Semiconductor device with shielding

• US 20020073780A1
• Filed: 12/20/2001
• Published: 06/20/2002
• Est. Priority Date: 12/20/2000
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Higuchi, Hirofumi, Katsumata, Takashi
• Granted Patent: US 7,096,732 B2
• Time in Patent Office: Days
• US Class Current: 73/514.32
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

Grooves are formed in a semiconductor substrate to provide a inner portion movable in x and y directions, drive electrodes to vibrates the inner portion in x direction, detection electrode for detecting movement in y direction which is generated when an angular velocity is applied thereto, monitor electrodes for generating monitor signals for monitoring the movement in x direction. Shield wires are provided between the drive electrodes and the detection electrodes and the monitor electrodes to suppress the capacitive coupling.

Claims

1. A semiconductor device comprising:

a circuit substrate and a semiconductor substrate fixed with respect to said circuit substrate;

said semiconductor substrate including a fix portion and a movable portion, said movable portion being movable in a predetermined direction with respect to said fix portion, said fix portion including with electrical insulation;

an input electrode for inputting a periodical signal from said circuit substrate to said movable portion to vibrate said movable portion; and

an output electrode for outputting a signal indicative of capacitive variation based on vibration of said movable portion in said predetermined direction toward said circuit substrate;

an input wire for connecting said input electrode to said circuit substrate;

an output wire for connecting said output electrode to said circuit substrate; and

a shield wire connected to a constant potential at said circuit substrate to provide capacitive shielding between said input wire and said output wire.

2. The semiconductor device as claimed in claim 1, wherein a top surface of said semiconductor substrate has a rectangular shape, and said input electrode and said output electrode are arranged at locations corresponding to different sides of said rectangular shape, respectively.

3. The semiconductor device as claimed in claim 1, wherein said shield wire is grounded at said circuit substrate.

4. The semiconductor device as claimed in claim 1, wherein said shield wire is arranged near either of said input electrode or said output electrode.

5. The semiconductor device as claimed in claim 1, wherein said fix portion further includes with electrical insulation, a dummy electrode capacitively coupled to said input electrode near said output electrode for generating a dummy signal and said semiconductor device further comprises a dummy signal wire connected to said dummy electrode and said circuit substrate, said dummy signal including an induced component of said periodical signal and being supplied to said circuit substrate to be used to cancel another component of said periodical signal induced in said signal.

6. The semiconductor device as claimed in claim 1, wherein said movable portion is movable in another predetermined direction with respect to said fix portion, said semiconductor device further comprising angular velocity detection means for detecting vibration of said movable portion in said another direction to determine an angular velocity around an axis perpendicular to said predetermined direction and another predetermined direction to generate said detection signal.

7. A semiconductor device comprising:

a circuit substrate and a semiconductor substrate fixed with respect to said circuit substrate;

said semiconductor substrate including a fix portion and a movable portion, said movable portion being movable in a predetermined direction with respect to said fix portion, said fix portion including with electrical insulation;

an input electrode for inputting a periodical signal from said circuit substrate to said movable portion to vibrate said movable portion;

an output electrode for outputting a signal indicative of capacitive variation based on vibration of said movable portion in said predetermined direction toward said circuit substrate; and

a monitor electrode for monitoring capacitive variation based on vibration of said movable portion in said first predetermined direction and supplying a monitor signal to said circuit substrate;

an input wire for connecting said input electrode to said circuit substrate;

an output wire for connecting said output electrode to said circuit substrate; and

a monitor wire for connecting said monitor electrode to said circuit substrate; and

a shield wire connected to a constant potential at said circuit substrate to provide capacitive shielding between said input wire and said output wire and between said input wire and said monitor wire.

8. The semiconductor device as claimed in claim 7, wherein a top surface of said semiconductor substrate has a rectangular shape, and said input electrode and said output electrode are arranged at locations corresponding to different sides of said rectangular shape, respectively.

9. The semiconductor device as claimed in claim 7, wherein said shield wire is grounded at said circuit substrate.

10. The semiconductor device as claimed in claim 7, wherein said shield wire is arranged near either of said input wire or said output wire.

11. The semiconductor device as claimed in claim 7, wherein said shield wire is arranged near either of said input wire or said monitor wire.

12. The semiconductor device as claimed in claim 7, wherein said fix portion further includes with electrical insulation, a dummy electrode capacitively coupled to said input electrode near said output electrode for generating a dummy signal, and wherein said semiconductor device further comprises a dummy signal wire connected to said dummy electrode and said circuit substrate, said dummy signal including an induced component of said periodical signal and being supplied to said circuit substrate to be used to cancel another component of said periodical signal induced in said signal.

13. A semiconductor device comprising:

a circuit substrate and a semiconductor substrate fixed with respect to said circuit substrate;

said semiconductor substrate including a fix portion, a movable portion, said fix portion being fixed with respect to said circuit substrate and having supporting means for supporting said movable portion with movement in a predetermined direction with respect to said fix portion, said movable portion being electrically connected to a predetermined potential;

capacitive driving means for driving said movable portion, said capacitive driving means including a drive electrode included in said fix portion for inputting a drive signal from said circuit substrate to said movable portion to vibrate said movable portion;

detection means for detecting capacitive variation based on vibration of said movable portion caused by supplying said drive signal to said movable portion, said detection means including a detection electrode included in said fix portion to supply a detection signal to said circuit substrate; and

a shield wire pad arranged between said drive electrode and said signal electrode which is neighbor to said drive electrode;

a drive signal wire for connecting said drive electrode to said circuit substrate;

a detection wire for connecting said detection electrode to said circuit substrate; and

a shield wire connected to said shield wire pad and a constant potential at said circuit substrate to provide capacitive shielding between said drive wire and said detection wire.