×

Carbon-doped hard mask and method of passivating structures during semiconductor device fabrication

  • US 20020074313A1
  • Filed: 12/19/2000
  • Published: 06/20/2002
  • Est. Priority Date: 12/19/2000
  • Status: Active Grant
First Claim
Patent Images

1. A carbon-doped hard mask for use in etching a substance to form a structure with an etching process during a semiconductor fabrication process, the structure having sidewalls formed during the etching process, the hard mask including:

  • a dielectric material layer containing carbon which is released in sufficient quantities from the dielectric material layer during the etching process to passivate the sidewalls of the structure against lateral etching.

View all claims
  • 10 Assignments
Timeline View
Assignment View
    ×
    ×