High-frequency current suppression body using magnetic loss material exhibiting outstanding complex permeability characteristics

• US 20020074144A1
• Filed: 04/17/2001
• Published: 06/20/2002
• Est. Priority Date: 04/17/2000
• Status: Active Grant

• Current Assignee: Tokin Corporation (Yageo Corporation)
• Original Assignee: NEC Tokin Corporation (Yageo Corporation)
• Inventors: Kamel, Koji, Watanabe, Shinya, Awakura, Yoshio
• Granted Patent: US 6,921,573 B2
• Time in Patent Office: Days
• US Class Current: 174/52.1
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H05K 1/0233 Filters, inductors or a magnetic substance
• CPC Class Codes: H05K 9/0083 comprising electro-conductive non-fibrous particles embedded in an electrically insulating supporting structure, e.g. powder, flakes, whiskers H05K9/0086 takes precedence
• CPC Class Codes: Y10S 428/90 Magnetic feature
• CPC Class Codes: Y10S 428/928 Magnetic property
• CPC Class Codes: Y10T 428/14 Layer or component removable to expose adhesive
• CPC Class Codes: Y10T 428/28 Web or sheet containing structurally defined element or component and having an adhesive outermost layer

Abstract

In order to provide a magnetic loss material exhibiting outstanding high-frequency magnetic loss characteristics extremely effective in eliminating high-frequency transmission noise from very densely integrated electronic microcircuits such as semiconductor integrated circumference devices, together with a manufacturing method therefor and a high-frequency current suppression body wherein such is used, the present invention is a high-frequency current suppression body having a sheet shape comprising an adhesive layer or a pressure-sensitive adhesive layer (23) on at least one surface of a magnetic thin film (19). This magnetic thin film is a magnetic loss material consisting of M—X—Y, where M is at least one of Fe, Co, and Ni, X is at least one element other than M or Y, and Y is at least one of F, N, and O. The maximum value μ″max of the loss factor μ″ of the magnetic loss material exists in a frequency range of 100 MHz to 10 GHz. A relative bandwidth bwr is not greater than 200% where the relative bandwidth bwr is obtained by extracting a frequency bandwidth between two frequencies at which the value of μ″ is 50% of the maximum μ″_max and normalizing the frequency bandwidth at the center frequency thereof.

Claims

1. A high-frequency current suppression body having a sheet shape and comprising an adhesive layer or pressure-sensitive adhesive layer on at least one surface of a magnetic thin film.

2. The high-frequency current suppression body according to claim 1, wherein said magnetic thin film is provided on one surface of a film or sheet-form substrate composed of a synthetic resin.

3. The high-frequency current suppression body according to claim 2, wherein said adhesive layer or pressure-sensitive adhesive layer is provided on one surface of said magnetic thin film with said substrate interposed therebetween.

4. The high-frequency current suppression body according to claim 1, wherein said magnetic thin film is provided on one surface of a film or sheet-form substrate so that said magnetic thin film can be peeled away from said substrate.

5. The high-frequency current suppression body according to claim 1, wherein said magnetic thin film substantially consists of a magnetic loss material having an M—

X—

Y composition, where M is at least one of Fe, Co, and Ni, Y is at least one of F, N, and O, and X is at least one element other than M or Y, and said magnetic loss material is a narrow-band magnetic loss material such that the maximum value μ

″

max of loss factor μ

″

exists within a frequency range of 100 MHz to 10 GHz, said loss factor μ

″

being an imaginary part in complex permeability of said magnetic loss material, and that a relative bandwidth bwr is not greater than 200% where the relative bandwidth bwr is obtained by extracting a frequency bandwidth between two frequencies at which the value of μ

″

is 50% of the maximum μ

″

_max and normalizing the frequency bandwidth at the center frequency thereof.

6. The high-frequency current suppression body according to claim 5, wherein said magnetic loss material has a thickness within a range of 0.3 μ

m to 20 μ

m.

7. The high-frequency current suppression body according to claim 5, wherein size of saturation magnetization of said magnetic loss material is in a range of 80% to 60% of saturation magnetization of metal magnetic body consisting solely of M component.

8. The high-frequency current suppression body according to claim 5, wherein said magnetic loss material exhibits a DC electric resistivity in a range of 100 μ

Ω

·

cm to 700 μ

Ω

·

cm.

9. The high-frequency current suppression body according to claim 5, wherein said X component in said magnetic loss material consists of at least one of C, B, Si, Al, Mg, Ti, Zn, Hf, Sr, Nb, Ta, and rare earth elements.

10. The high-frequency current suppression body according to claim 5, wherein said M component in said magnetic loss material exists in a granular form dispersed in the matrix of said X—

Y compound.

11. The high-frequency current suppression body according to claim 5, wherein mean particle diameter of particle M component having said granular form is in a range of 1 nm to 40 nm.

12. The high-frequency current suppression body according to claim 5, wherein said magnetic loss material exhibits an anisotropic magnetic field Hk of 600 Oe (4.74 ×

10⁴ A/m) or less.

13. The high-frequency current suppression body according to claim 5, wherein said magnetic loss material has a composition represented by general formula Fe_α

—

Al_β

—

O_γ

.

14. The high-frequency current suppression body according to claim 5, wherein said magnetic loss material has a composition represented by general formula Fe_α

—

Si_β

—

O_γ

.

15. The high-frequency current suppression body according to claim 5, wherein said magnetic loss material is a thin-film magnetic body fabricated by a sputtering or vapor deposition method.

16. The high-frequency current suppression body according to claim 1, wherein said magnetic thin film substantially consists of a magnetic loss material having an M—

X—

Y composition, where M is at least one of Fe, Co, and Ni, Y is at least one of F, N, and O, and X is at least one element other than M or Y, and said magnetic loss material is a broadband magnetic loss material such that the maximum value μ

″

max of loss factor μ

″

exists within a frequency range of 100 MHz to 10 GHz, said loss factor μ

″

being imaginary part in complex permeability of said magnetic loss material, and that a relative bandwidth bwr is not smaller than 150% where the relative bandwidth bwr is obtained by extracting a frequency bandwidth between two frequencies at which the value of μ

″

is 50% of the maximum μ

″

_max and normalizing the frequency bandwidth at the center frequency thereof

17. The high-frequency current suppression body according to claim 16, wherein said magnetic loss material has a size of saturation magnetization within a range of 60% to 35% of saturation magnetization of metal magnetic body consisting solely of M component.

18. The high-frequency current suppression body according to claim 16, wherein said magnetic loss material exhibits a DC electric resistivity value larger than 500 μ

Ω

·

cm.

19. A high-frequency current suppression method wherein the high-frequency current suppression body cited in claim 18 is deployed either in tight contact with or in close proximity to an electronic circuit.

20. A high-frequency current suppression body formation method wherein a magnetic thin film formed on one surface of a peelable sheet-form substrate is placed on an object, and, by applying a pressure from said substrate side thereof, the portion of said magnetic thin film where the pressure is applied is transferred to said object.