Method and apparatus for low temperature annealing of metallization micro-structures in the production of a microelectronic device
First Claim
1. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:
- depositing a copper layer into the micro-structures with a process generating copper grains that are sufficiently small so as to substantially fill the recessed microstructures;
subjecting the deposited copper to an annealing process at a temperature below about 100 degrees Celsius.
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Abstract
A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.
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Citations
67 Claims
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1. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:
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depositing a copper layer into the micro-structures with a process generating copper grains that are sufficiently small so as to substantially fill the recessed microstructures;
subjecting the deposited copper to an annealing process at a temperature below about 100 degrees Celsius. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with metallization comprising the steps of:
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depositing a metal layer into the micro-structures with a process generating copper grains that are sufficiently small so as to substantially fill the recessed microstructures;
subjecting the deposited metal to an annealing process at a temperature below about 100 degrees Celsius. - View Dependent Claims (8, 9, 10, 11, 12, 14, 15, 16, 17, 18, 19)
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13. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:
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providing a semiconductor workpiece with a feature that is to be connected with copper metallization;
applying at least one dielectric layer over a surface of the semiconductor workpiece including the feature;
providing recessed micro-structures in the at least one dielectric layer;
preparing a surface of the workpiece including the recessed micro-structures with a seed layer for subsequent electrochemical copper deposition;
electrochemically depositing a copper layer to the surface of the workpiece to substantially fill the recessed micro-structures;
allowing the electrochemically deposited copper layer to self-anneal for a predetermined period of time at ambient room temperature;
removing copper metallization from the surface of the workpiece except from the recessed microstructures, said removing step occurring after the predetermined period of time has elapsed.
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20. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:
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providing a semiconductor workpiece with a feature that is to be connected with copper metallization;
applying at least one dielectric layer over a surface of the semiconductor workpiece including the feature;
providing recessed micro-structures in the at least one dielectric layer;
preparing a surface of the workpiece including the recessed micro-structures with a seed layer for subsequent electrochemical copper deposition;
electrochemically depositing a copper layer to the surface of the workpiece to substantially fill the recessed micro-structures;
removing copper metallization from the surface of the workpiece except from the recessed micro-structures;
allowing the electrochemically deposited copper layer to self-anneal at ambient room temperature without subjecting the workpiece to a separate and distinct elevated temperature annealing process. - View Dependent Claims (21, 22, 23, 24, 25, 27, 28, 29, 30, 31, 32)
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26. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:
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providing a semiconductor workpiece with a feature that is to be connected with copper metallization;
applying at least one dielectric layer over a surface of the semiconductor workpiece including the feature;
providing recessed micro-structures in the at least one dielectric layer;
preparing a surface of the workpiece, including the recessed micro-structures, with a seed layer for subsequent electrochemical copper deposition;
electrochemically depositing a copper layer to the surface of the workpiece to substantially fill the recessed micro-structures;
subjecting the electrochemically deposited copper layer to an annealing process at a temperature below about 100 degrees Celsius.
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33. A method for filling recessed micro-structures at a surface of a semiconductor workpiece with copper metallization comprising the steps of:
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providing a semiconductor workpiece with a feature that is to be connected with copper metallization;
applying at least one low-K dielectric layer over a surface of the semiconductor workpiece including the feature;
providing recessed micro-structures in the at least one low-K dielectric layer;
preparing a surface of the workpiece, including the recessed micro-structures, with a seed layer for subsequent electrochemical copper deposition;
electrochemically depositing a copper layer to the surface of the workpiece to substantially fill the recessed micro-structures;
subjecting the electrochemically deposited copper layer to an annealing process at a temperature below which the low-K dielectric layer substantially degrades. - View Dependent Claims (34, 35, 37, 38, 39)
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36. A method for reducing voids in a metal material that has been electrolytically deposited into recessed micro-structures of a microelectronic workpiece comprising the step of subjecting the workpiece to an annealing process at a temperature that is at or below about 250 degrees Celsius.
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40. A method for reducing voids in a metal material that has been electrolytically deposited into recessed micro-structures of a microelectronic workpiece comprising the step of subjecting the workpiece to an annealing process in which the workpiece is subject to a controlled temperature gradient in which the temperature decreases along a cross-section of the workpiece in a direction that is opposite to the direction of the formation of the deposited metal material.
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41. An apparatus for use in applying metallization in recessed micro-structures of a microelectronic workpiece comprising:
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at least one deposition station for depositing a conductive material into at least the recessed micro-structures of the microelectronic workpiece;
at least one annealing station for subjecting the microelectronic workpiece to an annealing temperature that is at or below about 250 degrees Celsius. - View Dependent Claims (42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54)
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55. An apparatus for use fabricating metallization in recessed micro-structures of a microelectronic workpiece comprising:
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at least one deposition station for depositing a conductive material into at least the recessed micro-structures of the microelectronic workpiece;
at least one annealing station for subjecting the microelectronic workpiece to an annealing process in which the workpiece is subject to a controlled temperature gradient. - View Dependent Claims (56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67)
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Specification