Integrated circuits and methods for their fabrication
First Claim
1. An integrated circuit structure comprising:
- a body comprising a semiconductor substrate which has a top surface and a bottom surface, wherein one or more through holes pass through the substrate between the top and bottom surfaces, the body comprising one or more circuit elements formed in and/or over the top surface of the semiconductor substrate;
a conductor formed in each through hole and protruding from the bottom surface of the semiconductor substrate, the conductor in each through hole being coupled to one or more of the circuit elements;
a dielectric separating the conductor in each through hole from the semiconductor substrate, wherein at each through hole the dielectric forms a protrusion on the bottom of the body around the conductor;
wherein at each through hole the conductor protrudes from the dielectric on the bottom of the body, the conductor thus having a protruding outer surface not covered by the dielectric, wherein at least a portion of the protruding outer surface is either vertical or sloped outwards (laterally away from the through hole) when the surface is traced down.
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Accused Products
Abstract
To fabricate contacts on a wafer backside, openings (124) are formed in the face side of the wafer (104). A dielectric layer (140) and some contact material (150), e.g. metal, are deposited into the openings. Then the backside is etched until the contacts (150C) are exposed and protrude out. The protruding portion of each contact has an outer sidewall (150V). At least a portion of the sidewall is vertical or sloped outwards with respect to the opening when the contact is traced down. The contact is soldered to an another structure (410), e.g. a die or a PCB. The solder (420) reaches and at least partially covers the sidewall portion which is vertical or sloped outwards. The strength of the solder bond is improved as a result. The dielectric layer protrudes around each contact. The protruding portion (140P) of the dielectric becomes gradually thinner around each contact in the downward direction. The thinned dielectric is more flexible, and is less likely detach from the contact when the contact is pulled sideways. Other embodiments are also described.
160 Citations
27 Claims
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1. An integrated circuit structure comprising:
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a body comprising a semiconductor substrate which has a top surface and a bottom surface, wherein one or more through holes pass through the substrate between the top and bottom surfaces, the body comprising one or more circuit elements formed in and/or over the top surface of the semiconductor substrate;
a conductor formed in each through hole and protruding from the bottom surface of the semiconductor substrate, the conductor in each through hole being coupled to one or more of the circuit elements;
a dielectric separating the conductor in each through hole from the semiconductor substrate, wherein at each through hole the dielectric forms a protrusion on the bottom of the body around the conductor;
wherein at each through hole the conductor protrudes from the dielectric on the bottom of the body, the conductor thus having a protruding outer surface not covered by the dielectric, wherein at least a portion of the protruding outer surface is either vertical or sloped outwards (laterally away from the through hole) when the surface is traced down. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An integrated circuit structure comprising:
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a body comprising a semiconductor substrate which has a first surface and a second surface, wherein one or more through holes pass through the substrate between the first and second surfaces, the body comprising one or more circuit elements formed in and/or over the first surface of the semiconductor substrate;
a conductor formed in each through hole and protruding from the bottom surface of the semiconductor substrate, the conductor in each through hole being coupled to one or more of the circuit elements;
a dielectric separating the conductor in each through hole from the semiconductor substrate, wherein at each through hole the dielectric forms a protrusion on the bottom of the body around the conductor;
wherein throughout each protrusion formed by the dielectric, the dielectric becomes gradually thinner around the adjacent conductor as the protrusion is traced down. - View Dependent Claims (9, 10)
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11. An integrated circuit fabrication method comprising:
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(a) forming one or more openings in a first generally horizontal surface of a semiconductor substrate;
(b) forming a first dielectric and a conductor in each of the one or more openings with the conductor in each of the openings being separated from the substrate by the first dielectric;
(c) removing material from a second generally horizontal surface of the substrate to expose the first dielectric and turn the one or more openings into through holes, and removing the exposed first dielectric to expose the conductor at the second surface of the substrate, such that the first dielectric forms a protrusion at each opening at the second surface, and the conductor protrudes from the first dielectric at each protrusion of the first dielectric;
wherein the protruding portion of each conductor has an outer surface not covered by the dielectric, and at least a portion of the outer surface is either vertical or is sloped outwards (laterally away from the through hole in which the conductor is formed) when the surface is traced in a direction away from the substrate. - View Dependent Claims (12, 13, 14, 15, 16, 17, 19, 20, 21, 22, 23, 24, 26, 27)
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18. An integrated circuit fabrication method comprising:
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forming one or more openings in a top surface of a semiconductor substrate, wherein each opening has a sidewall, and at least a first portion of the sidewall is either vertical or sloped outwards relative to the opening when the sidewall is traced down;
forming a first dielectric and a conductor in each opening with the conductor in each opening being separated from the substrate by the first dielectric;
removing material from a bottom surface of the substrate to expose the first dielectric and turn the one or more openings into through holes, and removing the exposed first dielectric to expose the conductor at the bottom surface of the substrate, such that the first dielectric forms a protrusion at each opening at the bottom surface, and the conductor protrudes from the first dielectric at each protrusion of the first dielectric;
wherein the removing operation (c) removes the semiconductor material from said first portion of the sidewall of each opening, and removes the dielectric adjacent to the first sidewall portion of the opening, to expose the conductor adjacent to the first sidewall portion of the opening.
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25. An integrated circuit fabrication method comprising:
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forming one or more openings in a first surface of a semiconductor substrate;
forming a dielectric and a conductor in each of the one or more openings with the conductor in each of the openings being separated from the substrate by the dielectric;
removing material from a second surface of the substrate to expose the dielectric and turn the one or more openings into through holes, and removing the exposed dielectric to expose the conductor at the second surface of the substrate, such that at each through hole the dielectric forms a protrusion around the conductor at the second surface;
wherein the removing operation comprises a simultaneous etch of the substrate and the first dielectric, such that the first dielectric is etched both vertically and horizontally.
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Specification