Carbon-doped hard mask and method of passivating structures during semiconductor device fabrication
First Claim
1. A carbon-doped hard mask for use in etching a substance to form a structure with an etching process during a semiconductor fabrication process, the structure having sidewalls formed during the etching process, the hard mask including:
- a dielectric material layer containing carbon which is released in sufficient quantities from the dielectric material layer during the etching process to passivate the sidewalls of the structure against lateral etching.
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Accused Products
Abstract
A carbon-doped hard mask includes a dielectric material containing carbon which is released from the hard mask during a metal etching process. The released carbon is deposited on and bonds to sidewalls of the metal structure during the metal etching process to passivate the sidewalls of the metal structure and prevent lateral etching of the sidewalls during the metal etching process. The released carbon also prevents became relation to metal residue in open fields.
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Citations
18 Claims
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1. A carbon-doped hard mask for use in etching a substance to form a structure with an etching process during a semiconductor fabrication process, the structure having sidewalls formed during the etching process, the hard mask including:
a dielectric material layer containing carbon which is released in sufficient quantities from the dielectric material layer during the etching process to passivate the sidewalls of the structure against lateral etching. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of passivating sidewalls of a structure formed under a hard mask from a substance during an etching process in a semiconductor fabrication process, the method including the steps of:
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forming the hard mask on the substance from dielectric material containing carbon;
releasing carbon from the dielectric material during the etching process; and
etching the substance in a vertically downward direction to form the structure while the released carbon protects sidewalls of the structure from lateral etching. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 17, 18)
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16. A method of inhibiting lateral etching of a structure formed in a semiconductor fabrication process by vertically etching a substance to form the structure, comprising the steps of:
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forming a mask on the substance containing a passivating agent which is released from the mask during etching;
etching the substance into the structure using the mask while the passivating agent is released from the mask to passivate sidewalls of the structure from lateral etching as the structure is etched from the substance.
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Specification