Plasma enhanced chemical processing reactor and method
First Claim
1. A plasma enhanced chemical processing reactor, comprising:
- a plasma chamber;
a first gas injection manifold communicating with said plasma chamber for receiving at least one first gas;
a source of electromagnetic energy for exciting said at least one first gas to form a plasma;
a process chamber communicating with the plasma chamber whereby the plasma extends into said process chamber;
a wafer support for supporting a wafer, said wafer support disposed in said process chamber;
a second gas manifold, disposed in said process chamber and encircling said wafer support, for directing reactive gases towards said wafer support whereby the reactive gases interact with the plasma to process the surface of a wafer supported on said wafer support; and
a vacuum system for removing gases from the bottom of said process chamber.
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Abstract
A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber is in communication with a process chamber which includes a wafer support and a second gas manifold. The plasma generated in the plasma chamber extends into the process chamber and interacts with the reactive gases to deposit a layer of material on the wafer. The reactor also includes a vacuum system for exhausting the reactor. The method includes the steps of generating a plasma within the plasma chamber, introducing at least one gaseous chemical into the process chamber proximate to the wafer support and applying r.f. gradient to induce diffusion of the plasma to the area proximate the wafer support.
359 Citations
47 Claims
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1. A plasma enhanced chemical processing reactor, comprising:
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a plasma chamber;
a first gas injection manifold communicating with said plasma chamber for receiving at least one first gas;
a source of electromagnetic energy for exciting said at least one first gas to form a plasma;
a process chamber communicating with the plasma chamber whereby the plasma extends into said process chamber;
a wafer support for supporting a wafer, said wafer support disposed in said process chamber;
a second gas manifold, disposed in said process chamber and encircling said wafer support, for directing reactive gases towards said wafer support whereby the reactive gases interact with the plasma to process the surface of a wafer supported on said wafer support; and
a vacuum system for removing gases from the bottom of said process chamber. - View Dependent Claims (2, 3, 4, 5, 6, 8, 9, 10, 11, 12, 13, 16, 17, 19, 20, 21, 22, 23, 24, 25, 26, 27, 29, 30, 31, 32, 33, 34, 35, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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7. The reactor of clam 1 wherein said second gas manifold includes a plurality of spaced nozzles for distributing gases proximate to said wafer.
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14. A plasma enhanced CVD system, comprising:
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a plasma chamber having a source of electromagnetic energy, said source having a helical resonator and a capacitive shield disposed within said helical resonator for generating a plasma, a process chamber communicating with said plasma chamber whereby the plasma extends into said process chamber, and a support, in said processing chamber, for supporting a wafer for interaction with the plasma extending into the process chamber.
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15. A plasma enhanced CVD system comprising:
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a cylindrical plasma chamber having a source of electromagnetic energy for generating a plasma;
a cylindrical process chamber communicating with said plasma chamber whereby the plasma extends into said process chamber, a support, in said processing chamber, for supporting a wafer for interaction with the plasma extending into said process chamber; and
a vacuum system positioned on the axis of said process chamber for exhausting said process chamber.
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18. A plasma enhanced CVD system, comprising:
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a plasma chamber;
a first gas injection manifold communicating with said plasma chamber for receiving at least one first gas;
a source of electromagnetic energy for exciting said at least one first gas to form a plasma;
a process chamber communicating with the plasma chamber whereby the plasma extends into said process chamber;
a wafer support for supporting a wafer, said wafer support being substantially axially aligned with said process chamber;
a second gas manifold, said second gas manifold being substantially axially aligned with said process chamber and encircling said wafer support, for directing reactive gases towards said wafer support whereby the reactive gases interact with the plasma and deposit a material on the wafer; and
a vacuum system substantially axially aligned with said process chamber for removing gases from said process chamber.
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28. A plasma enhanced chemical processing reactor, comprising:
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a cylindrical plasma chamber;
a first gas injection manifold comnmunicating with said plasma chamber for receiving at least one first gas;
a source of electromagnetic energy having a helical resonator and a capacitive shield disposed within said helical resonator, for exciting said at least one first gas to form a plasma;
a cylindrical process chamber communicating with the plasma chamber whereby the plasma extends into said process chamber;
a wafer support for supporting a wafer, said wafer support disposed on axis within said process chamber and attached to at least one surface of said process chamber such that said wafer support is suspended within said process chamber;
a second gas manifold, disposed on axis within said process chamber and encircling said wafer support, for directing reactive gases towards said wafer support whereby the reactive gases interact with the plasma and deposit a material on the wafer; and
a vacuum system communicating with said process chamber and disposed beneath said wafer support, substantially aligned on axis with said process chamber for removing gases from said process chamber.
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36. The reactor of clam 28 wherein said first gas manifold comprises at least one plenum formed therein for discretely receiving at least one gaseous chemical;
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a plurality of holes communicating with each of said at least one plenum and said holes disposed along said plenum, for discretely distributing said at least one gaseous chemical to said plasma chamber.
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37. A method of operating a plasma enhanced chemical processing reactor, having a plasma chamber and a process chamber, said process chamber including a wafer support for supporting a wafer disposed within said process chamber, comprising the steps of:
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generating a plasma within a plasma chamber, said plasma chamber having a top surface;
referencing the plasma to a first voltage potential along said top surface;
applying r.f. energy to said wafer support thereby creating a second voltage potential, wherein the difference between said first voltage potential. and said second voltage potential induces diffusion of the plasma to the area proximate to said wafer support.
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Specification