, and (ii) said elevated temperature.

126. The method of claim 122, wherein the composite sacrificial template/(Al, Ga, In)N article contains at least one interlayer between the sacrificial template and the (Al, Ga, In)N material, and wherein said at least one interlayer is effective to provide at least one of:

enhanced partability of the sacrificial template from the (Al, Ga, In)N material, reduced thermal decomposition temperature or reduced decomposition of surrounding layers, enhanced convertibility to a more partable composite article, and enhanced growth.

127. The method of claim 122, wherein the composite sacrificial template/(Al, Ga, In)N article contains at least one interlayer between the sacrificial template and the (Al, Ga, In)N material, and wherein said at least one interlayer is in situ deposited.

128. The method of claim 122, wherein the composite sacrificial template/(Al, Ga, In)N article contains at least one interlayer between the sacrificial template and the (Al, Ga, In)N material, and wherein said at least one interlayer is ex situ deposited.

129. The method of claim 122, wherein the parting step comprises partially parting the sacrificial template from the (Al, Ga, In)N material at elevated temperature, and further completing the parting by a step selected from the group consisting of:

(i) fracturing the interface to part the sacrificial template from the (Al, Ga, In)N material during cooldown to room ambient after the partially parting step; and

(ii) parting of the sacrificial template from the (Al, Ga, In)N material at ambient temperature.

130. The method of claim 122, further comprising protecting frontside material of the composite sacrificial template/(Al, Ga, In)N article with ammonia or other N-containing species during said parting.

131. The method of claim 122, further comprising removal of residual (Al, Ga, In) from the free-standing (Al, Ga, In)N article with HCl.

132. The method of claim 122, comprising conducting the depositing and/or parting steps in an inert atmosphere.

133. The method of claim 122, further comprising forming the free-standing (Al, Ga, In)N article having a thickness of from about 0.1 to about 100 mm, into wafers having a thickness of from about 100 to about 1000 μ

m wafers.

134. The method of claim 122, further comprising growing additional (Al, Ga, In)N on the free-standing (Al, Ga, In)N article.

135. The method of claim 122, wherein the sacrificial template is formed of sapphire and the step of parting comprises light rastering along the <

11{overscore (2)}0>

direction of the (Al, Ga, In)N material of the composite sacrificial template/(Al, Ga, In)N article.

136. The method of claim 122, wherein the parting step comprises light rastering along a direction of a low index crystal plane of the (Al, Ga, In)N material of the composite sacrificial template/(Al, Ga, In)N article.

137. The method of claim 122, wherein the (Al, Ga, In)N material is GaN and the laser energy is supplied by a Nd:

YAG or an excimer laser.

138. The method of claim 122, wherein backside deposition on the composite sacrificial template/(Al, Ga, In)N article is at least partially suppressed by a step selected from the group consisting of:

use of a cover plate during the depositing step;

molten glass sealing of the sacrificial template;

use of vacuum to fixed position the composite sacrificial template/(Al, Ga, In)N article out of exposure to (Al, Ga, In)N material during said depositing step;

physically fixedly positioning the composite sacrificial template/(Al, Ga, In)N article out of exposure to (Al, Ga, In)N material during said depositing step; and

application of a coating on the sacrificial template that is inhibitive of backside deposits thereon.

139. The method of claim 122, wherein backside deposition on the composite sacrificial template/(Al, Ga, In)N article is at least partially suppressed by application of a coating on the sacrificial template that is inhibitive of backside deposits thereon, wherein the coating is of a material selected from the group consisting of SiO₂ and Si₃N₄.

140. The method of claim 122, wherein the coating material is removed by etching, wherein the etching further removes laser energy-absorbing deposits.

141. The method of claim 122, wherein edge deposits of energy-absorbing material resulting from the depositing step are removed, including a removing step selected from the group consisting of physical grinding, sawing, cleaving and chemical removal.

145. A device according to claim 143, comprising a microelectronic, optoelectronic, or microelectromechanical device.

147. A device precursor of a device according to claim 143.

113. A method of forming a free-standing (Al, Ga, In)N article, by the steps comprising:

providing an expitaxially compatible sacrificial template;

depositing single crystal (Al, Ga, In)N material on the template at elevated temperature, to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material; and

parting the sacrificial template from the (Al, Ga, In)N material at temperature at or near the elevated temperature of the depositing step to yield the free-standing (Al, Ga, In)N article.

122. A method of forming a free-standing (Al, Ga, In)N article, by the steps comprising:

providing an expitaxially compatible sacrificial template;

depositing single crystal (Al, Ga, In)N material on the template at elevated temperature, to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material; and

parting the sacrificial template from the (Al, Ga, In)N material using impingement of laser energy on the interface at temperature at or near the elevated temperature of the depositing step to yield the free-standing (Al, Ga, In)N article.

142. A method of forming a free-standing (Al, Ga, In)N article, by the steps comprising:

providing an expitaxially compatible sacrificial template;

depositing single crystal (Al, Ga, In)N material on the template by HVPE at elevated temperature, to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material; and

parting the sacrificial template from the (Al, Ga, In)N material using impingement of laser energy on the interface, to yield the free-standing (Al, Ga, In)N article, before cooling to ambient temperature.

143. A method of forming a free-standing (Al, Ga, In)N article, by the steps comprising

providing an expitaxially compatible sacrificial template;

depositing single crystal (Al, Ga, In)N material on the template by HVPE at elevated temperature, to form a composite sacrificial template/(Al, Ga, In)N article including an interface between the sacrificial template and the (Al, Ga, In)N material; and

parting the sacrificial template from the (Al, Ga, In)N material using impingement of laser energy on the interface at a temperature at or near the growth temperature, to yield the free-standing (Al, Ga, In)N article.